Datasheet IRF3709S, IRF3709L, IRF3709 Datasheet (International Rectifier)

SMPS MOSFET

PD - 94071

IRF3709

IRF3709S

IRF3709L

Applications

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification
for Telecom and Industrial Use

l High Frequency Buck Converters for

V

DSS

30V 9.0mΩ 90A

HEXFET® Power MOSFET

R

DS(on)

max I

D

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

Benefits

l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V
l Fully Characterized Avalanche Voltage

GS

TO-220AB

IRF3709

D2Pak

IRF3709S

TO-262

IRF3709L

and Current

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 90
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A
I

DM

PD @TC = 25°C Maximum Power Dissipation 120 W
PD @TA = 25°C Maximum Power Dissipation 3.1 W

Linear Derating Factor 0.96 mW/°C

TJ , T

STG

Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 20 V

Pulsed Drain Current 360

Junction and Storage Temperature Range -55 to + 150 °C



Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Junction-to-Case ––– 1.04
Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount) ––– 40

Notes  through  are on page 11

www.irf.com 1

02/20/01

IRF3709/3709S/3709L

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

gs

Q

gd

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA

––– 6.4 9.0 V
––– 7.4 10.5 VGS = 4.5V, ID = 12A 

mΩ

= 10V, ID = 15A 

GS

Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200

µA

nA

V

= 24V, VGS = 0V

DS

= 16V

GS

V

= -16V

GS

Forward Transconductance 53 ––– ––– SVDS = 15V, ID = 30A
Total Gate Charge ––– 27 41 ID = 15A
Gate-to-Source Charge ––– 6.7 ––– nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 9.7 ––– VGS = 5.0V 
Output Gate Charge ––– 22 ––– VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 11 ––– VDD = 15V
Rise Time ––– 171 ––– ID = 30A
Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω

ns

Fall Time ––– 9.2 ––– VGS = 4.5V 
Input Capacitance ––– 2672 ––– VGS = 0V
Output Capacitance ––– 1064 ––– pF VDS = 16V
Reverse Transfer Capacitance ––– 109 ––– ƒ = 1.0MHz

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 382 mJ
Avalanche Current ––– 30 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

Diode Forward Voltage

––– –––

––– –––

90

360

showing the

A

p-n junction diode.

G

––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V 
––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V 

Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 30A, VR=15V
Reverse Recovery Charge ––– 46 69 nC di/dt = 100A/µs



Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 30A, VR=15V
Reverse Recovery Charge ––– 52 78 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF3709/3709S/3709L

1000

100

VGS

TOP

15V
10V

7.0V

5.5V

4.5V

4.0V



3.5V

BOTTOM

2.7V

2.7V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

1000

J

1000

100

VGS

TOP

15V
10V

7.0V

5.5V

4.5V

4.0V



3.5V

BOTTOM

2.7V

2.7V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 150 C

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

90A

°

T = 25 C

100

J

°

T = 150 C

J

1.5

1.0

(Normalized)

0.5

D

I , Drain-to-Source Current (A)

V = 15V

DS

10

2.0 3.0 4.0 5.0 6.0 7.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF3709/3709S/3709L

)

4000

3000

2000

C, Capacitance (pF)

1000

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
+ C

C

iss

C

oss

C

rss

C SHORTED
C
C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

6

I =

30A

D

5

4

3

2

GS

1

V , Gate-to-Source Voltage (V)

0

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

G

V = 24V

DS

V = 15V

DS

V = 6V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on

100

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.8 1.4 2.0 2.6

°

T = 150 C

J

°

T = 25 C

J

V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

1000

10us

100

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 150 C
Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

(

)

100

IRF3709/3709S/3709L

R

D.U.T.

D

+

V

DD

-

V

LIMITED BY PACKAGE

80

R

DS

V

GS

G

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

thJC

1

D = 0.50

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

0.20
P

0.10

0.1

0.05

Thermal Response(Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

THERMAL RESPONSE

Notes:

1. Duty factor D =t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF3709/3709S/3709L

A

15V

DRIVER

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

1200

TOP

1000

800

+

V

DD

-

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150

Starting T , Junction Temperature ( C)

J



BOTTOM

I

D
13A
19A
30A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

-

D

6 www.irf.com

DS

IRF3709/3709S/3709L

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period



P.W.

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRF3709/3709S/3709L

)

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)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

(

)

)

)

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)

)

)

)

A

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

.415

2.87 (.113

2.62 (.103

15.24 (.600

14.84 (.584

14.09 (.555

13.47 (.530

10.54

10.29 (.405

1 2 3

4

6.47 (.255

6.10 (.240

1.15 (.045
MIN

4.06 (.1 6 0

3.55 (.1 4 0

3.78 (.149

3.54 (.139

- A -

4.69 (.185

4.20 (.165

- B -

1.32 (.05 2

1.22 (.04 8

LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - SO U R C E
4 - D R A IN

0.93 (.0 3 7

3X

1.40 (.055

3X

1.15 (.045

2.54 (.100

NOTES:
1 D IMEN S ION ING & T O L E RAN C IN G P E R AN S I Y1 4 .5 M, 1 9 8 2 . 3 O U T L IN E C O NF O R M S T O J E D EC OU TL IN E T O-2 2 0 A B .
2 C O N T R O L L IN G D IM E N SION : IN CH 4 HEA TS INK & LE AD M E A SU R E M ENT S D O NOT INCLUDE BURRS.

2X

0.69 (.0 2 7

0.36 (.014) M B A M

0.55 (.0 2 2

3X

0.46 (.0 1 8

2.92 (.11 5

2.64 (.10 4

TO-220AB Part Marking Information

EXAM PLE : THIS IS AN IRF1010
W IT H A SS EMB L Y
LOT CODE 9 B1 M

INTE RN AT ION AL
RECTIFIER
LOGO

ASSEMBLY
LO T C ODE

IRF1010

9246

9B 1M

PART NUMBER

DATE CODE
(YYWW)
YY = YEAR
W W = W E E K

8 www.irf.com

D2Pak Package Outline

A

IRF3709/3709S/3709L

10.54 (.415)

1.40 (.055)
MA X.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIM ENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

2

Pak Part Marking Information

D

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS
1 - G ATE
2 - D RA IN
3 - S OU RC E

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
RE CTIFIER
LO G O

A S SEMBLY
LO T CO D E

F530S

9246

9 B 1M

PART NUMB ER

DATE CODE
(Y Y W W )
YY = YEAR
WW = WEEK

www.irf.com 9

IRF3709/3709S/3709L

TO-262 Package Outline

TO-262 Part Marking Information

10 www.irf.com

D2Pak Tape & Reel Information

TRR

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

IRF3709/3709S/3709L

1.60 (.063)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.03 9)

24.40 (.961 )
3

Notes:

Repetitive rating; pulse width limited by



max. junction temperature.

 Starting T

RG = 25Ω, I

 This is applied to D

= 25°C, L = 0.85mH

J

= 30A.

AS

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is only applied to TO-220AB package

For recommended footprint and soldering techniques refer to application note #AN-994.

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

60.00 (2.362)
MIN.

30.40 (1.197)
MAX.

4

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.01/01

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