Datasheet IRF352, IRF353, IRF351 Datasheet (Intersil)

IRF350

March 1999 File Number 1826.3Data Sheet

15A, 400V, 0.300 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.

Formerly developmental type TA9399.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF350 TO-204AA IRF350

NOTE: When ordering, include the entire part number.

Features

• 15A, 400V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.300Ω

Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

TOP VIEW

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF350

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF350 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

400 V
400 V

15

9.0
60 A

±20 V
150 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Paackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

700 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

Q

g

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA, (Figure 10) 400 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX,VGS

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

= 10V 15 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 8.0A, (Figures 8, 9) - 0.25 0.300 Ω
VDS> I

D(ON) xrDS(ON)MAX,ID

VDD= 180V, ID≈ 8.0A, RG = 4.7Ω, RL= 22.5Ω,
VGS= 10V, (Figures 17, 18)
MOSFET switching times are essentially indepen­dent of operating temperature

= 8A, (Figure 12) 8 10 - S

- - 35 ns

- - 65 ns

- - 150 ns

- - 75 ns

VGS = 10V, ID = 18A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figures 14, 19, 20)

G(REF)

DSS,

Gate charge is essentially independent of operating
temperature

- 79 120 nC

-38-nC

-41-nC

VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 11) - 2000 - pF

- 400 - pF

- 100 - pF

Measured Between the
Contact Screw on Head­er that is Closer to
Source and Gate Pins
and Center of Die

Measured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad

Free Air Operation - - 30

Modified MOSFET Sym­bol Showing the Internal
Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- 0.83 -

o
o

C/W
C/W

2

IRF350

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width is limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 40V, starting TJ = 25oC, L = 5.66µH, RG = 50Ω, peak IAS = 15A. (Figures 15, 16).

Modified MOSFET
Symbol Showing the In­tegral Reverse P-N

D

- - 15 A

- - 60 A

Junction Diode

G

S

TJ = 25oC, ISD= 15A, VGS = 0V, (Figure 13) - - 1.6 V

SD

TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs - 1000 - ns

rr

TJ = 150oC, ISD = 15A, dISD/dt = 100A/µs - 6.6 - µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1.0

0.5

20

16

12

8

DRAIN CURRENT (A)

D,

I

4

0

50 75 10025 150

TC,CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.2

0.1

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01
10

0.05

0.02

0.01

SINGLE PULSE

-5

NOTES:
DUTY FACTOR: D = t1/t
T

-4

10

-3

10

t

, RECTANGULAR PULSE DURATION (S)

1

-2

10

0.1 1 10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

3

= PD x Z

J

θJC

P

x R

DM

θJC

t

1

t

t

2

2

2

+ T

C

IRF350

Typical Performance Curves

100

10

OPERATION IN THIS
REGION IS LIMITED
BY r

1

, DRAIN CURRENT (A)

D

I

= 25oC

T

C

TJ = MAX RATED
SINGLE PULSE

0.1

1.0 10

DS(ON)

25

VDS, DRAIN TO SOURCE VOLTAGE (V)

Unless Otherwise Specified (Continued)

10µs

100µs

1ms

10ms
100ms

DC

100

5020 200

500

20

VGS = 6.0V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

50 100 150 2000 250

V

DS,

PULSE DURATION = 80µs

VGS = 5.5V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V
VGS = 3.5V

DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

10

PULSE DURATION = 80µs

8

6

4

, DRAIN CURRENT (A)

D

I

2

VGS = 10V

VGS = 5.0V

VGS = 4.5V

VGS = 4.0V

VGS = 3.5V

12

V

> I

DS

PULSE DURATION = 80µs

10

8

6

4

, DRAIN TO SOURCE CURRENT (A)

2

x r

D(ON)

TJ = 25oC

TJ = -55oC

DS(ON)MAX

TJ = 125oC

300

0

0

123405
V

DRAIN TO SOURCE VOLTAGE (V)

DS,

DS(ON)

I

0 123 78

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

0.8

30

VGS = 10V

J

40

VGS = 20V

= 25oC.

60 70

0.7

0.6

0.5

0.4

, DRAIN TO SOURCE

0.3

ON RESISTANCE (Ω)

DS(ON)

r

0.2

0

050

r

MEASURED WITH CURRENT PULSE OF

DS(ON)

2.0µs DURATION. INITIAL T
(HEATING EFFECT OF 2.0µs PULSE IS MINIMAL)

10 20

ID,DRAIN CURRENT (A)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCEvs GATE

VOLTAGE AND DRAIN CURRENT

2.2
ID = 8A

V

= 10V

GS

1.8

1.4

1.0

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.2

-40 40

0

T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 9. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

645

80

120

160

4

IRF350

Typical Performance Curves

1.25

1.15

1.05

0.95

BREAKDOWN VOLTAGE

0.85

NORMALIZED DRAIN TO SOURCE

0.75
0-40 40 80 120 160

, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

20

VDS > I
PULSE DURATION = 80µs

16

12

TJ = 125oC

8

D(ON)

x r

DS(ON)MAX

TJ = 25oC

TJ = -55oC

4000

3200

2400

1600

C, CAPACITANCE (pF)

800

0

010

C

ISS

C

OSS

C

RSS

V

DS,

20 30

DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

= CGS + C

C
C

C

ISS
RSS

OSS

= C

≈ C

GD

GD

+ C

DS

40 50

GD

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

2

2

10

10

TJ = 150oC

TJ = 25oC

TJ = 25oC

TJ = 150oC

, TRANSCONDUCTANCE (S)

4

fs

g

0

4 8 12 16020

ID,DRAIN CURRENT (A)

, SOURCE TO DRAIN CURRENT (A)

SD

I

1

01234

VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20

ID = 18A

15

10

5

GATE TO SOURCE VOLTAGE (V)

GS,

V

0

28 56 84 1120 140

Q

g(TOT),

VDS = 80V

VDS = 200V

VDS = 320V

TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

5

IRF350

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

V

DS

D

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

DUT

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

CURRENT

REGULATOR

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

10%

90%

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

6

IRF350

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