Page 1
PD - 91339A
IRF520N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 100V
DSS
R
DS(on)
= 0.20Ω
ID = 9.7A
S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
TO-220AB
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.8 A
I
DM
PD @TC = 25°C Power Dissipation 48 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 38
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 91 mJ
Avalanche Current 5.7 A
Repetitive Avalanche Energy 4.8 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 3.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
5/13/98
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IRF520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 2.7 ––– ––– S VDS = 50V, ID = 5.7A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 25 ID = 5.7A
Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 4.5 ––– VDD = 50V
Rise Time ––– 23 ––– ID = 5.7A
Turn-Off Delay Time ––– 32 ––– RG = 22Ω
ns
Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 330 –– – VGS = 0V
Output Capacitance ––– 92 ––– pF VDS = 25V
Reverse Transfer Capacitance –– – 54 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V
Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A
Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs
I
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 4.7mH
= 5.7A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
9.7
A
38
≤ 5.7A, di/dt ≤ 240A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
D
G
S
Page 3
IRF520N
)
A
)
A
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 2 5° C
1
0.1 1 10 100
V , Drain -to - S o ur c e Voltage (V
DS
C
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Drain -to -S o u r ce Vo ltage (V
DS
C
Fig 2. Typical Output Characteristics
3.0
I = 9 . 5A
D
T = 25°C
J
T = 175°C
10
D
I , Dra in-to -S o urc e C u rre nt (A )
1
45678910
V , Gate -to-S o urc e V oltage (V)
GS
J
V = 5 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(No rma li z e d )
1.0
0.5
DS (on)
R , D r a in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , J unc tion T emperatur e (°C )
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 1 0 V
GS
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IRF520N
)
A
)
A
A
)
A
g
600
500
400
300
200
C, Capacitance (pF)
100
0
1 10 100
V = 0V, f = 1M Hz
GS
C = C + C , C SHORTE D
is s gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
V , Drain -to - S ou r ce Voltage (V
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 5 . 7A
V , Gate- to-Sour c e V o lta ge (V)
16
12
8
4
GS
D
V = 80 V
DS
V = 50 V
DS
V = 20 V
DS
FOR TEST CIRCUIT
0
0 5 10 15 20 25
Q , T ota l G a te C h arge (nC
G
SE E F IG U RE 1 3
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
O PE RA TION IN TH IS A RE A L IMITE D
BY R
DS(on)
T = 175°C
J
10
T = 25 °C
J
SD
I , Re ve r se D r ain Curren t (A )
1
0.4 0.6 0.8 1.0 1.2 1.4
V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
10µs
10
100µs
1ms
1
D
I , Drain Current (A)
T = 25 °C
C
T = 17 5 °C
J
Sin
0.1
le Pu l se
1 10 100 1000
V , Drain -to -S o u r ce Vo ltage (V
DS
10ms
Fig 8. Maximum Safe Operating Area
Page 5
10.0
8.0
6.0
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRF520N
R
D
D.U.T.
+
V
DD
-
4.0
D
I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
thJC
1
0.20
0.10
0.05
P
1 2
DM
t
1
t
2
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRF520N
A
)
D.U.T .
I
AS
L
0.01Ω
+
V
DD
-
R
10 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
200
160
120
80
40
AS
V = 25 V
E , S ing le Puls e Avalan c h e E ne rg y ( mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C
J
I
TOP 2.3A
4.0A
BOTTO M 5.7A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
D
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
Fig 13b. Gate Charge Test Circuit
+
V
DS
-
D
Page 7
IRF520N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Diode Recovery
dv/dt
Fig 14. For N-Channel HEXFETS
di/dt
V
DD
I
SD
Page 8
IRF520N
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
M IN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GA T E
2 - DR A IN
3 - SO U RCE
4 - DR A IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM EN S IO NIN G & T O L E RA NC IN G PE R A NS I Y1 4.5 M , 19 82. 3 OU T L IN E C ON FO R M S T O JE DE C O U TL IN E T O -2 2 0 -A B .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEM BL Y
LO T CO DE 9 B1 M
0.93 (.037)
3X
0.69 (.027)
0.36 (.01 4) M B A M
INTERNATIONAL
RE CT IF IER
LO GO
ASSEMBLY
LO T C ODE
IRF1010
9246
9B 1 M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
PART NUMBER
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
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