Datasheet IRF3703PbF Datasheet

PD - 94971

SMPS MOSFET

IRF3703PbF

HEXFET® Power MOSFET

Applications

l Synchronous Rectification
l Active ORing

l Lead-Free

Benefits

l Ultra Low On-Resistance

l Low Gate Impedance to Reduce Switching

Losses

l Fully Avalanche Rated

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100  A
I

DM

PD @TC = 25°C Power Dissipation 230 W
PD @TA = 25°C Power Dissipation 3.8

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J, TSTG

Pulsed Drain Current  1000

Linear Derating Factor 1.5 W/°C
Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 175 °C

V

DSS

R

DS(on)

max I

30V 2.8mΩ 210A

TO-220AB

D



Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.65
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient ––– 62

Notes  through  are on page 8

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02/02/04

IRF3703PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

I

DSS

I

GSS

Dynamic @ TJ = 25°C (unless otherwise specified)

g

fs

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance ––– 2590 ––– VGS = 0V, VDS = 0V to 24V 

oss

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient

J

Static Drain-to-Source On-Resistance

––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA

––– 2.3 2.8 VGS = 10V, ID = 76A 
––– 2.8 3.9 VGS = 7.0V, ID = 76A 

mΩ

Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 24V, VGS = 0V

µA

nA

VGS = -20V

Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 150 ––– ––– S VDS = 24V, ID = 76A
Total Gate Charge ––– 209 ––– ID = 76A
Gate-to-Source Charge ––– 62 ––– nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 42 ––– VGS = 10V, 
Turn-On Delay Time ––– 18 ––– VDD = 15V, VGS = 10V
Rise Time ––– 123 ––– ID = 76A
Turn-Off Delay Time ––– 53 ––– RG = 1.8Ω

ns

Fall Time ––– 24 ––– VGS = 10V 
Input Capacitance ––– 8250 ––– VGS = 0V
Output Capacitance ––– 3000 ––– VDS = 25V
Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 10360 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 3060 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz

Avalanche Characteristics

Parameter Typ. Max. Units

E

AS

I

AR

E

AR

Single Pulse Avalanche Energy ––– 1700 mJ
Avalanche Current ––– 76 A
Repetitive Avalanche Energy ––– 23 mJ

Diode Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

210

1000

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS = 76A, VGS = 0V 
Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 76A, VDS = 16V
Reverse RecoveryCharge ––– 185 275 nC di/dt = 100A/µs 

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D

S

IRF3703PbF

10000

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

10000

1000

100

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 175 C

10

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics

2.5

I =

D

210AA

2.0

°

1000

100

D

I , Drain-to-Source Current (A)

10

4.0 5.0 6.0 7.0 8.0 9.0 10.0

Fig 3. Typical Transfer Characteristics

T = 25 C

J

T = 175 C

J

V = 15V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

1.5

°

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

V =

GS

°

10V

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF3703PbF

14000

12000

10000

8000

6000

C, Capacitance (pF)

4000

2000

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

V , Drain-to- Sourc e Voltage (V)

DS

f = 1MHz

C

+ C

+ C

C

C

C

iss

oss

rss

C SHORTED
C
C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

76A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 40 80 120 160 200 240 280 320

Q , Total Gate Charge (nC)

G

V = 24V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

°

T = 175 C

J

10

°

T = 25 C

J

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.0 0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

1000

100

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C
Single Pulse

10

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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240

200

160

120

LIMITED BY PACKAGE

IRF3703PbF

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

R

D.U.T.

D

+

V

DD

-

80

D

I , Drain Current (A)

40

Fig 10a. Switching Time Test Circuit

V

DS

90%

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

10%
V

GS

t

Fig 9. Maximum Drain Current Vs.

d(on)tr

Case Temperature

Fig 10b. Switching Time Waveforms

1

D = 0.50

thJC

0.20

0.1

0.10

0.05

0.02

0.01

0.01

Thermal Response (Z )

0.001

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

P

DM

1 2

J DM thJC C

t

d(off)tf

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF3703PbF

A

15V

DRIVER

+

-

V

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

DD

6000

TOP

5000

4000

3000

2000

1000

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

°

D
31A
54A
76A

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

3mA

Current Sampling Resistors

+

V

D.U.T.

I

G

DS

-

I

D

10 V

Q

G

Q

GS

V

G

Q

GD

12V

V

GS

Charge

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRF3703PbF

Peak Diode Recovery dv/dt Test Circuit



D.U.T

+



-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-



-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P. W .

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

®

Power MOSFET

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IRF3703PbF

TO-220AB Package Outline

10.54 (.415)

1.40 (.055)

1.15 (.045)

2X

10.29 (.405)

4

1 2 3

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

3X

2.54 (.100)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982 . 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASURE MENTS DO NOT INCLUDE BURRS.

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.36 (.014) M B A M

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

3X

LEAD ASSI GNMENTS

LEAD ASSIGNMENT S

HEXFET

1 - GATE
2 - DRAIN

1- GATE

3 - SOURCE

2- DRAIN
3- SOURCE

4 - DRAIN

4- DRAIN

0.55 (.022)

0.46 (.018)

TO-220AB Part Marking Information

EXAMPLE:

T HIS IS AN IRF1010

LOT CODE 1789
ASS EMB LED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"

Note: "P" in assembly line
position in dicates "Lead-Free"

INT ER NATI ONAL

RECTIFIER

LOGO

AS S E MB L Y
LOT CODE

IGBTs, CoPACK

1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR

PART NUMBER

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

Notes:



Repetitive rating; pulse width limited by

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

max. junction temperature.

 C

eff. is a fixed capacitance that gives the same charging time

 Starting T

RG = 25Ω, I

 I

SD

T

≤ 175°C

J

= 25°C, L = 0.6mH

J

AS

≤ 76A, di/dt ≤ 100A/µs, V

= 76A.

DD

≤ V

(BR)DSS

,

oss

as C

oss

while V

is rising from 0 to 80% V

DS

DSS

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.02/04

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