Page 1
IRF520
IRF520FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
IRF 520
IRF 520FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
o
■ 175
C OPERATING TEMPERATURE
DS(on)
DSS
100 V
100 V
= 0.23 Ω
R
DS(on)
<0.27Ω
<0.27Ω
I
D
10 A
7A
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramete r Val u e Unit
IRF 52 0 IRF520FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
June 1993
Drain - s ource Voltage (VGS=0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ)100V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (cont.) at Tc=25oC107A
D
Drain Current (cont.) at Tc=100oC75A
I
D
(•) Drain Current (pulsed) 40 40 A
Total Di ssipation at Tc=25oC7035W
tot
Derat ing Factor 0.47 0.23 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
1/9
Page 2
IRF520/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-s
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max 2.14 4.29
Thermal Resistance Junction- ambient M ax
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
62.5
0.5
300
10 A
36 mJ
9mJ
7A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 100 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
250
1000µAµA
VGS= ± 20 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n
VGS=10V ID=5A 0.23 0.27 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)maxVGS
=10V 10 A
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=5A 2.7 4.5 S
VDS=25V f=1MHz VGS=0 330
90
25
450
120
40
pF
pF
pF
2/9
Page 3
IRF520/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
t
d(off)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Tur n - of f Delay Time
Fall Time
t
f
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For w ar d On Voltage ISD=10A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
Charge
VDD=50V ID=5A
RGS=4.7 Ω VGS=10V
(see test circ uit)
ID=10A VGS=10V
VDD= Max Rating x 0.8
(see test circ uit)
ISD=10A di/dt=100A/µs
VDD=20V Tj=150oC
10
50
25
20
15
7
4
80
0.22
15
75
40
30
25 nC
10
40
ns
ns
ns
ns
nC
nC
A
A
ns
µC
Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220
3/9
Page 4
IRF520/FI
Thermal Impedance for TO-220
Derating Curve for TO-220
Thermal Impedance for ISOWATT220
Derating Curve for ISOWATT220
Output Characteristics
4/9
Transfer Characteristics
Page 5
Transconductance Static Drain-source On Resistance
Maximum Drain Current vs Temperature Gate Charge vs Gate-source Voltage
IRF520/FI
Normalized Breakdown Voltage vs TemperatureCapacitance Variations
5/9
Page 6
IRF520/FI
Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms
Switching Time Test Circuit Gate Charge Test Circuit
6/9
Page 7
TO-220 MECHANICAL DATA
IRF520/FI
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
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Page 8
IRF520/FI
ISOWATT220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
Ø
F1
H
L2
F2
F
123
L4
G1
G
P011G
8/9
Page 9
IRF520/FI
Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSONMicroelectronics - All Rights Reserved
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Singapore -Spain - Sweden- Switzerland -Taiwan - Thailand - United Kingdom -U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
9/9
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