Datasheet IRF3205SPBF Datasheet

PD - 95106

IRF3205SPbF

IRF3205LPbF

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free

G

Description

Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on­resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.

2

The D
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.

Pak is a surface mount power package capable of

2

Pak is suitable for high current applications

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
I

DM

PD @TC = 25°C Power Dissipation 200 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  390

Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 62 A
Repetitive Avalanche Energy 20 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

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Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient (PCB mounted, steady-state)* ––– 40

HEXFET® Power MOSFET

D

S

D2Pak

IRF3205SPbF

V

DSS

R

DS(on)

ID = 110A

TO-262

IRF3205LPbF

= 55V

= 8.0mΩ



°C

03/11/04

IRF3205S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C

µA

nA

= 55V, VGS = 0V

V

DS

VGS = -20V
Total Gate Charge ––– ––– 146 ID = 62A
Gate-to-Source Charge ––– ––– 35 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 101 ––– ID = 62A
Turn-Off Delay Time ––– 50 ––– RG = 4.5Ω

ns

Fall Time ––– 65 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 3247 ––– VGS = 0V
Output Capacitance ––– 781 ––– VDS = 25V
Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1050 264 mJ I

= 62A, L = 138µH

AS

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

* When mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

2 www.irf.com

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)

––– –––

––– –––

110

390

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V 
Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A
Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

= 25°C, L = 138µH

J

= 62A. (See Figure 12)

AS

≤ 62A, di/dt ≤ 207A/µs, V

DD

≤ V

(BR)DSS

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

 This is a typical value at device destruction and represents

,

operation outside rated limits.

This is a calculated value limited to T

= 175°C.

J

G

D

S

IRF3205S/LPbF

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

T = 25 C

J

T = 175 C

J

°

1000

100

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 175 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

2.0

°

1.5

I =

D

107A

1.0

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

4 6 8 10 12

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF3205S/LPbF

6000

5000

)
F

4000

p

(
e
c
n
a

t

i

3000

c
a
p
a

C
,

2000

C

1000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

gs

= C

= C

C

C

Ciss

Coss

Crss

+ Cgd, C

gd

+ C

ds

gd

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

T = 175 C

100

°

J

SHORTED

ds

16

I =

62A

D

14

12

10

8

6

4

GS

V , Gate-to-Source Voltage (V)

2

0

0 20 40 60 80 100 120

Q , Total Gate Charge (nC)

G

V = 44V

DS

V = 27V

DS

V = 11V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

1000

BY R

DS(on)

10us

10

°

T = 25 C

J

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

Fig 7. Typical Source-Drain Diode

Forward Voltage

Forward Voltage

GS

100

100us

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

1ms

10ms

Fig 8. Maximum Safe Operating Area

4 www.irf.com

120

LIMITED BY PACKAGE

100

80

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

IRF3205S/LPbF

R

D.U.T.

D.U.T.

D

t

t

d(off)tf

d(off)tf

+

V

-

V

V

DS

DS

V

V

GS

GS

R

R

G

G

10V

10V

Pulse Width ≤ 1 µs

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

Fig 10a. Switching Time Test Circuit

V

V

DS

DS

90%

90%

10%

10%
V

V

GS

GS

t

t

d(on)tr

d(on)tr

DD

Fig 9. Maximum Drain Current Vs.

Fig 9. Maximum Drain Current Vs.

Case Temperature

Case Temperature

1

D = 0.50

Fig 10b. Switching Time Waveforms

Fig 10b. Switching Time Waveforms

thJC

0.20

0.1

0.10

P

1 2

DM

t

1

t

2

0.05

0.02

Thermal Response(Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

SINGLE PULSE

(THERMAL RESPONSE)

Note s:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

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IRF3205S/LPbF

A

15V

DRIVER

R

V

G

20V

DS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

500

TOP

400

+

V

DD

-

300

200

100

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

I

D
25A
44A
62A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

6 www.irf.com

+

V

DS

-

IRF3205S/LPbF

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P. W .

Period

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRF3205S/LPbF

2

D

Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information (Lead-Free)

T H IS IS AN IR F 530S WIT H

LOT CODE 8024
ASS E MBL E D ON WW 02, 2000
IN THE ASSEMBLY LINE "L"

N ote: "P" in as semb ly line
po s i tio n i nd icate s " L ead- F ree"

INT E R N AT ION AL

RECTIFIER

LOGO

AS SE MB LY
LOT CODE

F530S

PART NUMBE R

DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L

OR

IN T E R N AT ION AL

RECTIFIER

LOGO

AS S EM B LY
LOT CODE

F 530S

8 www.irf.com

PART NUMB ER

DATE CODE

P = DESIGNATE S LEAD-FR EE

PRODUCT (OPTIONAL)

YEAR 0 = 2000
WEEK 02

A = ASSEMBLY SITE CODE

TO-262 Package Outline

IRF3205S/LPbF

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

TO-262 Part Marking Information

TH IS IS AN IRL 3103L

EXAMPLE:

LOT CODE 1789
ASS EMBLE D ON WW 19, 1997
IN THE ASS EMBLY LINE "C"

Note: "P" in ass embly line
pos iti on indicates "Lead-F ree"

INTE RNAT IONAL

RECTIFIER

LOGO

AS S E MB L Y
LOT CODE

PART NUMBE R

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

OR

INTE RNATIONAL

RECT IFIE R

LOGO

ASSEMBLY
LOT CODE

www.irf.com 9

PART NUMBER

DAT E CODE

P = DES IGNATE S LE AD-F REE

PRODUCT (OPT IONAL)

YEAR 7 = 1997
WE EK 19

A = ASSEMBLY SITE CODE

IRF3205S/LPbF

D2Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

FEED DI RECTION

TRL

FEED DI RECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.3 0 (.95 7)

23.9 0 (.94 1)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

This product has been designed and qualified for the industrial market.

27.40 (1.079)

23.90 ( .941)

4

60.00 (2. 362)
MIN.

30.40 (1.197)

26.40 (1.039)

24.40 (.961)

3

MA X.

4

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.03/04

10 www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/