Datasheet IRF3707S, IRF3707L, IRF3707 Datasheet (International Rectifier)

SMPS MOSFET

Applications

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification
for Telecom and Industrial use

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

PD - 93937B

IRF3707

IRF3707S

IRF3707L

HEXFET® Power MOSFET

V

DSS

30V 12.5mΩ 62A

R

DS(on)

max I

D

l Very Low R
l Fully Characterized Avalanche Voltage

and Current

DS(on)

TO-220AB

IRF3707

D2Pak

IRF3707S

TO-262

IRF3707L

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 62
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 52 A
I

DM

PD @TC = 25°C Maximum Power Dissipation 87 W
PD @TC = 70°C Maximum Power Dissipation 61 W

Linear Derating Factor 0.59 mW/°C

TJ , T

STG

Drain-Source Voltage 30 V

Gate-to-Source Voltage ± 20 V

Pulsed Drain Current 248

Junction and Storage Temperature Range -55 to + 175 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994

Junction-to-Case ––– 1.73
Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount)* ––– 40

Notes  through  are on page 10

www.irf.com 1

8/22/00

IRF3707/3707S/3707L

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

gs

Q

gd

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA

––– 9.0 12.5 V
––– 12.6 17 VGS = 4.5V, ID = 12A 

mΩ

= 10V, ID = 15A 

GS

Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 24V, VGS = 0V

µA

= 16V

GS

nA

V

= -16V

GS

Forward Transconductance 37 ––– ––– SVDS = 15V, ID = 49.6A
Total Gate Charge ––– 19 ––– ID = 24.8A
Gate-to-Source Charge ––– 8.2 ––– nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 6.3 ––– VGS = 4.5V 
Output Gate Charge ––– 18 27 VGS = 0V, VDS = 15V
Turn-On Delay Time ––– 8.5 ––– VDD = 15V
Rise Time ––– 78 ––– ID = 24.8A
Turn-Off Delay Time ––– 11.8 ––– RG = 1.8Ω

ns

Fall Time ––– 3.3 ––– VGS = 4.5V 
Input Capacitance ––– 1990 ––– VGS = 0V
Output Capacitance ––– 707 ––– VDS = 15V
Reverse Transfer Capacitance ––– 50 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 213 mJ
Avalanche Current ––– 62 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

Diode Forward Voltage

––– –––

––– –––

62

248

showing the

A

p-n junction diode.

G

––– 0.88 1.3 V TJ = 25°C, IS = 31A, VGS = 0V 
––– 0.8 ––– TJ = 125°C, IS = 31A, VGS = 0V 

Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 31A, VR=20V
Reverse Recovery Charge ––– 49 74 nC di/dt = 100A/µs



Reverse Recovery Time ––– 42 63 ns TJ = 125°C, IF = 31A, VR=20V
Reverse Recovery Charge ––– 62 93 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF3707/3707S/3707L

1000

100

3.5V

10

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH
Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

VGS

TOP 10.0V

9.0V

8.0V

7.0V

6.0V

5.0V

4.5V
BOTTOM 3.5V

1000

100

3.5V

10

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH
Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

62A

I =



D

VGS

TOP 10.0V

9.0V

8.0V

7.0V

6.0V

5.0V

4.5V
BOTTOM 3.5V

°

T = 25 C



J

T = 175 C



100

D

I , Drain-to-Source Current (A)



10

3.0 4.0 5.0 6.0 7.0 8.0

V , Gate-to-Source Voltage (V)

GS

J

V = 15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

Vs. Temperature

www.irf.com 3

IRF3707/3707S/3707L

)

3000

2500

2000

1500

1000

C, Capacitance (pF)

500

0

1 10 100

V

=

0V,
C

C
C

iss



oss



rss

f = 1MHz

+ C
+ C

C SHORTED

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

C



C

C

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

10

I =

24.8A

D



8

6

4

2

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

V = 15V

DS



Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED



BY R

DS(on



100

°

T = 175 C



J

10

°

T = 25 C



J

1

SD

I , Reverse Drain Current (A)

V = 0 V



0.1

0.2 0.6 1.0 1.4 1.8

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

100

10

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C



Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10us



100us



1ms



10ms

Forward Voltage

4 www.irf.com

70

(

)

60

50

40

30

D

20

I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF3707/3707S/3707L

R

D.U.T.

t

d(off)tf

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE



THERMAL RESPONSE

Thermal Response (Z )

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t

1



1 2

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF3707/3707S/3707L

(BR)

A

)

0.10

Ω

0.09

0.08

VGS = 4.5V

0.07

0.06

0.05

0.04

0.03

, Drain-to-Source On Resistance (

0.02

VGS = 10V

0.01

DS ( on )

0.00

R

0 50 100 150 200 250

ID , Drain Current ( A )

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

Fig 14a&b. Basic Gate Charge Test circuit

and Waveforms

)

0.013

Ω

0.012

0.011

ID = 31A

0.010

, Drain-to -Source On Resistance (

DS(on)

0.009

R

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V

Gate -to -Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

600

TOP

500

400

300



BOTTOM

I

D

10.1A

20.7A

24.8A

15V

V

t

p

I

AS

DSS

V

R

G

20V

L

DS

D.U.T

I

AS

0.01

t

Ω

p

DRIVER

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

+

V

DD

-

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

°

6 www.irf.com

200

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

TO-220AB Package Outline

A

Dimensions are shown in millimeters (inches)

IRF3707/3707S/3707L

10.54 (.415

2.87 (.113

2.62 (.103

15.24 (.600

14.84 (.584

14.09 (.555

13.47 (.530

1.40 (.055

3X

1.15 (.045

2.54 (.100

NOTES:
1 D IME NS ION ING & T O LER A NC IN G P E R A NSI Y 1 4 .5 M , 19 8 2 . 3 O U TLINE C O N FO R M S T O J E DEC O UTL IN E T O -2 2 0 A B.
2 C O N T RO L L IN G DIME N SION : IN C H 4 H E ATSIN K & L E A D M EASU R EMEN T S DO NOT INCLUDE BURRS.

2X

10.29 (.405

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255

6.10 (.240

1.15 (.045
MIN

4.06 (.1 6 0

3.55 (.1 4 0

0.93 (.0 3 7

0.69 (.0 2 7

3.78 (.149

3.54 (.139

- A -

4.69 (.185

4.20 (.165

- B -

1.32 (.05 2

1.22 (.04 8

2.92 (.11 5

2.64 (.10 4

LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - SO U R C E
4 - D R A IN

0.55 (.0 2 2

3X

0.46 (.0 1 8

TO-220AB Part Marking Information

EXAM PLE : THIS IS AN IRF1010
W IT H A S S EM B L Y
LOT CODE 9 B1M

INTE RN AT ION AL
RECTIFIER
LOG O

ASSEMBLY
LO T CODE

IRF1010

9246

9B 1M

PART NUMBER

DATE CODE
(YYWW)
YY = YEAR
W W = W EEK

www.irf.com 7

IRF3707/3707S/3707L

A

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

1.40 (.055)
MA X.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.0 1 0) M B A M

4.69 (.185)

4.20 (.165)

D2Pak Part Marking Information

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNM E N TS
1 - G A TE
2 - D RA IN
3 - SOURCE

10.16 (.400)
REF .

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF .

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
RE CTIFIE R
LO G O

A S SEMBLY
LO T CO D E

F530S

9246

9 B 1 M

PART NUMB ER

DATE CODE
(Y Y W W )
YY = YEAR
WW = WEEK

8 www.irf.com

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

IRF3707/3707S/3707L

TO-262 Part Mar king Information

www.irf.com 9

IRF3707/3707S/3707L

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CON TRO LLING DIMENSION: MILLIMET ER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLAN GE DISTO RTION @ OU TER EDG E.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

60.00 (2.362)
M IN.

30.40 (1.197)
MA X.

4

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 0.7 mH

J

= 24.8 A.

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 This is only applied to TO-220AB package

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]

Data and specifications subject to change without notice. 8/00

10 www.irf.com