Datasheet IRF453, IRF452, IRF451, IRF450 Datasheet (Fairchild Semiconductor)

IRF450

Data Sheet March 1999

13A, 500V, 0.400 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17435.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF450 TO-204AA IRF450

NOTE: When ordering, include the entire part number.

File Number

Features

• 13A, 500V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.400Ω

Components to PC Boards”

Symbol

D

G

1827.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

S

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF450

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF450 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

500 V
500 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 13 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
DM
GS

D

8.1 A
52 A

±20 V

125 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

860 mJ

-55 to 150

300

260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Gate to Source Leakage I
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I
Drain to Source On Resistance (Note 2) r

D(ON)

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

GSS
DSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC
θJA

= 0V, ID = 250µA (Figure 10) 500 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VGS = ±20V - - ±100 nA
VDS = Rated BV
VDS= 0.8 x Rated BV
VDS>I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - 25 µA

DSS

DSS,VGS

= 0V, TJ= 125oC - - 250 µA

= 10V (Figure 7) 13 - - A

= 10V, ID = 7.2A (Figures 8, 9) - 0.3 0.400 Ω
VDS≥ 50V, ID = 7.2A (Figure 12) 6.0 11 - S
VDD= 250V, ID≈ 13A, RG = 6.2Ω, RL = 19Ω

(Figures 17, 18) MOSFET SwitchingTimes are
Essentially Independent of Operating
Temperature

-2027ns

-4066ns

- 72 100 ns

-3560ns

= 10V, ID= 13A, VDS= 0.8 x Rated BV

I

= 1.5mA(Figures14, 19, 20) Gate Charge

g(REF)

is Essentially Independent of Operating
Temperature

DSS

,

- 85 130 nC

-12- nC

-42- nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1800 - pF

- 400 - pF

- 100 - pF

Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die

Measured from the
Source Lead, 6mm
(0.25in)fromthe Flange
to Source Bonding Pad

Free Air Operation - - 30

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.83

o

C/W

o

C/W

2

IRF450

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 9.2mH, RG = 25Ω, peak IAS = 13A. See Figures 14, 15.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 13 A

- - 52 A

Junction Diode

G

S

TJ = 25oC, ISD= 13A, VGS = 0V (Figure 13) - - 1.4 V

SD

TJ = 25oC, ISD = 13A, dISD/dt = 100A/µs 280 600 1200 ns

rr

TJ = 25oC, ISD = 13A, dISD/dt = 100A/µs 3.2 7.5 14 µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

C/W)

1

o

0.5

0.2

0.1

0.001

THERMAL IMPEDANCE (

0.0001

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

, TRANSIENT

θJC

Z

15

12

9

6

DRAIN CURRENT (A)

D,

I

3

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

= PDM x Z

2

θJC

2

+ T

NOTES:
DUTY FACTOR: D = t1/t
PEAK T

J

0.1 1 10

C

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3

IRF450

Typical Performance Curves

3

10

OPERATION IN THIS
REGION IS LIMITED
BY r

2

10

10

, DRAIN CURRENT (A)

D

1

I

= 25oC

T

C

TJ = MAX RATED
SINGLE PULSE

0.1
110

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

Unless Otherwise Specified (Continued)

20

16

10µs

100µs

1ms

10ms

DC

2

10

3

10

12

8

, DRAIN CURRENT (A)

D

I

4

0

VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V
VGS = 4.0V

50 100 150 2000 250

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

20

80µs PULSE TEST

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

36912015
VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

VGS = 6.0V

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V
VGS = 4.0V

2

10

10

, DRAIN CURRENT (A)

0.1

D

I

10

≥ 50V

V

DS

5

80µs PULSE TEST

2

5
2

1
5

TJ = 150oC

2

5
2

-2

0246810

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

80µs PULSE TEST

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

2.0

80µs PULSE TEST

1.6

1.2

0.8

0.4

DRAIN TO SOURCE ON RESISTANCE

0

060

12 24

ID, DRAIN CURRENT (A)

VGS = 10V

36

VGS = 20V

48

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

3.0
ID = 13A

VGS = 10V

2.4

1.8

1.2

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0

0 60 120 160

-20-40 20 40 100 140
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4

80-60

IRF450

Typical Performance Curves

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

-20 20 100 160

0-40 40 80 120 140

T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

60-60

FIGURE 10. NORMALIZED DRAINTOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

20

V

≥ 50V

DS

80µs PULSE TEST

16

12

8

, TRANSCONDUCTANCE (S)

4

fs

g

0

4 8 12 16020

ID, DRAIN CURRENT (A)

TJ = 25oC

TJ = 150oC

10000

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

8000

C

≈ CDS + C

OSS

6000

4000

C, CAPACITANCE (pF)

2000

0

0 2 10 2 5 10

GD

GD

GD

C

ISS

C

OSS

C

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

5

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

2

10

5

2

10

5

TJ = 150oC
2
1

5

, SOURCE TO DRAIN CURRENT (A)

2

SD

I

0.1
0 0.5 1.0 1.5 2.0 2.5

VSD, SOURCE TO DRAIN VOLTAGE (V)

TJ = 25oC

2

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

20

ID = 13A
FOR TEST CIRCUIT, SEE FIGURE 18

16

12

8

4

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

25 50 75 1000 125

Q

g(TOT)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

VDS = 100V

VDS = 250V

V

= 400V

DS

, TOTAL GATE CHARGE (nC)

IRF450

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

DUT

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

12V

BATTERY

0

0.2µF

I

g(REF)

CURRENT

REGULATOR

50kΩ

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

6

IRF450

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