Datasheet IRF3711S, IRF3711, IRF3711L Datasheet (International Rectifier)

SMPS MOSFET

PD- 94062B

IRF3711

IRF3711S

IRF3711L

Applications

 High Frequency Isolated DC-DC

Converters with Synchronous Rectification
for Telecom and Industrial Use

 High Frequency Buck Converters for

V

DSS

20V 6.0mΩ 110A

HEXFET® Power MOSFET

R

DS(on)

max I

D

Server Processor Power Synchronous FET

 Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

Benefits

 Ultra-Low Gate Impedance
 Very Low RDS(on) at 4.5V V
 Fully Characterized Avalanche Voltage

GS

TO-220AB

IRF3711

D2Pak

IRF3711S

TO-262

IRF3711L

and Current

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 69 A
I

DM

PD @TC = 25°C Maximum Power Dissipation 120 W
PD @TA = 25°C Maximum Power Dissipation 3.1 W

Linear Derating Factor 0.96 W/°C

TJ , T

STG

Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 20 V

Pulsed Drain Current 440

Junction and Storage Temperature Range -55 to + 150 °C



Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case ––– 1.04
Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40

Notes  through  are on page 11

www.irf.com 1

11/15/01

IRF3711/3711S/3711L

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

gs

Q

gd

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA

––– 4.7 6.0 VGS = 10V, ID = 15A 
––– 6.2 8.5 VGS = 4.5V, ID = 12A 

mΩ

Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200

µA

nA

= 16V, VGS = 0V

V

DS

= -16V

V

GS

Forward Transconductance 53 ––– ––– SVDS = 16V, ID = 30A
Total Gate Charge ––– 29 44 ID = 15A
Gate-to-Source Charge ––– 7.3 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 8.9 ––– VGS = 4.5V
Output Gate Charge ––– 33 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 12 ––– VDD = 10V
Rise Time ––– 220 ––– ID = 30A
Turn-Off Delay Time ––– 17 ––– RG = 1.8Ω

ns

Fall Time ––– 12 ––– VGS = 4.5V 
Input Capacitance ––– 2980 ––– VGS = 0V
Output Capacitance ––– 1770 ––– pF VDS = 10V
Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 460 mJ
Avalanche Current ––– 30 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

Diode Forward Voltage

––– –––

––– –––

110

440

showing the

A

p-n junction diode.

G

––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V 
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V 

Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 16A, VR=10V
Reverse Recovery Charge ––– 61 92 nC di/dt = 100A/µs



Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 16A, VR=10V
Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF3711/3711S/3711L

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

1000

VGS

TOP

15V
10V

4.5V

3.7V

3.5V

3.3V

3.0V

BOTTOM

2.7V

2.7V

20µs PULSEWIDTH
T=25C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

TOP

BOTTOM

VGS
15V
10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

2.7V

D

I , Drain-to-Source Current (A)

20µs PULSEWIDTH

°

T = 150 C

10

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

110A

°

T=25C

J

1.5

°

T = 150 C

J

100

1.0

(Normalized)

0.5

D

I , Drain-to-Source Current (A)

V = 25V

DS

10

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

www.irf.com 3

IRF3711/3711S/3711L

100000

)
F

10000

p

(
e

c
n
a

t

i

c
a
p
a

C
,

1000

C

100

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

= C

= C

+ Cgd, C

gs

gd

+ C

ds

iss

C

rss

C

oss

Ciss

Coss

Crss

VDS, Drain-to-Source Volt age (V )

gd

SHORTED

ds

14

I =

30A

GS

V , Gate-to-Source Voltage (V)

D

12

10

8

6

4

2

V = 16V

DS

V = 10V

DS

FOR TEST CIRCUIT

0

0 20 40 60 80

Q ,TotalGateCharge(nC)

G

SEE FIGURE

13

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA
LIMITED BY RDS(on)

)
A

(

t

100

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.8 1.4 2.0 2.6

°

T = 150 C

J

°

T=25C

J

V ,Source-to-Drain Voltage (V)

SD

V=0V

GS

Fig 7. Typical Source-Drain Diode

1000

n

e

r

r

u
C
e

c

r

u

100

o
S

-

o

t

-

n

i

a

r

10

D
,

D

I

Tc = 25°C
Tj = 150°C

100µsec

1msec

10msec

Single Pulse

1

1 10 100

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

120

100

IRF3711/3711S/3711L

R

D.U.T.

D

+

V

DD

-

V

LIMITED BY PACKAGE

R

80

60

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

DS

V

GS

G

V

GS

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150

T , Case Temperature (C)

C

°

Fig 9. Maximum Drain Current Vs.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

10

thJC

1

D =0.50

0.20
P

1 2

DM

t

1

t

2

0.10

0.1

0.05

Thermal Response (Z )

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1

SINGLE PULSE

(THERMALRESPONSE)

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty fa cto rD = t/t

2. Peak T =P xZ +T

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF3711/3711S/3711L

15V

DRIVER

R

G

20V

V

DS

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

1400

1200

TOP
BOTTOM

1000

+

V

DD

-

800

A

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature (C)

J

°

I

D
13A
19A
30A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

6 www.irf.com

DS

IRF3711/3711S/3711L

R

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-



-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P.W.

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

e-Applied

Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFET® Power MOSFETs

www.irf.com 7

IRF3711/3711S/3711L

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

1

0

1

0

L

O

T

C

O

D

E

1

7

8

9

A

S

S

E

M

B

L

E

D

O

N

W

W

1

9

,

1

9

9

7

I

N

T

H

E

A

S

S

E

M

B

L

Y

L

I

N

E

"

C

"

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

A

S

S

E

M

B

L

Y

L

O

T

C

O

D

E

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

7

=

1

9

9

7

W

E

E

K

1

9

L

I

N

E

C

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40(.055)

3X

1.15(.045)

2.54 (.100)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M,1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK& LEAD MEASUREMENTS DO NOT INCLUDEBURRS.

2X

10.29 (.405)

4

123

3X

3.78(.149)

3.54(.139)

-A-

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.36 (.014) M B A M

4.69 (.185)

4.20 (.165)

-B-

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

LEAD ASSIGNMENTS

1-GATE
2-DRAIN
3 - SOURCE
4-DRAIN

0.55 (.022)

3X

0.46 (.018)

TO-220AB Part Marking Information

8 www.irf.com

D2Pak Package Outline

F

5

3

0

S

T

H

I

S

I

S

A

N

I

R

F

5

3

0

S

W

I

T

H

L

O

T

C

O

D

E

8

0

2

4

A

S

S

E

M

B

L

E

D

O

N

W

W

0

2

,

2

0

0

0

I

N

T

H

E

A

S

S

E

M

B

L

Y

L

I

N

E

"

L

"

A

S

S

E

M

B

L

Y

L

O

T

C

O

D

E

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

0

=

2

0

0

0

W

E

E

K

0

2

L

I

N

E

L

IRF3711/3711S/3711L

2

D

Pak Part Marking Information

www.irf.com 9

IRF3711/3711S/3711L

TO-262 Package Outline

R
E
B

M
U
N
T
R
A
P

E
D
O
C

E

T
A
D

TO-262 Part Marking Information

10 www.irf.com

L
A
N

R

O

E

O

I

I

T

G

F

I

A

O

T

N

L

C

R

E

E

R

T
N

I

7

9

"

9

1

C

"

,

9

E

1

N

I

L

W

L

3

Y

W

0

L

1

N

9

B

3

8

O

L

M

7

R

E

1

I

D

S

E

E

N

S

L

D

A

A

B

O

S

M

E

I

C

E

H

S

T

I

S

T

S

H

O

N

T

L

A

I

:
E

L
P

M
A
X
E

D2Pak Tape & Reel Information

TRR

FEED DIRECTION

FEED DIRECTION

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

TRL

 Starting T

RG = 25Ω, I

 This is applied to D

For recommended footprint and soldering techniques refer to application note #AN-994.

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

330.00
(14.173)

MAX.

1.85 (.073)

1.65 (.065)

10.90(.429)

10.70(.421)

1.60 (.0 63)

1.50 (.0 59)

4.10 (.161)

3.90 (.153)

= 25°C, L = 1.0mH

J

= 30A.

AS

2

13.50 (.532)

12.80 (.504)

IRF3711/3711S/3711L

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

This product has been designed and qualified for the industrial market.

0.368(.0145)

0.342(.0135)

24.30 (.957)

23.90 (.941)

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is only applied to TO-220AB package

4.72 (.136)

4.52 (.178)

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

60.00 (2.362)
MIN.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDESFLANGE DISTORTION @ OUTEREDGE.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

www.irf.com 11

26.40 (1.039)

24.40(.961)

3

30.40 (1.197)
MAX.

4

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 11/01