Page 1
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRF510, SiHF510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
R
()V
DS(on)
(Max.) (nC) 8.3
Q
g
(nC) 2.3
Q
gs
(nC) 3.8
Q
gd
Configuration Single
= 10 V 0.54
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRF510PbF
SiHF510-E3
IRF510
SiHF510
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 4.0
C
DS
± 20
GS
I
D
IDM 20
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
DD
c. I
5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91015 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
100
5.6
100 mJ
5.6 A
4.3 mJ
43 W
- 55 to + 175
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
Page 2
IRF510, SiHF510
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-3.5
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-81-
oss
-15-
rss
g
--2.3
gs
--3.8
gd
d(on)
r
-15-
d(off)
-9.4-
f
D
Between lead,
6 mm (0.25") from
package and center of
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 100 - -
VDS = VGS, ID = 250 μA 2.0 -
= ± 20 V - -
GS
VDS = 100 V, VGS = 0 V - -
= 80 V, VGS = 0 V, TJ = 150 °C - -
V
DS
= 10 V ID =3.4 A
GS
VDS = 50 V, ID = 3.4 A
VGS = 0 V,
= 25 V,
V
DS
b
b
--
1.3 - -
- 180 -
4.0 V
± 100 nA
25
250
0.54
f = 1.0 MHz, see fig. 5
--8.3
b
V
GS
= 10 V
I
= 5.6 A, VDS = 80 V
D
= 10 V,
V
DS
see fig. 6 and 13
-6.9-
= 50 V, ID = 5.6 A
V
DD
R
= 24 , RD = 8.4, see fig. 10
g
b
-16-
-4.5-
-7.5-
--5.6
--20
TJ = 25 °C, IS = 5.6 A, VGS = 0 V
b
--
-
b
-
2.5 V
100 200 ns
0.44 0.88 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V
V/°C
μA
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91015
2 S11-0511-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 3
91015_01
20 µs Pulse Width
T
C
= 25 °C
4.5 V
VDS, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
1
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
0
10
-1
10
0
10
1
IRF510, SiHF510
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
, Drain Current (A)
D
I
91015_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Vishay Siliconix
1
10
0
10
-1
10
56789104
V
GS
Fig. 3 - Typical Transfer Characteristics
25 °C
175 °C
20 µs Pulse Width
V
DS
Gate-to-Source Voltage (V)
,
= 50 V
V
1
10
To p
15 V
GS
10 V
8.0 V
7.0 V
6.0 V
3.0
2.5
2.0
I
D
V
GS
= 5.6 A
= 10 V
5.5 V
Bottom
-1
5.0 V
4.5 V
0
10
V
Drain-to-Source Voltage (V)
,
DS
0
10
, Drain Current (A)
D
I
10
91015_02
Fig. 2 - Typical Output Characteristics, T
4.5 V
20 µs Pulse Width
= 175 °C
T
C
1
10
= 175 °C
C
1.5
(Normalized)
1.0
, Drain-to-Source On Resistance
0.5
DS(on)
0.0
R
- 60 - 40- 20 0 20 40 60 80 100 120140160
T
Junction Temperature (°C)
91015_04
,
J
Fig. 4 - Normalized On-Resistance vs. Temperature
180
Document Number: 91015 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 4
IRF510, SiHF510
400
320
240
160
0
80
10
0
10
1
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
C
iss
C
rss
C
oss
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
91015_05
20
16
12
8
0
4
02 864
ID = 5.6 A
V
DS
= 20 V
For test circuit
see figure 13
10
V
DS
= 50 V
V
DS
= 80 V
QG, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
91015_06
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91015_07
175 °C
0
10
, Reverse Drain Current (A)
-1
10
SD
I
25 °C
V
= 0 V
GS
0.5 0.90.80.70.6 1.0 1.21.1
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2
10
5
2
10
5
2
1
, Drain Current (A)
D
5
I
2
0.1
91015_08
Operation in this area limited
by R
DS(on)
100 µs
1 ms
10 ms
TC = 25 °C
= 175 °C
T
J
1
25
Single Pulse
25
10
2
10
25
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
3
10
www.vishay.com Document Number: 91015
4 S11-0511-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 5
I
D
, Drain Current (A)
TC, Case Temperature (°C)
1.0
2.0
3.0
4.0
5.0
6.0
25 1501251007550
91015_09
0.0
175
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t1, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1/t2
2. Peak Tj = PDM x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0 - 0.5
0.2
0.1
0.05
0.02
0.01
91015_11
IRF510, SiHF510
Fig. 9 - Maximum Drain Current vs. Case Temperature
V
DS
V
GS
R
G
Vishay Siliconix
R
D
D.U.T.
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91015 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 5
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Page 6
IRF510, SiHF510
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Vishay Siliconix
V
R
10 V
DS
G
Var y tp to obtain
required I
AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
L
t
p
D.U.T
I
AS
t
p
0.01 Ω
300
250
200
150
+
V
DD
-
V
DS
A
I
AS
I
To p
Bottom
D
2.3 A
4.0 A
5.6 A
V
DS
V
DD
10 V
V
100
, Single Pulse Energy (mJ)
50
AS
E
91015_12c
VDD = 25 V
0
25 1501251007550
Starting TJ, Junction Temperature (°C)
175
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Q
G
Q
GS
G
Q
GD
Charge
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91015
6 S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Page 7
IRF510, SiHF510
+
-
R
D.U.T.
g
Peak Diode Recovery dV/dt Test Circuit
+
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
• dV/dt controlled by R
• Driver same type as D.U.T.
I
controlled by duty factor “D”
•
SD
• D.U.T. - device under test
g
+
Vishay Siliconix
+
V
DD
-
Reverse
recovery
current
Re-applied
voltage
Driver gate drive
P.W.
D.U.T. l
D.U.T. V
Inductor current
Note
a. V
waveform
SD
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
Period
Body diode forward
current
dI/dt
Diode recovery
dV/dt
Fig. 14 - For N-Channel
D =
Period
P.W.
V
GS
V
DD
I
SD
= 10 Va
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91015
.
Document Number: 91015 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Page 8
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.14 4.70 0.163 0.185
b 0.69 1.02 0.027 0.040
b(1) 1.14 1.73 0.045 0.068
c 0.36 0.61 0.014 0.024
D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 0.43 1.40 0.017 0.055
H(1) 6.10 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1) 3.33 4.04 0.131 0.159
Ø P 3.53 3.94 0.139 0.155
Q 2.59 3.00 0.102 0.118
ECN: X15-0003-Rev. A, 19-Jan-15
DWG: 6031
Notes
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
• Outline conforms to JEDEC
of dimension F
®
outline TO-220AB with exception
Revison: 19-Jan-15
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 66542
Page 9
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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