Datasheet irf2807z Datasheet

PD - 94659

g

AUTOMOTIVE MOSFET

IRF2807Z

HEXFET® Power MOSFET

Features

O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratin g s

Parameter Units

ID @ TC = 25°C

@ TC = 100°C

I

D

@ TC = 25°C

I

D

I

DM

PD @TC = 25°C

V

GS

E

AS

(tested)

E

AS

I

AR

E

AR

T

J

T

STG

Continu ous Dra in C urr ent , V Continu ous Dra in C urr ent , V Continu ous Dra in C urr ent , V Pulsed Drain Current Maximum Power Dissip ation W

Linear Derat ing Factor W/°C Gate-to- So ur c e V ol tage V

Single Pulse Avalanche Energy (Thermally Limited)

le Pulse Av alanche Ene rgy Tested Value

Sin Avalanche Current Repetit iv e Av alanche Energy

Operating Junction and °C Storage Temperature Range

Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw

c

@ 10V (Sili c on Li mited)

GS

@ 10V (See Fig. 9)

GS

@ 10V (Package Limited)

GS

i

h

d

Thermal Resistance

Parameter Typ. Max. Units

R

JC

θ

R

CS

θ

R

JA

θ

Junction-to-Case ––– 0.90 °C/W Case- to-Sink, Flat, G reased S urface

Junction-to-Ambient ––– 62

HEXFET® is a registered trademark of International Rectifier.

www.irf.com 1

D

V

DSS

R

DS(on)

ID = 75A

S

Max.

89 63

75 350 170

1.1

± 20

160 200

See Fig. 12 a, 12b,15,16

-55 to + 175

300 (1.6mm fr o m case )

10 lbf•in (1.1N •m)

0.50 –––

= 75V

= 9.4mΩ

TO-220AB

A

mJ

A

mJ

04/04/03

IRF2807Z

/

g

Static @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆ΒV R

DS(on)

V

GS(th)

DSS

Drain-to-Sou r c e Br e akdown V ol t age75––––––V

∆T

Breakdown Voltage Temp. Coef fi cient ––– 0.073 ––– V/°C

J

Stat ic D r ai n- to-Sou rce On-Res i s tance ––– 7.5 9.4 Gate Thr es h old Volt age 2.0 ––– 4.0 V

fs Forward Transconductanc e 67 ––– ––– S

I

DSS

GSS

Drain-to-Sou r c e Le akage Current ––– ––– 20 µA

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Sou rce Rever s e Le aka Q Q Q t

d(on)

t

r

t

d(off)

t

f

L

C C C C C C

g gs gd

D

S

iss oss rss oss oss

eff.

oss

Total Gate Charge ––– 71 110 nC

Gate-to-Source Charge ––– 19 29

Gate-to-Drai n ( " M iller") Ch arge ––– 28 42

Turn-On Delay Time ––– 18 ––– ns

Rise Time ––– 79 –––

Turn-Off Delay Time ––– 40 – ––

Fall Time ––– 45 –––

Internal Drain Inductance ––– 4.5 ––– nH Between lead,

Internal Source Indu ctance ––– 7.5 ––– from package

Input Capacitance ––– 3270 ––– pF

Output Capacitance ––– 420 –––

Reverse Transfer Capacitance ––– 240 –––

Output Capacitance ––– 1590 –––

Output Capacitance ––– 280 –––

Effe c tive Out pu t C ap ac itance ––– 440 –––

Parameter Min. Typ. Max. Units

––– ––– 250

e ––– ––– -200

Conditions

VGS = 0V, ID = 250µA Reference to 25 °C, I V

= 10V, ID = 53A

Ω

m

GS

VDS = VGS, ID = 250µA V

= 25V, ID = 53A

DS

V

= 75V, VGS = 0V

DS

V

= 75V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

I

= 53A

D

= 60V

V

DS

V

GS

V

DD

I

= 53A

D

R

G

V

GS

6mm (0.25in.)

and center of die contact V

GS

V

DS

ƒ = 1.0MHz , See Fig . 5 V

GS

V

GS

VGS = 0V, VDS = 0V to 60V

f

= 10V = 38V

= 6.2Ω

f

= 10V

= 0V = 25V

= 0V, VDS = 1.0V, ƒ = 1.0MHz = 0V, VDS = 60V, ƒ = 1. 0M Hz

= 1mA

D

f

D

G

S

Diode Characterist ics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Contin uous Source Current ––– ––– 89

(Body Diode) A

Pulsed Source Current ––– ––– 350

(Body Diode)

c

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge ––– 80 120 nC

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

Paramete r Min. Typ. Max. Units

 Limited by T

RG = 25Ω, I recommended for use above this value.

 I

≤ 53A, di/dt ≤ 420A/µs, V

SD

TJ ≤ 175°C.

, starting TJ = 25°C, L = 0.12mH,

Jmax

= 53A, VGS =10V. Part not

AS

≤ V

DD

(BR)DSS

MOSFET symbol showing the

integral reverse

p-n junct ion diode. ––– ––– 1.3 V –––4669ns

TJ = 25°C, IS = 53A, VGS = 0V

T

= 25°C, IF = 53A, VDD = 25V

J

di/dt = 100A/µs

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

oss

as C

while V

oss

 Limited by T

avalanche performance.

,

 This value determined from sample failure population. 100%

tested to this value in production.

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

Conditions

f

.

DSS

G

2 www.irf.com

D

S

f

IRF2807Z

1000

TOP 15V

)

100

A

(

t

n

e

r

u C

10

e

c

r

u

o S

-

1

o

t

-

n

i

a

r D

,

0.1

D

I

4.5V

BOTTOM 4.5V

20µs PULSE WIDTH Tj = 25°C

0.01

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

1000

VGS 10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

TOP 15V

) A

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D

,

D

I

4.5V

BOTTOM 4.5V

20µs PULSE WIDTH Tj = 175°C

1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

150

VGS 10V

8.0V

7.0V

6.0V

5.5V

5.0V

)

Α

(

t

100

n

e

r

u C e

c

r

10

u

o S

-

o

t

-

n

i

a

r

1

D

,

D

I

TJ = 25°C

TJ = 175°C

V

DS

= 25V

20µs PULSE WIDTH

0.1 4 6 8 10 12

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

S

(

125

e

c

n

a

t

c

100

u

d

n

o

c

s

75

n

a

r T

d

r

50

a w

r

o F

,

s

25

f

G

TJ = 25°C

TJ = 175°C

0

0 25 50 75 100 125 150

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com 3

IRF2807Z

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

V

= 0V, f = 1 MHZ

GS

C

= C

+ Cgd, C

gs

gd

+ C

ds

gd

iss

C

rss

C

oss

C

iss

C

oss

C

rss

1 10 100

VDS, Drain-to-Sour ce Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000

SHORTED

) V

( e

g

a

t

l

o V

e

c

r

u

o S

-

o

t

-

e

t

a G

,

S G

V

10000

12.0 ID= 53A

10.0

8.0

6.0

4.0

2.0

0.0 0 1020304050607080

VDS= 60V VDS= 38V VDS= 15V

Q

Total G ate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

OPERATION IN THIS AREA

) A

(

t

100

n

e

r

u C n

i

a

r

10

D e

s

r

e

v

e R

,

1

D S

I

0

TJ = 175°C

TJ = 25°C

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drai n Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

) A

1000

(

t

n

e

r

u C

100

e

c

r

u

o S

-

10

o

t

-

n

i

a

r D ,

1

D

Tc = 25°C

I

Tj = 175°C Single Pulse

0.1 1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

100µsec

1msec

10msec

VDS, Drain-to-Source Voltage (V)

Forward Voltage

4 www.irf.com

IRF2807Z

100

90 80

)

70

A

(

t

n

60

e

r

u C

50

n

i

a

r

40

D ,

30

D

I

20 10

0

25 50 75 100 125 150 175

TC , Case Temper ature (°C)

Limited By Package

Fig 9. Maximum Drain Current vs.

Case Temperature

10

2.5

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 53A V

= 10V

GS

2.0

)

d

e

z

i

l

1.5

a m

r

o N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

)

C

1

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.001

D = 0.50

0.20

0.1

0.01

0.10

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Dur ation (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zt hjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF2807Z

A

15V

DRIVER

+

-

V

DD

R

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

300

)

J m

( y

250

g

r

e

n E

e

200

h

c

n

a

l

a

v

150

A e

s

l

u P

100

e

l

g

n

i S

50

,

S A

E

0

25 50 75 100 125 150 175

TOP 22A

BOTTOM53A

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

5.0

I

D

38A

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

( e

g

4.0

a

t

l

o V

d

l

o

h

s

3.0

e

r

h

t e

t

a G

)

h

2.0

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

IRF2807Z

1000

Duty Cycle = Singl e Pulse

100

) A

(

t

n

e

r

u C

10

e

h

c

n

a

l

a

v A

1

0.1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

200

TOP Single Pulse BOTTOM 10% Duty Cycle

)

J m

150

( y

g

r

e

n E

e

h

100

c

n

a

l

a

v A

,

R

50

A

E

ID = 53A

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRF2807Z

Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

D.U.T

+



-

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

+



V

DD

R

G

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

-

Re-Applied Voltage

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (. 555)

13.47 (. 530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (. 255)

6.10 (. 240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.0 52)

1.22 (.0 48)

IRF2807Z

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DI MENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUD E BURR S.

2X

0.69 (.027)

0.36 (.014) M B A M

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

TO-220AB Part Marking Information

R

0

F

1

I

0

1

A

N

S

P

L

E

X

M

A

TO-220AB package is not recommended for Surface Mount Application.

I

:

S

H

T

9

8

7

C

O

L A I

N

1

D

O

E

T

S

S T

O

E

D

L

B

E

M

A

E

H

W

N

S

E

L

Y

B

M

7

9

1

,

9

1

W

"

L

C

E

I

N

E

RNA

T

N

I

O

A

L

N

I

F

T

E

C

I

E

R

O

L

O

G

Y

L

B

S

E

M

A

O

E

C

O

D

L

T

A

R

P

T

D

A

E

A

R

E

Y W

E

K

L

E

I

N

T

C

C 7

1

NUM

D

O = 9

R

E

B

E

7

9

1

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 04/03

www.irf.com 9