Datasheet IRF3704L, IRF3704, IRF3704S Datasheet (International Rectifier)

SMPS MOSFET

Applications

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification
for Telecom and Industrial use

l High Frequency Buck Converters for

Computer Processor Power

Benefits

l Ultra-Low Gate Impedance

PD - 93888B

IRF3704

IRF3704S

IRF3704L

HEXFET® Power MOSFET

V

DSS

20V 9.0mΩ 77A

R

DS(on)

max I

D



l Very Low R
l Fully Characterized Avalanche Voltage

DS(on)

and Current

TO-220AB

IRF3704

D2Pak

IRF3704S

TO-262

IRF3704L

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

V

GS

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 77 
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 64 A
I

DM

PD @TC = 25°C Maximum Power Dissipation 87 W
PD @TC = 70°C Maximum Power Dissipation 61 W

Linear Derating Factor 0.59 mW/°C

TJ , T

STG

Drain-Source Voltage 20 V

Gate-to-Source Voltage ± 20 V

Pulsed Drain Current 308

Junction and Storage Temperature Range -55 to + 175 °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994

Junction-to-Case ––– 1.73
Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W
Junction-to-Ambient ––– 62
Junction-to-Ambient (PCB mount)* ––– 40

Notes  through  are on page 10

www.irf.com 1

8/22/00

IRF3704/3704S/3704L

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Q

g

Q

gs

Q

gd

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA

––– 6.3 9.0 V
––– 9.8 13.5 VGS = 4.5V, ID = 12A 

mΩ

= 10V, ID = 15A 

GS

Gate Threshold Voltage 1 .0 ––– 3.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 16V, VGS = 0V

µA

= 16V

GS

nA

V

= -16V

GS

Forward Transconductance 42 ––– ––– SVDS = 10V, ID = 57A
Total Gate Charge ––– 19 ––– ID = 28.4A
Gate-to-Source Charge ––– 8.1 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 6.4 ––– VGS = 4.5V 
Output Gate Charge ––– 16 24 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 8.4 ––– VDD = 10V
Rise Time ––– 98 ––– ID = 28.4A
Turn-Off Delay Time ––– 12 ––– RG = 1.8Ω

ns

Fall Time ––– 5.0 ––– VGS = 4.5V 
Input Capacitance ––– 1996 ––– VGS = 0V
Output Capacitance ––– 1085 ––– VDS = 10V
Reverse Transfer Capacitance ––– 155 ––– pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol Parameter Typ. Max. Units

E

AS

I

AR

Single Pulse Avalanche Energy ––– 216 mJ
Avalanche Current ––– 71 A

Diode Characteristics

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

Diode Forward Voltage

––– –––

––– –––

77

308

showing the

A

p-n junction diode.

G

––– 0.88 1.3 V TJ = 25°C, IS = 35.5A, VGS = 0V 
––– 0.82 ––– TJ = 125°C, IS = 35.5A, VGS = 0V 

Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 35.5A, VR=20V
Reverse Recovery Charge ––– 45 68 nC di/dt = 100A/µs



Reverse Recovery Time ––– 41 62 ns TJ = 125°C, IF = 35.5A, VR=20V
Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs



2 www.irf.com

D

S

IRF3704/3704S/3704L

1000

100

3.5V

10

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH
Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

VGS

TOP 10.0V

9.0V

8.0V

7.0V

6.0V

5.0V

4.5V
BOTTOM 3.5V

1000

100

3.5V

10

, Drain-to-Source Current (A)

D

I

20µs PULSE WIDTH
Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

77A

I =



D

VGS

TOP 10.0V

9.00V

8.0V

7.0V

6.0V

5.0V

4.5V
BOTTOM 3.5V

1.5

1.0

100

°

T = 25 C



J

°

T = 175 C



J

(Normalized)

0.5

D

I , Drain-to-Source Current (A)

V = 15V

DS



10

3.0 4.0 5.0 6.0 7.0 8.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

10V



GS

°

Vs. Temperature

www.irf.com 3

IRF3704/3704S/3704L

)

3000

2500

2000

1500

1000

C, Capacitance (pF)

500

0

1 10 100

V

=

0V,
C

C
C

C



C

iss



oss

C



rss

f = 1MHz

+ C
+ C

C SHORTED

GS

C

=

issgsgd , ds

C

=

rssgd



C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

100



°

T = 175 C

J

10

I =

28.4A

D



8

6

4

2

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

V = 10V

DS



Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED



BY R

DS(on



10us



100us

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.5 0.8 1.1 1.4 1.7 2.0

V ,Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

°

T = 25 C



J

V = 0 V



GS



1ms

10

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C



Single Pulse

1

0.1 1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS



10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF3704/3704S/3704L

(

)

R

D.U.T.

D

+

V

DD

-

90



LIMITED BY PACKAGE

75

60

45

R

V

DS

V

GS

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

30

D

I , Drain Current (A)

15

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



THERMAL RESPONSE

t , Rectangular Pulse Duration (sec)

1

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

P

DM

t

1



Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

1 2

J DM thJC C

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5

IRF3704/3704S/3704L

(BR)

A

)

0.020

Ω

VGS = 4.5V

0.015

0.010

, Drain-to-Source On Resistance (

DS ( on )

0.005

R

0 50 100 150 200 250 300

VGS = 10V

ID , Drain Current ( A )

Fig 12. On-Resistance Vs. Drain Current

Current Regulator

Same Type as D.U.T.

.2µF

12V

V

GS

50KΩ

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

V

GS

+

V

DS

-

I

D

V

G

QGSQ

Q

G

GD

Charge

Fig 14a&b. Basic Gate Charge Test circuit

and Waveforms

)

0.010

Ω

0.009

0.008

ID = 35.5A

0.007

, Drain-to -Source On Resistance (

DS(on)

0.006

R

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V

Gate -to -Source Voltage (V)

GS,

Fig 13. On-Resistance Vs. Gate Voltage

600

TOP

500

400

300



BOTTOM

I

D

11.6A

23.8A

28.4A

15V

V

t

p

I

AS

DSS

V

R

G

20V

L

DS

D.U.T

I

AS

0.01

t

Ω

p

DRIVER

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

+

V

DD

-

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

Fig 15c. Maximum Avalanche Energy

Vs. Drain Current

°

6 www.irf.com

200

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

TO-220AB Package Outline

A

Dimensions are shown in millimeters (inches)

IRF3704/3704S/3704L

10.54 (.415

2.87 (.113

2.62 (.103

15.24 (.600

14.84 (.584

14.09 (.555

13.47 (.530

1.40 (.055

3X

1.15 (.045

2.54 (.100

NOTES:
1 D IME NS IONING & TO LE R A N C ING P E R A N SI Y 1 4 .5 M, 1982 . 3 O U TL INE CO NFO R M S TO JE D EC O U TLIN E TO -2 2 0 A B .
2 C O N TR OLL IN G D IM E N S IO N : INC H 4 HE A T S IN K & L EA D M EAS U R E M E N T S DO N OT INCLUDE BURRS.

2X

10.29 (.405

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255

6.10 (.240

1.15 (.045
MIN

4.06 (.1 6 0

3.55 (.1 4 0

0.93 (.0 3 7

0.69 (.0 2 7

3.78 (.149

3.54 (.139

- A -

4.69 (.185

4.20 (.165

- B -

1.32 (.05 2

1.22 (.04 8

2.92 (.11 5

2.64 (.10 4

LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - SOU RC E
4 - D R A IN

0.55 (.0 2 2

3X

0.46 (.0 1 8

TO-220AB Part Marking Information

EXAM PLE : THIS IS AN IRF1010
W IT H A S S EM B L Y
LOT C OD E 9 B1 M

INTE RN AT ION AL
RECTIFIER
LOG O

ASSEMBLY
LO T C O D E

IRF1010

9246

9B 1M

PART NUMBER

DATE CODE
(YYWW)
YY = YEAR
W W = W E E K

www.irf.com 7

IRF3704/3704S/3704L

A

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

1.40 (.055)
MA X.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.010) M B A M

4.69 (.185)

4.20 (.165)

D2Pak Part Marking Information

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNM E N TS
1 - G A TE
2 - D RAIN
3 - SOURCE

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
RE CTIFIER
LO G O

A S SEMBLY
LO T CO D E

F530S

9246

9 B 1M

PART NUMB ER

DATE CODE
(Y Y W W )
YY = YEAR
WW = WEEK

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TO-262 Package Outline

Dimensions are shown in millimeters (inches)

IRF3704/3704S/3704L

TO-262 Part Marking Information

www.irf.com 9

IRF3704/3704S/3704L

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTRO LLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTO RTION @ OU TER EDG E.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

60.00 (2.362)
MIN.

30.40 (1.197)
MAX.

4

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

 Starting T

RG = 25Ω, I

= 25°C, L = 0.5 mH

J

= 28.4 A.

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 This is only applied to TO-220AB package

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

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Data and specifications subject to change without notice. 8/00

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