Page 1
PD - 9.1280C
TO-220AB
IRF4905
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -74
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -52 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -260
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 930 mJ
Avalanche Current -38 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
D
V
= -55V
DSS
R
S
= 0.02Ω
DS(on)
ID = -74A
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
8/25/97
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IRF4905
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.05 –– – V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance – –– ––– 0.02 Ω VGS = -10V, ID = -38A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 21 – –– ––– S VDS = -25V, ID = -38A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 1 00 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -55V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 180 ID = -38A
Gate-to-Source Charge ––– –– – 32 nC VDS = -44V
Gate-to-Drain ("Miller") Charge ––– ––– 86 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 18 ––– VDD = -28V
Rise Time ––– 99 ––– ID = -38A
Turn-Off Delay Time ––– 61 ––– RG = 2.5Ω
ns
Fall Time ––– 96 ––– RD = 0.72Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
4.5
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3400 ––– VGS = 0V
Output Capacitance ––– 1400 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 64 0 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -38A, VGS = 0V
Reverse Recovery Time ––– 89 130 ns TJ = 25°C, IF = -38A
Reverse RecoveryCharge ––– 230 350 µC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25°C, L = 1.3mH
J
= -38A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-74
-260
showing the
A
p-n junction diode.
≤ -38A, di/dt ≤ -270A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
Page 3
IRF4905
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BO T T OM - 4. 5V
100
10
D
-I , Drain-to-S ource C urrent (A)
-4.5V
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
-V , Drain -to -S o urc e V o ltag e ( V)
DS
c
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BO T T OM - 4. 5V
100
10
D
-I , Drain-to-Source Current (A )
-4.5V
20µs PULSE WIDTH
T = 175°C
A
1
0.1 1 10 100
-V , Drain-to-So urc e V oltag e (V )
DS
C
A
Fig 2. Typical Output Characteristics
2.0
I = -64A
D
T = 25°C
100
10
D
-I , Dr a in-to - So u r c e C ur r e n t ( A)
1
45678910
-V , G ate -to -Sou rc e Vo l ta g e (V)
GS
J
T = 175°C
J
V = -2 5 V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm a lized)
0.5
DS(on)
R , D rain -to-S ou rc e O n R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Ju nc tion Temperat ure ( °C )
J
V = -10V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
Page 4
IRF4905
7000
6000
5000
4000
3000
C, C apac itance (pF)
2000
1000
0
1 10 100
V = 0V , f = 1 M Hz
GS
C = C + C , C SHORTE D
iss gs gd ds
C = C
rss gd
C = C + C
oss ds g d
C
iss
C
oss
C
rs s
-V , Drain -to-So urc e V oltag e (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = -38A
D
V = - 4 4 V
16
12
8
4
GS
DS
V = - 2 8 V
DS
-V , Ga te-to- So u rce V oltag e (V )
FOR TEST CIRCUIT
A
0
0 40 80 120 160 200
Q , Total G ate C ha rge (n C )
G
SEE FIGURE 13
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
O PERATION IN THIS A REA L IMITED
BY R
DS(on)
100
T = 175°C
J
T = 25°C
J
10
SD
-I , R everse D rain Current (A )
V = 0V
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-V , Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
100µs
1ms
10
D
-I , Dra in C u rren t (A)
T = 25° C
C
T = 175 ° C
J
A
Sin gle Pulse
1
1 10 100
-V , Drain-to-So urc e V olta ge (V )
DS
10ms
A
Fig 8. Maximum Safe Operating Area
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IRF4905
+
-
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
D
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
GS
10%
90%
V
DS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
V
DD
D = 0.50
thJC
0.20
0.1
0.10
P
1 2
DM
t
1
t
2
0.05
Thermal Response (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
Notes:
J DM thJC C
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IRF4905
L
D.U.T
I
AS
0.01
p
DRIVER
Ω
15V
V
DD
R
-20V
V
DS
G
t
Fig 12a. Unclamped Inductive Test Circuit
I
AS
t
p
V
(BR)DSS
2500
I
D
TO P - 16A
-27 A
2000
A
1500
1000
500
AS
E , S in gle Pulse A valanche Energ y (m J)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
BO TTOM -38A
A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Q
G
-10V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T .
-3mA
I
G
Current Sampling Resistors
V
DS
+
I
D
Fig 13b. Gate Charge Test Circuit
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IRF4905
+
-
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V
DD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
VGS=10V
[ ] ***
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For P-Channel HEXFETS
di/dt
Diode Recovery
dv/dt
V
DD
[ ]
I
[ ]
SD
Page 8
IRF4905
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.41 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y14 .5M , 198 2. 3 OU T L INE C O N F O R M S T O J E D E C OU T LINE TO -2 20 A B.
2 CO NTR OLLING DIME NSION : INCH 4 HEATSINK & LEAD MEAS UREMENTS D O NO T INCL UDE BURRS .
1 0.29 (.40 5)
4
1 2 3
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
W ITH ASSEMBLY
LOT C O D E 9 B1 M
LOT C O D E 9 B1 M
3.78 (.149)
3.54 (.139)
- A -
6.4 7 (.255)
6.1 0 (.240)
1.15 (.0 4 5)
MIN
4.0 6 (.160)
3.5 5 (.140)
0.93 (.037)
3X
0.69 (.027)
0 .3 6 (.01 4) M B A M
INTERNATIONAL
INTERNATIONAL
R ECT IF IER
R ECT IF IER
LOG O
LOG O
ASSEMBLY
ASSEMBLY
LOT C O D E
LOT C O D E
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
IRF1010
IRF1010
9246
9B 1 M
9B 1 M
LEAD ASSIGNMENTS
1 - G A TE
2 - DR A IN
3 - SOURCE
4 - DR A IN
0.5 5 (.022)
3X
0.4 6 (.018)
9246
PART NUMBER
PART NUMBER
DATE CODE
DATE CODE
(YYWW)
(YYWW)
YY = YEAR
YY = YEAR
WW = WEEK
WW = WEEK
A
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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