Page 1
PD -9.1353
PRELIMINARY
IRFI530N
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
V
= 100V
R
DS(on)
DSS
= 0.11Ω
ID = 11A
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design for which HEXFET Power MOSFETs are
well known, provides the designer with an extremely
efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 11
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 7.8 A
I
DM
PD @TC = 25°C Power Dissipation 33 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt Ġ 5.2 V/ns
T
J
T
STG
Pulsed Drain Current •† 60
Linear Derating Factor 0.22 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ‚† 150 mJ
Avalanche Current•† 9.0 A
Repetitive Avalanche Current•† 6.3 mJ
Operating Junction and -55 to + 175
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case –––– –––– 4.5
Junction-to-Ambient –––– –––– 65
Parameter Min. Typ. Max. Units
°C/W
Page 2
IRFI530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA†
J
Static Drain-to-Source On-Resistance ––– ––– 0.11 Ω VGS = 10V, ID = 6.6A „
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 6.4 ––– ––– S VDS = 50V, ID = 9.0A†
Drain-to-Source Leakage Current
––– ––– 25 VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
µA
nA
Total Gate Charge ––– ––– 44 ID = 9.0A
Gate-to-Source Charge ––– ––– 6.2 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13 „†
Turn-On Delay Time ––– 6.4 ––– VDD = 50V
Rise Time ––– 27 ––– ID = 9.0A
Turn-Off Delay Time ––– 37 ––– RG = 12Ω
ns
Fall Time ––– 25 ––– RD = 5.5Ω, See Fig. 10 „†
Internal Drain Inductance
Internal Source Inductance ––– –––
–––
–––
4.5
7.5
–––
–––
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 640 ––– VGS = 0V
Output Capacitance ––– 160 ––– VDS = 25V
Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5†
pF
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
• Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V
DD
RG = 25Ω, I
ƒ I
SD
TJ ≤ 175°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) •† p-n junction diode.
––– ––– 11
––– ––– 60
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V „
Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 9.0A
Reverse RecoveryCharge ––– 650 970 nC di/dt = 100A/µs
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
= 15V, starting TJ = 25°C, L = 3.1mH
= 9.0A. (See Figure 12)
AS
≤ 9.0A, di/dt ≤ 520A/µs, V
DD
≤ V
(BR)DSS
,
… t=60s, ƒ=60Hz
† Uses IRF530N data and test conditions
A
„†
Page 3
IRFI530N
A
A
A
A
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 25°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 175°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics,
TJ = 175oC
3.0
I = 15A
D
T = 25°C
J
T = 175°C
J
10
D
I , Drain-to-Source Current (A)
1
4 5 6 7 8 9 10
V , Gate-to-Source Voltage (V)
GS
V = 50V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V = 10V
GS
Page 4
IRFI530N
A
A
A
A
1200
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I = 9.0A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
V = 80V
DS
V = 50V
DS
V = 20V
DS
FOR T EST CIRCUIT
0
0 5 10 15 20 25 30 35 40 45
Q , Total Gate Charge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 175°C
J
10
SD
I , Reverse Drain Current (A)
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-to-Drain Voltage (V)
SD
T = 25°C
J
V = 0V
Fig 7. Typical Source-Drain Diode
Forward Voltage
GS
100
10µs
10
D
I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
1
1 10 100 1000
V , Drain-to-Source Voltage (V)
DS
100µs
1ms
10ms
Fig 8. Maximum Safe Operating Area
Page 5
IRFI530N
A
R
D.U.T.
D
V
DD
V
12
10
R
DS
V
GS
G
8
6
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
D
I , Drain Current (Amps)
2
0
25 50 75 100 125 150 175
T , Case Temperature (°C)
C
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
thJC
1
0.20
0.10
0.05
P
0.02
0.1
Thermal Response (Z )
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
N o tes :
1. Du ty fa cto r D = t / t
2. Pe ak T = P x Z + T
DM
J
D M
t
1
t
2
2
1
thJC
C
A
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Page 6
IRFI530N
A
10 V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
350
300
250
200
150
100
50
AS
V = 25V
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TOP 3.7A
6.4A
BOTTOM 9.0A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Page 7
IRFI530N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
ƒ
‚
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
„
•
R
G
• dv/dt controlled by R
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
G
V
DD
*
* V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
Page 8
IRFI530N
A
Package Outline — TO-220 Full-Pak
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
16.00 (.630)
15.80 (.622)
1 2 3
13.70 (.540)
13.50 (.530)
1.40 (.055)
3X
1.05 (.042)
2.54 (.100)
2X
3X
Part Marking Information
EXAMPLE : THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE E401
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
0.90 (.035)
0.70 (.028)
0.25 (.010)
3.40 (.133)
ø
3.10 (.123)
- A -
- B -
M
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
A M B
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
2.80 (.110)
2.60 (.102)
3X
2.85 (.112)
2.65 (.104)
IRFI840G
E401 9245
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
2 CONTROLLING DIMENSION: INCH.
0.48 (.019)
0.44 (.017)
A
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
C
D
B
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 4/96
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