Datasheet IRF423, IRF421, IRF420, IRF422 Datasheet (Intersil)

July 1998

Semiconductor

IRF420, IRF421,

IRF422, IRF423

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs

Features

• 2.2A and 2.5A, 450V and 500V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3.0Ω and 4.0Ω

DS(ON)

Components to PC Boards”

Ordering Information

P AR T NUMBER P ACKAGE BRAND

IRF420 TO-204AA IRF420
IRF421 TO-204AA IRF421
IRF422 TO-204AA IRF422
IRF423 TO-204AA IRF423

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA17405.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1571.3

IRF420, IRF421, IRF422, IRF423

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

C

IRF420 IRF421 IRF422 IRF423 UNITS

Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

500 450 500 450 V
500 450 500 450 V

2.5

1.6

2.5

1.6

2.2

1.4

2.2

1.4

10 10 8 8 A

±20 ±20 ±20 ±20 V

50 50 50 50 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . .TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

Package Body for 10s, See TB334. . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

210 210 210 210 mJ

-55 to 150 -55 to 150 -55 to 150 -55 to 150

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V, (Figure 10)

IRF420, IRF422 500 - - V

IRF421, IRF423 450 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V,

DSS

- - 250 µA

TJ= 125oC

On-State Drain Current (Note 2) I

D(ON)VDS

IRF420, IRF421 2.5 - - A

> I
(Figure 7)

D(ON)

x r

DS(ON)MAX

, VGS = 10V

IRF422, IRF423 2.2 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

GSS

VGS = ±20V - - ±100 nA

= 1.4A, VGS = 10V, (Figures 8, 9)

IRF420, IRF421 - 2.5 3.0 Ω

IRF422, IRF423 - 3.0 4.0 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

VDS≥ 10V, ID = 2.0A, (Figure 12) 1.5 2.3 - S

fs

= 250V, ID≈ 2.5A, RG = 18Ω, RL = 96Ω,

-1015ns

VGS = 10V, (Figures 17, 18) MOSFET Switching

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

Times are Essentially Independent of Operating

r

Temperature

f

= 10V, ID≈ 2.5A, VDS = 0.8 x Rated BV

I

= 1.5mA, (Figures 14, 19, 20)

G(REF)

DSS,

-1218ns

-2842ns

-1218ns

-1119nC

Gate Charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Operating Temperature

gs

gd

-5-nC

-6-nC

5-2

IRF420, IRF421, IRF422, IRF423

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 300 - pF

ISS

OSS

RSS

Measured between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.

Measured from the

S

Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.

θJC

Free Air Operation - - 30

θJA

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.

D

L

D

G

L

S

S

-75- pF

-20- pF

- 5.0 - nH

- 12.5 - nH

- - 2.5oC/W

o

C/W

Continuous Source to Drain Current I

SD

Modified MOSFET

D

- - 2.5 A

Symbol Showing the

Pulse Source to Drain Current

I

(Note 3)

Source to Drain Diode Voltage (Note 2) V

Reverse Recovery Time t

Reverse Recovered Charge Q

SDM

Integral Reverse P-N
Junction Diode

TJ = 25oC, ISD = 2.5A, VGS = 0V, (Figure 13) - - 1.4 V

SD

TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 130 270 540 ns

rr

TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 0.57 1.2 2.3 µC

RR

G

S

- - 10 A

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25Ω, peak IAS = 2.5A, Figures 15, 16.

5-3

IRF420, IRF421, IRF422, IRF423

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

TC = 25oC Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

10

0.5

1

0.2

0.1

, TRANSIENT

JC

Z

θ

0.1

THERMAL IMPEDANCE

0.01
10

0.05

0.02

0.01
SINGLE PULSE

-5

-4

10

-3

10

, RECTANGULAR PULSE DURATION (s)

t

1

2.5

2.0
IRF420, IRF421

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

50 75 100 15025

IRF422, IRF423

125

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

TJ = PDM x Z

-2

10

0.1 1 10

θJC

+ T

C

1/t2

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

IRF420/1

10

IRF422/3
IRF420/1

IRF422/3

1

, DRAIN CURRENT (A)

D

I

TC = 25oC
T

J

SINGLE PULSE

0.1
110

OPERATION IN THIS
AREA IS LIMITED
BY r

DS(ON)

= MAX RATED

VDS, DRAIN TO SOURCE VOLTAGE (V)

IRF420/2

IRF421/3

10

5

VGS = 10V

10µs

100µs

1ms

10ms

DC

2

3

10

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

50 100 150 2000 250

VDS, DRAIN TO SOURCE VOLTAGE (V)

80µs PULSE TEST

VGS = 4V

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

5-4

VGS = 6V

VGS = 5.5V

VGS = 5V

VGS = 4.5V

IRF420, IRF421, IRF422, IRF423

Typical Performance Curves

5

80µs PULSE TEST

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

4 8 12 16020

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC Unless Otherwise Specified (Continued)

VGS = 4V

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

10

80µs PULSE TEST

8

6

VGS = 10V

VGS = 6V

VGS = 5.5V

VGS = 5V

VGS = 4.5V

10

VDS ≥ 50V
80µs PULSE TEST

T

= 150oC

J

1

0.1

, DRAIN CURRENT (A)

D

I

0.01
0246810

VGS, GATE TO SOURCE VOLTAGE (V)

3.0
ID = 2.5A

VGS = 10V

2.4

1.8

TJ = 25oC

4

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

2

DS(ON)

r

0

VGS = 10V

VGS = 20V

2468010

I

, DRAIN CURRENT (A)

D

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.25
ID = 250µA

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75

0 60 160-60 -40 -20 20 40 80 100 140120

TJ, JUNCTION TEMPERATURE (oC)

1.2

0.6

NORMALIZED ON RESISTANCE

0

-40 -20 20 40 80 100 140120

0 60 160-60

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION

TEMPERATURE

1000

VGS = 0V, f = 1MHz

= CGS + C

C
C

800

C

600

400

C, CAPACITANCE (pF)

200

0

1

ISS
RSS

OSS

C

RSS

= C

≈ C

GD

GD

+ C

DS

GS

C

ISS

C

OSS

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

2

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

5-5

IRF420, IRF421, IRF422, IRF423

Typical Performance Curves

4.0

PULSE DURATION = 80µs

3.2

2.4

1.6

, TRANSCONDUCTANCE (S)

0.8

fs

g

0

0 4.0

0.8 1.6 2.4

TJ = 150oC

ID, DRAIN CURRENT (A)

TC = 25oC Unless Otherwise Specified (Continued)

10

PULSE DURATION = 80µs

TJ = 25oC

TJ = 150oC

1

, SOURCE TO DRAIN CURRENT (A)

SD

I

3.2

0.1
0 0.4 0.8 1.2 1.6 2.0

TJ = 25oC

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 2.5A

16

VDS = 400V
VDS = 250V

= 100V

V

DS

12

8

4

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

020

48

Q

, TOTAL GATE CHARGE (nC)

g(TOT)

12 16

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5-6

IRF420, IRF421, IRF422, IRF423

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

12V

BATTERY

0.2µF

50kΩ

CURRENT

REGULATOR

0.3µF

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

D

V

DS

G

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

DUT

S

CURRENT

I

D

SAMPLING

0

V

DS

I

G(REF)

0

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

5-7