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PD- 94243
IRF4435
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
Description
S
S
S
1
2
3
4
Top View
A
8
D
V
= -30V
R
DS(on)
DSS
= 0.020Ω
7
D
6
D
5
DG
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -6.4 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Drain- Source Voltage -30 V
Pulsed Drain Current -50
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
W
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
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IRF4435
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.019 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 0.015 0.020 VGS = -10V, ID = -8.0A
––– 0.026 0.035 VGS = -4.5V, ID = -5.0A
Ω
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance ––– 11 ––– S VDS = -15V, ID = -8.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -10 VDS = -24V, VGS = 0V
––– ––– -10 VDS = -15V, VGS = 0V, TJ = 70°C
µA
nA
Total Gate Charge ––– 40 60 ID = -4.6A
Gate-to-Source Charge ––– 7.1 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 8.0 ––– VGS = -10V
Turn-On Delay Time ––– 16 24 VDD = -15V, VGS = -10V
Rise Time ––– 76 110 ID = -1.0A
Turn-Off Delay Time ––– 130 200 RG = 6.0Ω
ns
Fall Time ––– 90 140 RD = 15Ω
Input Capacitance ––– 2320 ––– VGS = 0V
Output Capacitance –– – 390 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
-2.5
-50
A
G
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
Reverse Recovery Time ––– 34 51 n s TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 33 50 nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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D
S
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IRF4435
1000
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM
-2.7V
-2.70V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
T = 150 C
J
1000
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM
-2.7V
-2.70V
20µs PULSE WIDTH
-V , Drain-to-Source Voltage (V)
DS
°
T = 150 C
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
°
1.5
-8.0A
I =
D
10
D
-I , Drain-to-Source Current (A)
V = -15V
DS
1
2.0 3.0 4.0 5.0 6.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
-10V
GS
°
Vs. Temperature
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IRF4435
3500
3000
2500
2000
1500
C, Capacitance (pF)
1000
500
0
1 10 100
V
=
0V,
iss
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
C
C
oss
C
rss
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
-4.6A
D
V =-15V
DS
16
12
8
4
GS
-V , Gate-to-Source Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
1
SD
-I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4
°
T = 150 C
J
°
T = 25 C
J
-V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
100
10
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
A
T T= 150 C
Single Pulse
1
0.1 1 10 100
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
Forward Voltage
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IRF4435
8.0
6.0
4.0
D
-I , Drain Current (A)
2.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
0.20
0.10
0.00
Id = -250µA
-0.10
, Variace ( V )
-0.20
GS(th)
-V
-0.30
-0.40
-50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Typical Vgs(th) Variance Vs.
Juction Temperature
D = 0.50
0.20
10
thJA
Thermal Response (Z )
0.01
0.10
0.05
0.02
1
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
P
DM
t
1 2
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF4435
0.10
)
Ω
0.08
0.06
0.04
, Drain-to -Source Voltage (
0.02
DS(on)
R
0.00
2 4 6 8 10 12 14 16
-V
Gate -to -Source Voltage ( V )
GS,
Id = -8.0A
Fig 12. Typical On-Resistance Vs.
Gate Voltage
)
0.10
Ω
0.08
0.06
VGS= - 4.5V
0.04
0.02
( on) , Drain-to-Source On Resistance (
DS
0.00
R
0 10 20 30 40
VGS = -10V
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
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SO-8 Package Details
D
5
- B -
8 7 6 5
5
E
- A 1 2 3 4
e
6X
- C -
0.25 (.010) M C A S B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
5
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
B 8X
e1
A1
H
0.25 (.010) M A M
A
0.10 (.004)
K x 45°
θ
6
L
8X
C
8X
IRF4435
INCHES MILLIMETERS
DIM
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
0° 8° 0° 8°
θ
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
6.46 ( .255 )
1.27 ( .050 )
3X
1.78 (.070)
8X
SO-8 Part Marking
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IRF4435
SO-8 Tape and Reel
TER M INAL N U M B ER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).
3. OUT LINE CONFO RMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONT ROLLING DIMENSION : M ILLIMETER.
2. OU TL INE CO N FO R M S TO EIA-481 & EIA-541.
FEED DIREC TION
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
14.40 ( .566 )
12.40 ( .488 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
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