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PD - 94816
IRF4905PbF
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
G
HEXFET® Power MOSFET
D
V
= -55V
DSS
R
S
= 0.02Ω
DS(on)
ID = -74A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
TO-220AB
thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -74
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -52 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -260
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 930 mJ
Avalanche Current -38 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
11/6/03
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IRF4905PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.02 Ω VGS = -10V, ID = -38A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 21 ––– ––– S VDS = -25V, ID = -38A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 180 ID = -38A
Gate-to-Source Charge ––– ––– 32 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 86 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 18 ––– VDD = -28V
Rise Time ––– 99 – –– ID = -38A
Turn-Off Delay Time ––– 61 ––– RG = 2.5Ω
ns
Fall Time ––– 96 –– – RD = 0.72Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3400 ––– VGS = 0V
Output Capacitance ––– 1400 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V
Reverse Recovery Time ––– 89 130 ns TJ = 25°C, IF = -38A
Reverse Recovery Charge ––– 230 350 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ -38A, di/dt ≤ -270A/µs, V
SD
TJ ≤ 175°C
= 25°C, L = 1.3mH
J
= -38A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-74
-260
showing the
A
p-n junction diode.
DD
≤ V
(BR)DSS
D
G
S
,
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IRF4905PbF
A
A
A
A
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
100
10
D
-I , Drain-to-Source Current (A)
-4.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
c
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
100
10
D
-I , Drain-to-Source Current (A)
-4.5V
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics
2.0
I = -64A
D
T = 25°C
100
10
D
-I , Drain-to-Source Current (A)
1
45678910
-V , Gate-to-Source Voltage (V)
GS
J
T = 175°C
J
V = -25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = -10V
GS
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IRF4905PbF
A
A
A
A
7000
6000
5000
4000
3000
C, Capacitance (pF)
2000
1000
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = -38A
D
V = -44V
16
12
GS
8
4
DS
V = -28V
DS
-V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
10
SD
-I , Reverse Drain Current (A)
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V , Source-to-Drain Voltage (V)
SD
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10
D
-I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100µs
1ms
10ms
Page 5
IRF4905PbF
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
D.U.T.
D
-
+
V
DS
V
GS
R
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
D = 0.50
thJC
0.20
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
Thermal Response (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRF4905PbF
(BR)
A
A
L
D.U.T
I
AS
0.01
t
p
DRIVER
Ω
15V
V
DD
R
V
G
-20V
DS
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
DSS
2500
I
TOP -16A
-27A
2000
1500
1000
500
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
BOTTOM -38A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
Fig 12b. Unclamped Inductive Waveforms
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Fig 13b. Gate Charge Test Circuit
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IRF4905PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P. W .
Period
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
di/dt
Diode Recovery
dv/dt
Fig 14. For P-Channel HEXFETS
V
DD
[ ]
I
[ ]
SD
Page 8
IRF4905PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (. 113)
2.62 (. 103)
15.24 (.600)
14.84 (.584)
14.09 (. 555)
13.47 (. 530)
10.54 (.415)
10.29 (.405)
1 2 3
3.78 (.1 49)
3.54 (.1 39)
- A -
6.47 (.255)
6.10 (.240)
4
1.15 (.0 45)
MIN
4.06 ( .160)
3.55 ( .140)
4.69 (.1 85)
4.20 (.1 65)
- B -
1.32 (.052)
1.22 (.048)
HEXFET
1- GATE
2- DRAIN
3- S OURCE
4- DRAIN
LEAD ASSI GNMENTS
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RCE
4 - DRA IN
IGBTs, C oPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
0.93 (. 037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.1 00)
NOTES:
1 DIMENSION ING & TOLER ANC ING PER AN SI Y14.5M, 19 82. 3 OUTLIN E CONFO RMS TO JEDE C OUTLINE T O-22 0AB .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
0.69 (. 027)
0.36 (.014 ) M B A M
0.55 (. 022)
3X
0.46 (. 018)
2.92 (. 115)
2.64 (. 104)
TO-220AB Part Marking Information
EXAMPLE:
THIS IS AN IRF1010
LOT CODE 1789
ASSEMB LED O N WW 19 , 1997
IN THE ASSEM BLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INTER NATION AL
RECTIFIER
LOGO
ASSEMBLY
LOT C ODE
Data and specifications subject to change without notice.
PART NUM BER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
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