Datasheet irf1104s Datasheet

PD -91845

IRF1104S/L

HEXFET® Power MOSFET

l Advanced Process Technology

2

D Pak

D

R

DS(on)

V

DSS

= 40V

= 0.009Ω

ID = 100A

S

TO-262

°C

°C/W

l Ultra Low On-Resistance l Surface Mount (IRF1104S) l Low-profile through-hole (IRF1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

G

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

2

The D

Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D

2

Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1104L) is available for lowprofile applications.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 71 A I

DM

PD @TA = 25°C Power Dissipation 2.4 W PD @TC = 25°C Power Dissipation 170 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J

T

STG

Pulsed Drain Current  400

Linear Derating Factor 1.1 W/°C Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 350 mJ Avalanche Current 60 A Repetitive Avalanche Energy 17 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 0.9 Junction-to-Ambient(PCB Mounted,steady-state)** ––– 62

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11/20/98

IRF1104S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– –– – V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.009 Ω VGS = 10V, ID = 60A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 37 ––– ––– S VDS = 30V, ID = 60A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 40V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– ––– 9 3 ID = 60A Gate-to-Source Charge ––– ––– 29 nC VDS = 32V Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13  Turn-On Delay Time ––– 15 ––– VDD = 20V Rise Time ––– 114 ––– ID = 60A Turn-Off Delay Time ––– 28 ––– RG = 3.6Ω

ns

Fall Time ––– 19 ––– RD = 0.33Ω, See Fig. 10 

Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact Input Capacitance ––– 2900 ––– VGS = 0V Output Capacitance ––– 1100 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

100

400

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =60A, VGS = 0V  Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF =60A Reverse Recovery Charge ––– 188 280 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

= 25°C, L = 194µH

J

= 60A. (See Figure 12)

AS

≤ 60A, di/dt ≤ 304A/µs, V

DD

≤ V

(BR)DSS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.  Uses IRF1104 data and test conditions.

 Calculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the

,

package refer to Design Tip # 93-4

** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

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D

S

IRF1104S/L

1000

100

10

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

1000

J

1000

100

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 175 C

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

I =

D

100A

°

T = 175 C

J

100

10

°

T = 25 C

J

1

D

I , Drain-to-Source Current (A)

V = 50V

DS

0.1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF1104S/L

5000

4000

3000

2000

V

=

0V,

GS

C

=

C

iss gs gd , ds

C

=

C

rss gd

C

=

C

oss ds gd

C, Capacitance (pF)

1000

0

1 10 100

V , Drain-to-Source Voltage (V)

DS

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

+ C + C

C

iss

oss

rss

f = 1MHz

C SHORTED

20

I =

60A

D

15

10

5

GS

V , Gate-to-Source Voltage (V)

0

0 25 50 75 100

Q , Total Gate Charge (nC)

G

V = 32V

DS

V = 20V

DS

FOR TEST CIRCUIT

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

10000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.8 1.4 2.0 2.6

°

T = 175 C

J

°

T = 25 C

J

V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

1000

100

D

I , Drain Current (A)I , Drain Current (A)

10

°

= 25 C

C

T T= 175 C Single Pulse

1

1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

10us

100us

1ms

10ms

Forward Voltage

4 www.irf.com

100

LIMITED BY PACKAGE

80

60

40

D

I , Drain Current (A)

20

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF1104S/L

R

D.U.T.

t

d(off)tf

D

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

+

V

DD

-

1

D = 0.50

thJC

0.20

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1104S/L

A

15V

DRIVER

+

-

R

20V

V

DS

G

t

L

D.U.T

I

AS

0.01

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

800

TOP

I

D 24A 42A

600

BOTTOM

400

V

DD

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J

60A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

-

D

Fig 13b. Gate Charge Test Circuit

V

DS

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IRF1104S/L

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-



-

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P.W.

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRF1104S/L

A

D2Pak Package Details

10.54 (.415)

1.40 (.055) MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTES: 1 D IMENS IO NS AFTER S OLDER D IP . 2 DIMENS IONING & TOLE RA N C ING PER A N S I Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMEN SIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.010) M B A M

Part Marking

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - S OU RCE

10.16 (.400) REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INTERNATIONAL R EC T IF IER L O GO

A S SE MB LY L O T CO DE

F530S

9246

9 B 1 M

PART NUMBER

DATE CODE (YYWW) YY = YEAR WW = WEEK

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TO-262 Package Details

IRF1104S/L

Part Marking

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IRF1104S/L

D2Pak Tape and Reel

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.06 3)

1.50 (.05 9)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. CO M F O R M S TO E IA - 4 1 8.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069 )

1.25 (.049 )

16.10 (.634)

15.90 (.626)

15.42 (.609 )

15.22 (.601 )

27 .4 0 ( 1.07 9 )

23.90 (.941) 4

26.40 (1.039)

24.40 (.961)

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362) M IN .

30.40 (1.197) MAX .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 11/98

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