Datasheet irf3710z Datasheet

PD - 94632

AUTOMOTIVE MOSFET

IRF3710Z

HEXFET® Power MOSFET

Features

O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C I

@ TC = 100°C

D

I

DM

PD @TC = 25°C Maximum Power Dissipation W

V

GS

E

AS

(tested)

E

AS

I

AR

E

AR

T

J

T

STG

Conti n uous Drai n Cur r e nt, V Conti n uous Drai n Cur r e nt, V Pulsed Drain Current

Linear D er ating Factor W/°C Gate-to-Source Volt age V

Single Puls e Avalanche En er gy (Therm ally Limited ) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive A v alanch e Energy

Operating Junction and °C Stor ag e Temperat ur e Ra ng e

Soldering Temperature, for 10 seconds Mount ing torque, 6-32 or M 3 s crew

c

@ 10V (Si licon Limited)

GS

@ 10V (See Fi g. 9)

GS

i

h

d

Thermal Resistance

Parameter Typ. Max. Units

R

JC

θ

R

CS

θ

R

JA

θ

Junction-to-Case ––– 0.92 °C/W Case-to-Sin k , Fl at, Greased Surf ac e

Junction-to-Ambient ––– 62

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com 1

D

V

DSS

R

DS(on)

ID = 59A

S

TO-220AB

Max.

59

42 240 160

1.1

± 20

170 200

See Fig.12a,12b,15,16

-55 to + 175

300 (1. 6m m fr o m case )

10 lbf•in (1.1N•m)

0.50 –––

= 100V

= 18mΩ

A

mJ

A

mJ

03/11/03

IRF3710Z

/

g

Static @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆ΒV R

DS(on)

V

GS(th)

DSS

Drain-to-Sou r c e Br e akdown Voltage 100 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C

J

Stat ic D r ai n- to-Sou rce On-Res i s tance ––– 14 18 Gate Thr es h old Voltage 2.0 ––– 4.0 V

fs For ward Tra nsconductan c e 35 ––– ––– S

I

DSS

GSS

Drain-to-Sou r c e Le akage Current ––– ––– 20 µ A

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Sou rce Reverse Leaka Q Q Q t t t t L

L

C C C C C C

g gs

gd d(on) r d(off) f

D

S

iss oss rss oss oss oss

eff.

Total Gate Charge ––– 82 120 nC Gate-to-Source Charge ––– 19 28 Gate-to-Drai n ( " M iller") Ch arge ––– 27 40 Turn-On Delay Time ––– 17 ––– ns Rise Time ––– 77 ––– Turn-Off Delay Time ––– 41 ––– Fall Time ––– 56 ––– Internal Drain Inductance ––– 4.5 ––– nH Between lead,

Internal Source Indu ctance ––– 7.5 ––– from package

Input Capacitance ––– 2900 ––– pF Output Capacitance ––– 290 ––– Reverse Transfer Capacitance ––– 150 ––– Output Capacitance ––– 1130 ––– Output Capacitance ––– 170 ––– Effe c tive Out pu t C ap ac itance – –– 280 –––

Parameter Min. Typ. Max. Units

––– ––– 250

e ––– ––– -200

Conditions

VGS = 0V, ID = 250µA Referen ce to 25°C, I V

= 10V, ID = 35A

Ω

m

GS

VDS = VGS, ID = 250µA V

= 50V, ID = 35A

DS

V

= 100V, VGS = 0V

DS

V

= 100V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

I

= 35A

D

= 80V

V

DS

V

GS

V

DD

I

= 35A

D

R

G

V

GS

6mm (0.25in.)

and center of die contact V

GS

V

DS

ƒ = 1.0MHz , See Fig . 5 V

GS

V

GS

VGS = 0V, VDS = 0V to 80V

f

= 10V = 50V

= 6.8Ω

f

= 10V

= 0V = 25V

= 0V, VDS = 1.0V, ƒ = 1.0MHz = 0V, VDS = 80V, ƒ = 1. 0M Hz

= 1mA

D

f

D

G

S

Diode Characterist ics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Contin uous Source Current ––– ––– 59 (Body Diode) A

Pulsed Source Current ––– ––– 240 (Body Diode)

c

Diode Forward Vol tage Reverse Recovery Time

Reverse Recovery Charge ––– 100 160 nC Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Paramete r Min. Typ. Max. Units

 Limited by T

RG = 25Ω, I recommended for use above this value.

 I

≤ 35A, di/dt ≤ 380A/µs, V

SD

TJ ≤ 175°C.

, starting TJ = 25°C, L = 0.27mH,

Jmax

= 35A, VGS =10V. Part not

AS

≤ V

DD

(BR)DSS

MOSFET symbol showing the

integral reverse

p-n junct ion diode. ––– ––– 1.3 V –––5075ns

TJ = 25°C, IS = 35A, VGS = 0V

T

= 25°C, IF = 35A, VDD = 25V

J

di/dt = 100A/µs

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

while V

oss

 Limited by T

avalanche performance.

,

 This value determined from sample failure population. 100%

tested to this value in production.

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

Conditions

f

.

DSS

G

2 www.irf.com

D

S

f

IRF3710Z

1000

TOP 15V

)

100

A

(

t

n

e

r

u

10

C e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

D

I

BOTTOM 4.5V

1

0.1

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

1000

TOP 15V

100

BOTTOM 4.5V

10

D

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

120

)

Α

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

TJ = 25°C

V

0

2 4 6 8 10

20µs PULSE WIDTH

DS

TJ = 175°C

= 25V

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

S

(

100

e

c

n

a

t

c

80

u

d

n

o

c

s

n

60

a

r T

d

r

a

40

w

r

o F

,

S

20

F

G

0

0 10 20 30 40 50 60 70

VDS = 15V 20µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

ID, Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com 3

IRF3710Z

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

1 10 100

= 0V, f = 1 MHZ

V

GS

C

= C

iss

C

= C

rss

gd

C

= C

oss

ds

+ Cgd, C

gs

+ C

Ciss

Coss

gd

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000.00

) A

(

100.00

t

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

10.00

1.00

0.10

TJ = 175°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)

SHORTED

ds

V

GS

= 0V

12.0 ID= 35A

)

10.0

V

( e

g

a

t

l

8.0

o V

e

c

r

u

6.0

o S

-

o

t

-

e

t

4.0

a G

,

S G

2.0

V

VDS= 80V VDS= 50V VDS= 20V

0.0 0 20406080100

Q

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

) A

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D ,

Tc = 25°C

D

I

Tj = 175°C Single Pulse

0.1 1 10 100 1000

V

OPERATION IN THIS AREA LIMITED BY RDS(on)

, Drain-toSource V oltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF3710Z

60

50

) A

(

40

t

n

e

r

u

30

C n

i

a

r D

20

,

D

I

10

0

25 50 75 100 125 150 175

TC , Case Temper ature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

10

3.0

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 59A V

= 10V

GS

2.5

2.0

)

d

e

z

i

l

1.5

a m

r

o N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

)

C

1

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.001

D = 0.50

0.20

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

0.10

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

t1 , Rectangular Pulse Dur ation (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF3710Z

A

15V

DRIVER

+

V

DD

-

R

20V

V

DS

G

GS

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

300

)

J m

( y

250

g

r

e

n E

e

200

h

c

n

a

l

a

150

v A

e

s

l

u

100

P e

l

g

n

i S

50

,

S A

E

0

25 50 75 100 125 150 175

TOP 15A

BOTTOM35A

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

5.0

I

D

25A

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

( e

g

4.0

a

t

l

o V

d

l

o

h

s

3.0

e

r

h

t e

t

a G

)

h

2.0

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

1000

IRF3710Z

Duty Cycle = Singl e Pulse

100

) A

(

t

n

e

r

u C

10

e

h

c

n

a

l

a

v A

1

0.1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

200

TOP Single Pulse BOTTOM 10% Duty Cycle

)

J

150

m

( y

g

r

e

n E

e

100

h

c

n

a

l

a

v A

,

50

R A

E

0

25 50 75 100 125 150 175

ID = 35A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRF3710Z

Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

D.U.T

+



-

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

+



V

DD

R

G

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

-

Re-Applied Voltage

Inductor Curent

* V

GS

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (. 555)

13.47 (. 530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (. 255)

6.10 (. 240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.0 52)

1.22 (.0 48)

IRF3710Z

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DI MENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUD E BURR S.

2X

0.69 (.027)

0.36 (.014) M B A M

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

TO-220AB Part Marking Information

R

0

F

1

I

0

1

A

N

S

P

L

E

X

M

A

TO-220AB package is not recommended for Surface Mount Application.

I

:

S

H

T

9

8

7

C

O

L A I

N

1

D

O

E

T

S

S T

O

E

D

L

B

E

M E

H

W

N

A

S

E

L

Y

B

M

7

9

1

,

9

1

W

"

L

C

E

I

N

E

RNA

T

N

I

O

A

L

N

I

F

T

E

C

I

E

R

O

L

O

G

Y

L

B

S

E

M

A

O

E

C

O

D

L

T

P

D

A E

Y W

E

L

I

N

B

NUM

T

A

R

T

D

O

E

C

9

=

7

9

1

A

R

9

1

E

K

E

C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

R

E

7

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/03

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