Datasheet irf2804 Datasheet

PD - 94436B

AUTOMOTIVE MOSFET

IRF2804

HEXFET® Power MOSFET

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

G

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 280 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 200 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75 I

DM

PD @TC = 25°C Power Dissipation 330 W

V

GS

E

AS

E

(tested) Single Pulse Avalanche Energy Tested Value 1160

AS

I

AR

E

AR

T

J

T

STG

Pulsed Drain Current  1080

Linear Derating Factor 2.2 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 670 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy mJ Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

D

V

= 40V

DSS

R

S

DS(on)

ID = 75A

= 2.3mΩ

TO-220AB

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.45 Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient ––– 62

HEXFET(R) is a registered trademark of International Rectifier.

www.irf.com 1

12/11/02

IRF2804

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 2210 ––– VGS = 0V, VDS = 0V to 32V

oss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

L=0.24mH, RG = 25Ω, I Part not recommended for use above this value.

 I

SD

TJ ≤ 175°C

2 www.irf.com

Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 1.8 2.3 mΩ VGS = 10V, ID = 75A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA Forward Transconductance 130 ––– ––– S VDS = 10V, ID = 75A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 200 V Gate-to-Source Reverse Leakage ––– ––– -200

––– ––– 20 ––– ––– 250 VDS = 40V, VGS = 0V, TJ = 125°C

µA

nA

= 40V, VGS = 0V

V

DS

= 20V

GS

VGS = -20V Total Gate Charge ––– 160 240 ID = 75A Gate-to-Source Charge ––– 41 62 nC VDS = 32V Gate-to-Drain ("Miller") Charge ––– 66 99 VGS = 10V Turn-On Delay Time ––– 13 ––– VDD = 20V Rise Time ––– 120 ––– ID = 75A Turn-Off Delay Time ––– 130 ––– RG = 2.5Ω

ns

Fall Time ––– 130 ––– VGS = 10V 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact Input Capacitance ––– 6450 ––– VGS = 0V Output Capacitance ––– 1690 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 840 ––– ƒ = 1.0MHz, See Fig. 5 Output Capacitance ––– 5350 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 1520 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

280

1080

showing the

A

p-n junction diode. Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V  Reverse Recovery Time ––– 56 84 ns TJ = 25°C, IF = 75A, VDD = 20V Reverse Recovery Charge ––– 67 100 nC di/dt = 100A/µs  Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.  C

eff. is a fixed capacitance that gives the same charging time

, starting TJ = 25°C,

Jmax

= 75A, VGS =10V.

AS

≤ 75A, di/dt ≤ 220A/µs, V

DD

≤ V

(BR)DSS

,

oss

as C  Limited by T

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

DSS

.

avalanche performance.  This value determined from sample failure population. 100% tested to this value in production.

G

D

S

D

S

IRF2804

10000

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

1000

100

10

VGS TOP 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

1

0.1 1 10 100

Tj = 25°C

VDS, Drain-to-Source Voltage (V)

1000

)

Α

(

t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

,

D

I

TJ = 175°C

100

TJ = 25°C

10

V

= 10V

DS

1

4.0 5.0 6.0 7.0 8.0 9.0

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

10000

) A

( t n e

r

1000

u C e

c

r u o S

o

t

n

i a

r D

,

D

I

100

VGS

V

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

GS

8.0V

4.5V

20µs PULSE WIDTH

10

0.1 1 10 100

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

300

) S

(

250

e c n a

t c

200

u d n o c s

150

n a

r T

d

r

100

a w

r o F ,

50

s

f

G

0

0 40 80 120 160 200

ID, Drain-to-Source Current (A)

V

= 10V

DS

20µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

www.irf.com 3

IRF2804

) F

p

( e

c n a

t

i c a p a

C ,

C

12000

10000

8000

6000

4000

2000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

is s

rss

oss

= C

gs

gd

ds

C

+ Cgd, C

+ C

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

( t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

100.0

10.0

TJ = 175°C

1.0 TJ = 25°C

0.1

0.2 0.6 1.0 1.4 1.8 2.2

VSD, Source-toDrain Voltage (V)

gd

ds

Cis s

Cos s

Crss

SHORTED

V

GS

= 0V

10000

) A

( t

1000

n e

r

r u

C e

c r

u o S

o

t

n

i a

r D ,

D

I

20

ID= 75A

) V

(

16

e g a

t

l o

V

12

e c

r u o S

o

8

t

e

t a

G ,

S

4

G

V

VDS= 32V

VDS= 20V VDS= 8.0V

0

0 40 80 120 160 200 240

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

OPERATION IN THIS AREA LIMITED BY RDS(on)

100

10

Tc = 25° C Tj = 175°C Single Pulse

1

0 1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF2804

300

LIMITED BY PACKAGE

250

) A

(

200

t n e

r

r u

150

C n

i a

r D

,

100

D

I

50

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

2.0

e c n a

t s

i s e

R n O e

)

c

d

r

e

u

z

i

o

l

S

a

m

o

t

r

-

o

n

i

N

(

a

r D

,

) n o

( S D

R

ID = 75A

V

= 10V

GS

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

Vs. Temperature

)

Z (

e s n o p

s e

R l a

m

r e h T

C J h

t

0. 001

D = 0.50

0.1

0. 01

1E- 006 1E-005 0. 0001 0. 001 0. 01 0. 1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF2804

A

15V

DRIVER

+

V

DD

-

R

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

1600

) J

m (

y g

r e

1200

n E

e h c

n a

l a

800

v A

e s

l u P

e

l

400

g n

i S

, S A

E

0

25 50 75 100 125 150 175

I

TOP 31A 53A BOTTOM 75 A

Starting TJ, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

D

) V

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

( e

g a

t

l o

3.0

V d

l o h s e

r h

t e

t a

2.0

G

) h

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

IRF2804

10000

Duty Cycle = Single Pulse

1000

) A

( t n e

r

r u

C

100

e h c n a

l a v A

10

1

1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax

800

TOP Single Pulse BOTTOM 10% Duty Cycle

) J

m

600

( y

g

r e n E

e

400

h c n a

l a v A ,

200

R A

E

ID = 75A

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

. This is validated for

jmax

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

avalanche pulse.

= Average power dissipation per single

D (ave)

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

0

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

Vs. Temperature

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRF2804

+

-

+

-

Reverse Recovery Current

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

D.U.T

+



-

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

+



V

DD

R

G

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

Re-Applied Voltage

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

V

DD

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

IRF2804

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANS I Y14.5M, 1982. 3 OUTLINE CONFORMS TO JED EC OUTLINE TO-220A B. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASU REMENTS DO NOT INCLUDE BURRS.

2X

0.69 (.027)

0.36 (.014) M B A M

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

TO-220AB Part Marking Information

(;$03/(7+,6,6$1,5)

/27&2'( $66(0%/('21 ,17+($66(0%

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:

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,17(51$7,21

5(&7,),(5

/2*

2

$66(0%/ /27&2'

$

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(

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

3$57180%(5

'$7

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&2'( <($5  :((. /,1

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 12/02

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