Datasheet irf2204 Datasheet

AUTOMOTIVE MOSFET

PD - 94434

IRF2204

Typical Applications

● Electric Power Steering

● 14 Volts Automotive Electrical Systems

HEXFET® Power MOSFET

D

V

= 40V

DSS

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

G

S

R

DS(on)

= 3.6mΩ

ID = 210A

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 150 A I

DM

PD @TC = 25°C Power Dissipation 330 W

V

GS

E

AS

I

AR

E

AR

T

J

T

STG

Pulsed Drain Current  850

Linear Derating Factor 2.2 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 460 mJ Avalanche Current See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy mJ Operating Junction and -55 to + 175 °C Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.45 Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient ––– 62

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IRF2204

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 2380 ––– VGS = 0V, VDS = 0V to 32V

oss

Drain-to-Source Breakdown Voltage 40 –– – –– – V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 3.0 3.6 mΩ VGS = 10V, ID = 130A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA Forward Transconductance 120 ––– ––– S VDS = 10V, ID = 130A

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200

VDS = 40V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge –– – 130 200 ID = 130A Gate-to-Source Charge ––– 35 52 nC VDS = 32V Gate-to-Drain ("Miller") Charge ––– 39 59 VGS = 10V Turn-On Delay Time ––– 15 ––– VDD = 20V Rise Time ––– 140 ––– ID = 130A Turn-Off Delay Time ––– 62 ––– RG = 2.5Ω

ns

Fall Time ––– 110 ––– VGS = 10V 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact Input Capacitance ––– 5890 ––– VGS = 0V Output Capacitance ––– 1570 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5 Output Capacitance ––– 8000 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Output Capacitance ––– 1370 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

210

850

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 130A, VGS = 0V  Reverse Recovery Time ––– 68 100 n s TJ = 25°C, IF = 130A Reverse RecoveryCharge ––– 120 180 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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D

S

IRF2204

10000

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

V , Drain-to-Source Voltage (V)

DS

4.5V

20µs PULSE WIDTH

°

T = 25 C

J

1000.00

)

Α

(

t

n

e

r

u C e

c

r

100.00

u

o S

-

o

t

-

n

i

a

r D

,

D

I

10.00

TJ = 25°C

V

= 25V

DS

20µs PULSE WIDTH

4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

TJ = 175°C

10000

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

V , Drain-to-Source Voltage (V)

DS

4.5V

20µs PULSE WIDTH T = 175 C

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

210A

I =

D

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

°

V =

°

10V

GS

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF2204

100000

10000

) F

p

(

e

c

n

a

t

i

1000

c

a

p

a C

, C

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss rss oss

= C

gs gd ds

+ C

C C

Coss

Crss

+ Cgd, C

gd

Ciss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

°

T = 175 C

J

10

°

T = 25 C

1

0.1

0.0 0.5 1.0 1.5 2.0 2.5

V ,Source-to-Drain Voltage (V)

SD

J

SD

I , Reverse D rain Current (A)

100

SHORTED

ds

V = 0 V

GS

12

I

=

130A

D

10

8

6

4

GS

2

V , Gate-to-Source Voltage (V)

0

0 30 60 90 120 150

Q , Tota l Ga te C h a rge (nC )

G

V = 32V

DS

V = 20V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA

) A

(

t

1000

n

e

r

u C e

c

r

u

100

o S

-

o

t

-

n

i

a

r

10

D ,

Tc = 25°C

D

I

Tj = 175°C Single Pulse

1

1 10 100

LIMITED BY RDS(on)

V

, Drain-toSource V oltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF2204

+

-

250

LIMITED BY PACKAGE

200

150

100

D

I , Drain Current (A)

50

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

1

R

V

DS

V

GS

R

G

D

D.U.T.

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DD

D = 0.50

thJC

Thermal Response (Z )

0.001

0.20

0.1

0.10

0.05

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

P

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF2204

A

15V

DRIVER

+

-

V

R

G

20V

V

DS

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

3mA

.3µF

D.U.T.

+

V

DS

-

DD

900

TOP

750

600

450

300

150

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( C)

BOTTOM

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

4.0

) V

(

3.5

e

g

a

t

l

o

3.0

V d

l

o

h

s

2.5

e

r

h

t e

t

a

2.0

G

)

h

t

( S

1.5

G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

ID = 250µA

I

D 52A 91A

130A

I

G

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

D

Fig 14. Threshold Voltage Vs. Temperature

6 www.irf.com

IRF2204

) A

(

t

n

e

r

u C e

h

c

n

a

l

a

v A

1000

Duty Cycle = Singl e Pulse

0.01

100

0.05

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

0.10

10

1

1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

500

TOP Single Pulse

)

J

400

m

( y

g

r

e

n

300

E e

h

c

n

a

l

200

a

v A

,

R A

100

E

0

25 50 75 100 125 150 175

BOTTOM 10% Duty Cycle ID = 210A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

Fig 16. Maximum Avalanche Energy

Vs. Temperature

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

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IRF2204

+

-

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

• I

controlled by Duty Factor "D"

SD

• D.U.T. - Device Under Test

G

V

DD

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 17. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

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TO-220AB Package Outline

A

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.29 (.405)

1 2 3

6.47 (.255)

6.10 (.240)

4

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

LEAD AS SIGN MENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

IRF2204

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

0.69 (.027)

0.36 (.014) M B A M

TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 0.06mH

J

= 130A. (See Figure 12).

AS

≤ 130A, di/dt ≤ 170A/µs, V

DD

≤ V

(BR)DSS

TJ ≤ 175°C.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

This product has been designed and qualified for the Automotive [Q101] market.

INTERNATIONAL RECTIFIER LOGO

ASSEMBLY LOT CODE

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C

oss

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

,

 Limited by T

avalanche performance.

Data and specifications subject to change without notice.

Qualification Standards can be found on IR’s Web site.

while V

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

PART NUMBER

IRF1010

9246

9B 1M

DATE CODE (YYWW) YY = YEAR WW = WEEK

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

DSS

.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/02

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