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PD - 94966
IRF1010NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
D
V
R
DS(on)
= 55V
DSS
= 11mΩ
ID = 85A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A
I
DM
PD @TC = 25°C Power Dissipation 180 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
T
J
T
STG
Pulsed Drain Current 290
Linear Derating Factor 1.2 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 43 A
Repetitive Avalanche Energy 18 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 0.85
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRF1010NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 43A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 120 ID = 43A
Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 28V
Rise Time ––– 76 ––– ID = 43A
Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω
ns
Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3210 ––– VGS = 0V
Output Capacitance ––– 690 ––– VDS = 25V
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1030250 mJ I
= 4.3A, L = 270µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
85
290
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A
Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
= 25°C, L = 270µH
J
= 43A, VGS=10V (See Figure 12)
AS
≤ 43A, di/dt ≤ 210A/µs, V
SD
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
DD
≤ V
(BR)DSS
= 175°C .
J
,
I
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
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D
S
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IRF1010NPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
100
T = 25 C
J
J
°
T = 175 C
J
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 175 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
2.0
°
I =
D
85A
1.5
10
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF1010NPbF
20
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
I =
D
43A
V = 44V
DS
V = 27V
DS
V = 11V
DS
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
6000
5000
4000
3000
2000
1000
Ciss
Coss
Crss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
SHORTED
ds
FOR TEST CIRCUIT
0
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
0
0 20 40 60 80 100 120
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
13
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
°
T = 175 C
J
10
1
SD
I , Reverse Drain Current (A)
0.1
0.0 0.6 1.2 1.8 2.4
V ,Source-to-Drain Voltage (V)
SD
°
T = 25 C
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
)
A
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF1010NPbF
100
LIMITED BY PACKAGE
80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
D = 0.50
thJC
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1010NPbF
A
15V
DRIVER
+
V
DD
-
R
V
20V
V
DS
G
GS
L
D.U.T
I
AS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
500
TOP
400
300
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
I
°
D
18A
30A
43A
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
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+
V
DS
-
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IRF1010NPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P. W .
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
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IRF1010NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (. 113)
2.62 (. 103)
15.24 (.600)
14.84 (.584)
14.09 (. 555)
13.47 (. 530)
10.54 (.415)
10.29 (.405)
1 2 3
3.78 (.1 49)
3.54 (.1 39)
- A -
6.47 (.255)
6.10 (.240)
4
1.15 (.0 45)
MIN
4.06 ( .160)
3.55 ( .140)
4.69 (.1 85)
4.20 (.1 65)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSI GNMENTS
LEAD ASSIGNMENTS
HEXFET
1 - GAT E
2 - DRA IN
1- GATE
3 - SOU RCE
2- DRAIN
3- S OURCE
4 - DRA IN
4- DRAIN
IGBTs, C oPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
0.93 (. 037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.1 00)
NOTES:
1 DIMENSION ING & TOLER ANC ING PER AN SI Y14 .5M, 1982. 3 OUTLIN E CONFO RMS TO J EDE C OUTLINE TO -220AB .
2 CONTROL LING D IMENSION : INC H 4 HEA TSINK & LEAD ME ASUREME NTS DO NOT INCLUDE BURRS.
2X
0.69 (. 027)
0.36 (.014) M B A M
0.55 (. 022)
3X
0.46 (. 018)
2.92 (. 115)
2.64 (. 104)
TO-220AB Part Marking Information
EXAMPLE:
T HIS IS AN IRF 1010
LOT CODE 1789
ASS EMBL E D ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E RN ATIONAL
RE CT IFIE R
LOGO
AS SE MB LY
LOT CODE
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
PAR T NU MBE R
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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