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PD - 93918
SMPS MOSFET
IRF3703
HEXFET® Power MOSFET
Applications
l Synchronous Rectification
l Active ORing
Benefits
l Ultra Low On-Resistance
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A
I
DM
PD @TC = 25°C Power Dissipation 230 W
PD @TA = 25°C Power Dissipation 3.8
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J, TSTG
Pulsed Drain Current 1000
Linear Derating Factor 1.5 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 175 °C
V
DSS
R
DS(on)
max I
30V 2.8mΩ 210A
TO-220AB
D
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.65
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient ––– 62
Notes through are on page 8
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IRF3703
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 2590 ––– VGS = 0V, VDS = 0V to 24V
oss
Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– 2.3 2.8 V
––– 2.8 3.9 V
mΩ
= 10V, ID = 76A
GS
= 7.0V, ID = 76A
GS
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 24V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 150 ––– ––– SVDS = 24V, ID = 76A
Total Gate Charge ––– 209 ––– ID = 76A
Gate-to-Source Charge ––– 62 ––– nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 42 ––– VGS = 10V,
Turn-On Delay Time ––– 18 ––– VDD = 15V, VGS = 10V
Rise Time ––– 123 ––– ID = 76A
Turn-Off Delay Time ––– 53 ––– RG = 1.8Ω
ns
Fall Time ––– 24 ––– VGS = 10V
Input Capacitance ––– 8250 ––– VGS = 0V
Output Capacitance ––– 3000 ––– VDS = 25V
Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 10360 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 3060 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 1700 mJ
Avalanche Current ––– 76 A
Repetitive Avalanche Energy ––– 23 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
210
1000
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS = 76A, VGS = 0V
Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 76A, VDS = 16V
Reverse RecoveryCharge ––– 185 275 nC di/dt = 100A/µs
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D
S
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IRF3703
10000
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics
10000
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output Characteristics
2.5
I =
D
210AA
2.0
°
1000
100
D
I , Drain-to-Source Current (A)
10
4.0 5.0 6.0 7.0 8.0 9.0 10.0
Fig 3. Typical Transfer Characteristics
T = 25 C
J
T = 175 C
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
1.5
°
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T , Junction Temperature ( C)
J
V =
10V
GS
°
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF3703
)
14000
12000
10000
8000
6000
C, Capacitance (pF)
4000
2000
0
1 10 100
V
=
0V,
GS
C
=
issgsgd , ds
C
=
rssgd
C
=
oss dsgd
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
+ C
C
C
C
C SHORTED
iss
oss
rss
C
C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I =
76A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
0
0 40 80 120 160 200 240 280 320
Q , Total Gate Charge (nC)
G
V = 24V
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on
13
100
°
T = 175 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
1000
100
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
10
1 10 100
°
J
V , Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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(
)
240
200
160
120
LIMITED BY PACKAGE
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRF3703
R
D
D.U.T.
+
V
DD
-
80
D
I , Drain Current (A)
40
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
thJC
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
THERMAL RESPONSE
P
DM
Thermal Response (Z )
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
t
d(off)tf
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3703
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
DD
6000
TOP
5000
4000
3000
2000
1000
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
°
D
31A
54A
76A
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
.3µF
3mA
Current Sampling Resistors
+
V
D.U.T.
I
G
DS
-
I
D
10 V
Q
G
Q
GS
V
G
Q
GD
12V
V
GS
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF3703
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
®
Power MOSFET
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IRF3703
A
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - GA T E
2 - DR AIN
3 - SOURCE
4 - DR AIN
0.93 (.037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIMENSION ING & T OL E R A NC ING PER ANSI Y14.5M, 1982. 3 OUTLINE C O N F O R M S TO JEDEC OUTLINE TO-220 AB .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
0.69 (.027)
0.3 6 (.0 1 4) M B A M
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
W IT H A S S E M BL Y
LO T C O D E 9 B 1 M
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
RG = 25Ω, I
I
SD
T
J
= 25°C, L = 0.6mH
J
= 76A.
AS
≤ 76A, di/dt ≤ 100A/µs, V
≤ 175°C
DD
≤ V
(BR)DSS
This product has been designed and qualified for the industrial market.
INTERNATIONAL
R E C T IF IE R
LO G O
A SSE MB L Y
LO T C O DE
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
,
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
while V
2.92 (.115)
2.64 (.104)
PART NUMBER
IRF1010
9246
9B 1 M
is rising from 0 to 80% V
DS
DATE CODE
(YYWW)
YY = YEA R
WW = WEEK
3X
0.55 (.022)
0.46 (.018)
DSS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/01
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