Datasheet IRF 2805 Datasheet

Typical Applications

l Industrial Motor Drive

Features

l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free

G

Description

This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.

PD - 95493A

IRF2805PbF

HEXFET® Power MOSFET

D

V

= 55V

DSS

R

S

TO-220AB

DS(on)

I

D

= 4.7mΩ

= 75A

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 175
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 120 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
I

DM

PD @TC = 25°C Power Dissipation 330 W

V

GS

E

AS

E

(6 sigma) Single Pulse Avalanche Energy Tested Value 1220

AS

I

AR

E

AR

T

J

T

STG

Pulsed Drain Current  700

Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 450 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com 1

07/22/10

IRF2805PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 1600 ––– VGS = 0V, VDS = 0V to 44V

oss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩ VGS = 10V, ID = 104A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 91 ––– ––– S VDS = 25V, ID = 104A

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 55V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– 150 230 ID = 104A
Gate-to-Source Charge ––– 38 57 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– 52 78 VGS = 10V
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 120 ––– ID = 104A
Turn-Off Delay Time ––– 68 ––– RG = 2.5Ω

ns

Fall Time ––– 110 ––– VGS = 10V 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 5110 ––– VGS = 0V
Output Capacitance ––– 1190 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6470 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 860 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

175

700

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V 
Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 104A
Reverse Recovery Charge ––– 290 430 nC di/dt = 100A/µs 
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 C

eff. is a fixed capacitance that gives the same charging time

oss

= 25°C, L = 0.08mH

J

= 104A. (See Figure 12).

AS

≤ 104A, di/dt ≤ 240A/µs, V

DD

≤ V

(BR)DSS

as C
 Limited by T
avalanche performance.
 This value determined from sample failure population. 100%

,

tested to this value in production.

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

DSS

D

G

S

D

G

S

.

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IRF2805PbF

1000

)
A

(
t
n
e

r

r

100

u
C
e

c

r
u
o
S

­o

t

-

10

n

i
a

r
D

,

D

I

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

1

0.1 1 10 100

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

1000

TJ = 25°C

)
A

(

t
n
e

r

r
u

C
e

c

r

100

u
o
S

­o

t

­n

i
a

r
D

,

D

I

10

4. 0 5.0 6. 0 7. 0 8.0 9.0 10. 0

V

= 25V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

TJ = 175°C

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,
I

1000

100

D

VGS
TOP 15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

10

0.1 1 10 100

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

200

)
S

(

160

e
c
n
a

t
c
u
d

120

n
o
c
s
n
a

r
T

80

d

r
a

w

r
o
F

40

,
s

f
G

TJ = 175°C

TJ = 25°C

V

= 25V

DS

20µs PULSE WIDTH

0

0 40 80 120 160 200

ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

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IRF2805PbF

)
F
p

(
e

c
n
a

t

i
c
a
p
a

C
,

C

10000

8000

6000

4000

2000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

is s

SHORTED

C

= C

rss

C

= C

oss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

)
A

(
t

100.0

n
e

r

r
u

C
n

i
a

r

10.0

D
e

s

r
e
v
e
R
,

1.0

D
S

I

0.1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

TJ = 175°C

TJ = 25°C

VSD, Source-toDrain Voltage (V)

gd

ds

+ Cgd, C

gs

+ C

gd

Cis s

Cos s

Crss

20

ds

ID= 104A

)
V

(

16

e
g
a

t

l
o

V

12

e
c

r
u
o
S

­o

8

t

­e

t
a

G
,

S

4

G

V

VDS= 44V

VDS= 28V

0

0 40 80 120 160 200 240

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

)
A

(
t

1000

n
e

r

r
u

C
e

c

r

100

u
o

S

­o

t

­n

i
a

r

10

D
,

D

I

V

= 0V

GS

Tc = 25 °C
Tj = 175°C
Single Pulse

1

1 10 100 1000

OPERATION IN THIS AREA
LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF2805PbF

180

LIMITED BY PACKAGE

150

120

90

60

D

I , Drain Current (A)

30

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

3.0

175A

I =

D

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 10. Normalized On-Resistance

Vs. Temperature

V =

GS

°

10V

D = 0.50

thJC

0.20

0.1

0.10

0.05

0.02

0.01

0.01

Thermal Response (Z )

0.001

0.00001 0.0001 0.001 0.01 0.1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

P

DM

Not es:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF2805PbF

A

15V

DRIVER

+

V

DD

-

R

20V

V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

1000

TOP

800

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( C)

BOTTOM

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

I

D
43A

87A

104A

)
V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

Current Sampling Resistors

I

G

+

V

DS

-

D

Fig 13b. Gate Charge Test Circuit

(
e

g
a

t

l
o

3.0

V
d

l
o
h
s
e

r
h

t
e

t
a

2.0

G

)
h

t

(
S
G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

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IRF2805PbF

10000

Duty Cycle = Single Pulse

1000

)
A

(
t
n
e

r
r

u
C

100

e
h
c
n
a

l
a
v
A

10

1

1. 0E-07 1. 0E-06 1. 0E-05 1. 0E-04 1.0E-03 1.0E- 02 1. 0E-01

0.01

0.05

0.10

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax

500

TOP Single Pul se
BOTTOM 10% Duty Cycle

)

400

J
m

(
y

g

r
e
n

300

E
e

h
c
n
a

l

200

a
v

A
,

R
A

100

E

ID = 104A

Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T
every part type.

2. Safe operation in Avalanche is allowed as long asT
not exceeded.

. This is validated for

jmax

jmax

3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

0

25 50 75 100 125 150 175

Starting TJ , Junc tion Temperature (°C)

Fig 16. Maximum Avalanche Energy

Vs. Temperature

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t
Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRF2805PbF





Reverse
Recovery
Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance
Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied
Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

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IRF2805PbF

TO-220AB Package Outline(

Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAMPLE : TH IS IS AN IRF1010

LOT CODE 1789
ASS EMBLED ON WW 19, 2000
IN THE ASSE MBLY LINE "C"

Note: "P" in ass embly line position

indi cates " Lead - F ree"

INTE RNATIONAL

RECTIFIE R

LOGO

ASSEMBLY
LOT CODE

PART NUMBER

DATE CODE
YEAR 0 = 2000
WE E K 19
LINE C

TO-220AB package is not recommended for Surface Mount Application.

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.07/2010

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