Datasheet irf3205z Datasheet

PD - 94653

Pulsed Drain C

c

Single Pul

d

Single Pul

h

Aval

c

R

g

AUTOMOTIVE MOSFET

IRF3205Z

HEXFET® Power MOSFET

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C ID @ TC = 100°C I

@ TC = 25°C

D

I

DM

PD @TC = 25°C

V

GS

E

AS (Thermally limited)

(Tested )

E

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V

urrent Power Dissipation W Linear Derating Factor W/°C

Gate-to-Source Voltage V

se Avalanche Energy se Avalanche Energy Tested Value

anche Current

epetitive Avalanche Energy

Operating Junction and Storage Temperature Range °C

Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw



@ 10V (Silicon Limited)

GS

@ 10V

GS

@ 10V (Package Limited)

GS

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.9 Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient ––– 62

www.irf.com 1

D

V

DSS

R

DS(on)

S

ID = 75A

TO-220AB

Max.

110

78

75 440 170

1.1

± 20

180 250

See Fig.12a, 12b, 15, 16

-55 to + 175

300 (1.6mm from case )

y

in (1.1Nym)

10 lbf

= 55V

= 6.5mΩ

mJ

A

3/25/03

IRF3205Z

/

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

gfs Forward Transconductance 71 ––– ––– S I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff.

oss

Drain-to-Source Breakdown Voltage 55 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 4.9 6.5 Gate Threshold Voltage 2.0 ––– 4.0 V

VGS = 0V, ID = 250µA Reference to 25°C, I

mΩ

V VDS = VGS, ID = 250µA V

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Total Gate Charge ––– 76 110 Gate-to-Source Charge ––– 21 ––– nC Gate-to-Drain ("Miller") Charge ––– 30 ––– Turn-On Delay Time ––– 18 ––– Rise Time ––– 95 ––– Turn-Off Delay Time ––– 45 ––– ns Fall Time ––– 67 –––

V V V V I V VGS = 10V VDD = 28V I R VGS = 10V

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductanc e ––– 7.5 ––– from package

and center of die contact

Input Capacitance ––– 3450 ––– Output Capacitance ––– 550 ––– Reverse Transfer Capacitance ––– 310 ––– pF Output Capacitance ––– 1940 ––– Output Capacitance ––– 430 ––– Effective Output Capacitance ––– 640 –––

VGS = 0V V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz V V

GS

DS DS DS GS GS

= 66A

D

DS

= 66A

D

G

DS

GS GS

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 75 (Body Diode) A

I

V t Q t

SM

SD

rr

on

Pulsed Source Current ––– ––– 440 (Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 28 42 ns Reverse Recovery Charge ––– 25 38 nC Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.08mH

Jmax

= 66A, VGS =10V. Part not

AS

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C  Limited by T

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

avalanche performance.  This value determined from sample failure population. 100% tested to this value in production.

MOSFET symbol showing the

integral reverse p-n junction diode.

= 25°C, IS = 66A, VGS = 0V

T

J

TJ = 25°C, IF = 66A, VDD = 25V di/dt = 100A/µs

2 www.irf.com

Conditions

= 1mA

D

= 10V, ID = 66A

e

= 25V, ID = 66A = 55V, VGS = 0V = 55V, VGS = 0V, TJ = 125°C = 20V = -20V

= 44V

e

= 6.8 Ω

e

= 25V

= 0V, VDS = 44V, ƒ = 1.0MHz = 0V, VDS = 0V to 44V

f

Conditions

e

.

DSS

e

IRF3205Z

1000

V

TOP 15V

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

10V

7.0V

6.0V

5.5V

100

5.0V BOTTOM 4.5V

10

D

1

0.1 1 10 100

8.0V

GS

4.5V

20µs PULSE WIDTH Tj = 25°C

VDS, Drain-to-Source Voltage (V)

1000

) A

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

10

n

i

a

r D

,

D

I

1

4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0

TJ = 25°C

V

DS

20µs PULSE WIDTH

= 25V

VGS, Gate-to-Source Voltage (V)

TJ = 175°C

1000

V

TOP 15V

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

10V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

100

D

10

0.1 1 10 100

8.0V

GS

4.5V

20µs PULSE WIDTH Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

120

) S

(

100

e

c

n

a

t

c

80

u

d

n

o

c

s

60

n

a

r T

d

r

a

40

w

r

o F

,

s

20

f G

0

0 20406080100

ID, Drain-to-Source Current (A)

TJ = 175°C

V

= 10V

DS

20µs PULSE WIDTH

TJ = 25°C

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

www.irf.com 3

IRF3205Z

6000

5000

) F

4000

p

( e

c

n

a

t

3000

i

c

a

p

a C

2000

, C

1000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

gs gd ds

Ciss

Coss Crss

+ Cgd, C

+ C

iss

C

rss

C

oss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

(

t

n

e

r

u C n

i

a

r D e

s

r

e

v

e R

,

D S

I

100.0

10.0

TJ = 175°C

TJ = 25°C

1.0

0.1

0.2 0.6 1.0 1.4 1.8 2.2 VSD, Source-toDrain Voltage (V)

20

SHORTED

ds

gd

ID= 66A

) V

(

16

e

g

a

t

l

o V

12

e

c

r

u

o S

-

o

8

t

-

e

t

a G

,

S

4

G

V

0

0 20 40 60 80 100 120

VDS= 44V VDS= 28V

VDS= 11V

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

V

GS

= 0V

10000

) A

1000

(

t

n

e

r

u C

100

e

c

r

u

o S

-

o

10

t

-

n

i

a

r D

,

1

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100 1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF3205Z

120

LIMITED BY PACKAGE

100

) A

(

80

t

n

e

r

u C

60

n

i

a

r D

,

40

D

I

20

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

2.5

e

c

n

a

t

s

i

s

e R n O

)

e

d

c

e

r

z

u

i

l

o

a

S

-

m

r

o

t

o

-

n

N

i

(

a

r D

,

)

n

o

( S D

R

ID = 66A V

= 10V

GS

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Vs. Temperature

D = 0.50

)

C

J

h

t

0.1

Z (

e

s

n

o

p

s

e R

l

a

0.01

m

r

e

h T

0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF3205Z

A

15V

DRIVER

+

-

V

DD

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

350

)

J m

(

300

y

g

r

e

n

250

E e

h

c

n

200

a

l

a

v A

150

e

s

l

u P

e

100

l

g

n

i S

,

50

S A

E

0

25 50 75 100 125 150 175

I

TOP 27A 47A BOTTOM 66A

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

D

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

D

Fig 13b. Gate Charge Test Circuit

( e

g

a

t

l

o

3.0

V d

l

o

h

s

e

r

h

t e

t

a

2.0

G

)

h

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

IRF3205Z

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs

100

) A

(

t

n

e

r

u C

10

e

h

c

n

a

l

a

v A

1

0.1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

avalanche pulsewidth, tav assuming ∆Tj = 25°C due to

avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

200

TOP Single Pulse BOTTOM 10% Duty Cycle

)

160

J m

( y

g

r

e

n

120

E e

h

c

n

a

l

80

a

v A

,

R A

40

E

ID = 66A

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

Vs. Temperature

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRF3205Z





Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

1

0

1

0

L

O

T

C

O

D

E

1

7

8

9

A

S

E

M

B

L

E

D

O

N

W

1

9

,

1

9

7

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

C

"

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

A

S

E

M

B

L

Y

L

O

T

C

O

D

E

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

7

=

1

9

7

W

E

K

1

9

L

I

N

E

C

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.045 ) MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

IRF3205Z

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100 )

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

0.69 (.027)

0.36 (.014) M B A M

0.55 (.022 )

3X

0.46 (.018 )

2.92 (.115)

2.64 (.104)

TO-220AB Part Marking Information

TO-220AB packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/03

www.irf.com 9