Datasheet irf1405z Datasheet

PD - 94645

AUTOMOTIVE MOSFET

HEXFET® Power MOSFET

Features

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C ID @ TC = 100°C I

@ TC = 25°C

D

I

DM

PD @TC = 25°C

V

GS

E

AS (Thermally limited)

(Tested )

E

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V Continuous Drain Current, V Continuous Drain Current, V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche E nergy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw

c

c

@ 10V (Silicon Limited)

GS

@ 10V

GS

@ 10V (Package Limited)

GS

d

g

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.65 Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient ––– 62

G

h

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

IRF1405Z

D

V

DSS

R

DS(on)

S

Max.

150 110

600 230

1.5

± 20

270 420

-55 to + 175

y

in (1.1Nym)

10 lbf

75

ID = 75A

TO-220AB

= 55V

= 4.9mΩ

A

W

W/°C

V

mJ

A

mJ

°C

www.irf.com 1

03/27/03

IRF1405Z

/

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

gfs Forward Transconductance 88 ––– ––– S I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

C

oss

Drain-to-Source Breakdown Voltage 55 ––– ––– V

∆T

Breakdown Voltage Temp. Coeffi cient ––– 0.049 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 3.7 4.9 Gate Threshold Voltage 2.0 ––– 4.0 V

VGS = 0V, ID = 250µA Reference to 25°C, I

mΩ

V VDS = VGS, ID = 250µA V

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Total Gate Charge ––– 120 180 Gate-to-Source Charge ––– 31 ––– nC Gate-to-Drain ("Miller") Charge ––– 46 ––– Turn-On Delay Time ––– 18 ––– Rise Time ––– 110 ––– Turn-Off Delay Time ––– 48 ––– ns Fall Time ––– 82 –––

V V V V I V VGS = 10V VDD = 25V I R VGS = 10V

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductanc e ––– 7.5 ––– from package

and center of die contact

Input Capacitance ––– 4780 ––– Output Capacitance ––– 770 ––– Reverse Transfer Capacitance ––– 410 ––– pF Output Capacitance ––– 2730 ––– Output Capacitance ––– 600 ––– Effective Output Capacitance ––– 910 –––

VGS = 0V V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz V V

GS

DS DS DS GS GS

= 75A

D

DS

= 75A

D

G

DS

GS GS

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 75 (Body Diode) A

I

SM

V

SD

t

rr

Q

rr

t

on

Pulsed Source Current ––– ––– 600 (Body Diode)

c

Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 30 46 ns Reverse Recovery Charge ––– 30 45 nC Forward Turn-On Time

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.10mH

Jmax

= 75A, VGS =10V. Part not

AS

recommended for use above this value.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C

 Limited by T

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

MOSFET symbol showing the

integral reverse p-n junction diode.

T

= 25°C, IS = 75A, VGS = 0V

J

TJ = 25°C, IF = 75A, VDD = 25V di/dt = 100A/µs

2 www.irf.com

Conditions

= 1mA

D

= 10V, ID = 75A

e

= 25V, ID = 75A = 55V, VGS = 0V = 55V, VGS = 0V, TJ = 125°C = 20V = -20V

= 44V

e

= 4.4Ω

e

G

= 25V

= 0V, VDS = 44V, ƒ = 1.0MHz = 0V, VDS = 0V to 44V

f

Conditions

G

e

.

DSS

D

S

D

S

e

IRF1405Z

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

D

1000

100

10

TOP 15V

BOTTOM 4.5V

VGS 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH Tj = 25°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1000

) A

(

t

n

e

r

u C e

c

r

u

o S

-

o

t

-

n

i

a

r D

, I

D

1000

100

10

TOP 15V

BOTTOM 4.5V

VGS 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

200

)

175

)

Α

(

t

n

e

r

100

r

u C e

c

r

u

o S

-

o

t

-

n

10

i

a

r D

,

D

I

TJ = 25°C

V

DS

TJ = 150°C

= 25V

20µs PULSE WIDTH

1

4 6 8 10 12

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

S

( e

c

150

n

a

t

c

u

125

d

n

o

c

s

100

n

a

r T

d

75

r

a w

r

o

50

F

,

s

f

G

25

TJ = 25°C

TJ = 175°C

0

0 25 50 75 100 125 150 175 200

ID,Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

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IRF1405Z

100000

) F

10000

p

(

e

c

n

a

t

i

c

a

p

a C

,

1000

C

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss rss oss

= C

gs

gd

ds

C C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000.00

+ Cgd, C

+ C

gd

SHORTED

ds

C

iss

C

oss

C

rss

) V

( e

g

a

t

l

o V

e

c

r

u

o S

-

o

t

-

e

t

a G

,

S G

V

10000

12.0 ID= 75A

10.0

8.0

6.0

4.0

2.0

0.0 0 20 40 60 80 100 120

Q

VDS= 44V VDS= 28V

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

OPERATION IN THIS AREA

) A

(

t

100.00

n

e

r

u C n

i

a

r

10.00

D e

s

r

e

v

e R

,

1.00

D S

I

0.10

TJ = 175°C

TJ = 25°C

0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

GS

= 0V

) A

(

t

1000

n

e

r

u C e

c

r

u

100

o S

-

o

t

-

n

i

a

r D

10

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

1

1 10 100 1000

Fig 8. Maximum Safe Operating Area

LIMITED BY RDS(on)

100µsec

1msec 10msec

VDS, Drain-to-Source Voltage (V)

Forward Voltage

4 www.irf.com

IRF1405Z

150

125

) A

(

100

t

n

e

r

u C

75

n

i

a

r D

50

,

D

I

25

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Limited By Package

Fig 9. Maximum Drain Current vs.

Case Temperature

1

2.5

e

c

n

a

t

s

i

s

e R n O e

c

r

u

o S

-

o

t

-

n

i

a

r D

,

)

n

o

( S D

R

ID = 75A V

= 10V

GS

2.0

)

d

e

z

i

l

1.5

a m

r

o N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

)

C

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.001

D = 0.50

0.1

0.01

0.20

0.10

0.05

0.02

0.01 SINGLE PULSE

( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10

t1 , Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF1405Z

A

15V

DRIVER

+

-

V

DD

R

G

V

20V

V

DS

GS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

500

)

J m

( y

g

400

r

e

n E

e

h

c

300

n

a

l

a

v A

e

s

200

l

u P

e

l

g

n

i

100

S

,

S A

E

0

25 50 75 100 125 150 175

TOP 31A

BOTTOM 75A

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

4.0

I

D

53A

) V

(

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

3.5

e

g

a

t

l

o

3.0

V d

l

o

h

s

2.5

e

r

h

t e

t

a

2.0

G

)

h

t

( S

1.5

G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

IRF1405Z

10000

Duty Cycle = Single Pulse

1000

) A

(

t

n

e

r

u C

100

e

h

c

n

a

l

a

v A

10

0.01

0.05

0.10

1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

300

TOP Single Pulse

250

)

J m

( y

g

200

r

e

n E

e

h

150

c

n

a

l

a

v

100

A

,

R A

E

50

0

25 50 75 100 125 150 175

BOTTOM 10% Duty Cycle ID = 75A

Starting TJ , Junction Temperature (°C)

Fig 16. Maximum Avalanche Energy

vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

·f

av

D (ave)·tav

thJC

www.irf.com 7

is

IRF1405Z





Reverse Recovery Current

Driver Gate Drive

P.W.

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

+

V

DD

Re-Applied Voltage

+

-

Period

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P.W.

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

E

X

A

M

P

L

E

:

T

H

I

S

I

S

A

N

I

R

F

1

0

1

0

L

O

T

C

O

D

E

1

7

8

9

A

S

E

M

B

L

E

D

O

N

W

1

9

,

1

9

7

I

N

T

H

E

A

S

E

M

B

L

Y

L

I

N

E

"

C

"

I

N

T

E

R

N

A

T

I

O

N

A

L

R

E

C

T

I

F

I

E

R

L

O

G

O

A

S

E

M

B

L

Y

L

O

T

C

O

D

E

P

A

R

T

N

U

M

B

E

R

D

A

T

E

C

O

D

E

Y

E

A

R

7

=

1

9

7

W

E

K

1

9

L

I

N

E

C

Dimensions are shown in millimeters (inches)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.54 (.415)

10.29 (.405)

1 2 3

4

6.47 (.255)

6.10 (.240)

1.15 (.045 ) MIN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

IRF1405Z

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.93 (.037)

3X

1.40 (.055)

3X

1.15 (.045)

2.54 (.100 )

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

0.69 (.027)

0.36 (.014) M B A M

0.55 (.022 )

3X

0.46 (.018 )

2.92 (.115)

2.64 (.104)

TO-220AB Part Marking Information

TO-220AB packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 03/03

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