operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n Gate drive supply range from 10 to 20V
Product Summary
V
OFFSET
IO+/-2A / 2A
V
OUT
t
(typ.)120 & 94 ns
on/off
Delay Matching10 ns
400V max.
10 - 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V
Logic and power ground ±5V offset
n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs
Description
The IR2110L4 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up
to 400 volts.
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.
SymbolParameterMin.Max.Units
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dVs/dtAllowable Offset Supply Voltage Transient (Figure 2)—50V/ns
P
D
R
thJA
T
J
T
S
T
L
High Side Floating Supply Voltage-0.5VS + 20
High Side Floating Supply Offset Voltage—4 00
High Side Floating Output VoltageVS - 0.5V
Low Side Fixed Supply Voltage-0.520
Low Side Output Voltage-0.5VCC + 0.5V
Logic Supply Voltage-0.5VSS + 20
Logic Supply Offset VoltageVCC - 20V
Logic Input Voltage (HIN, LIN & SD)VSS - 0.5V
Package Power Dissipation @ TA £ +25°C—1.6W
Thermal Resistance, Junction to Ambient—75°C/W
Junction Temperature-5 5125
Storage Temperature-55150°C
Lead Temperature (Soldering, 10 seconds)—300
Weight1.5 (typical)g
CC
DD
B
+ 0.5
+ 0.5
+ 0.5
2/14/97
Page 2
IR2110L4
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies
biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37.
SymbolParameterMin.Max.Units
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
Dynamic Electrical Characteristics
V
(VCC, VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical
BIAS
characteristics are measured using the test circuit shown in Figure 3.
(VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are refer-
BIAS
enced to VSS and are applicable to all three logic input pins: HIN, LIN and SD. The VO and IO parameters
are referenced to COM or VS and are applicable to the respective output pins: HO or LO.
Supply Undervoltage Negative7.08. 29.4——
Going Threshold
Output High Short Circuit Pulsed2.0————VO = 0V, VIN = V
CurrentAPW £ 10 µs
Output Low Short Circuit Pulsed2.0————VO = 15V, VIN = 0V
CurrentPW £ 10 µs
= 10V
DD
VDD = 15V
= 10V
DD
VDD = 15V
IN =VIH, IO
IN =VIH, IO
=0V or V
IN
=0V, or V
IN
=0V, or V
IN
= 0V
IN
= 0A
= 0A
DD
DD
DD
DD
DD
Page 4
IR2110L4
Figure 1. Input/Output Timing DiagramFigure 2. Floating Supply Voltage Transient T est Circuit
HV = 10 to 400V
50%
t
off
90%90%
t
(0 to 400V)
HIN
LIN
50%
t
on
t
r
HO
LO
Figure 3. Switching Time Test CircuitFigure 4. Switching Time Waveform Definition
HIN
LIN
SD
50%
t
sd
HO
90%
LO
Figure 5. Shutdown Waveform Definitions
Figure 6. Delay Matching Waveform Definitions
10%10%
50%50%
LO
MT
HO
10%
90%
f
MT
HOLO
Page 5
IR2110L4
250
200
150
Max.
Typ.
100
Turn-On Delay Time (ns)
50
0
-50-250255075100125
Temperature (°C)
250
200
Max.
Typ.
150
100
Turn-On Delay Time (ns)
50
0
101214161820
V
Supply Voltage (V)
BIAS
Figure 7A. Turn-On Time vs. TemperatureFigure 7B. Turn-On Time vs. Voltage
250
200
150
Max.
100
Typ.
Turn-Off Delay Time (ns)
50
250
200
Max.
150
Typ.
100
Turn-Off Delay Time (ns)
50
0
-50-250255075100125
Temperature (°C)
0
101214161820
V
Supply Voltage (V)
BIAS
Figure 8A. Turn-Off Time vs. TemperatureFigure 8B. Turn-Off Time vs. Voltage
250
200
150
Max.
100
Typ.
Shutdown Delay Time (ns)
50
0
-50-250255075100125
Temperature (°C)
Figure 9A. Shutdown Time vs. Temperature
250
200
Max.
150
Typ.
100
Shutdown Delay time (ns)
50
0
101214161820
V
Supply Voltage (V)
BIAS
Figure 9B. Shutdown Time vs. Voltage
Page 6
IR2110L4
100
80
60
40
Max.
Turn-On Rise Time (ns)
Typ.
20
0
-50-250255075100125
Temperature (°C)
Figure 10A. Turn-On Rise Time vs. Temperature
50
40
30
Max.
20
Typ.
Turn-Off Fall Time (ns)
10
100
80
60
Max.
40
Typ.
Turn-On Rise Time (ns)
20
0
101214161820
V
Supply Voltage (V)
BIAS
Figure 10B. Turn-On Rise Time vs. Voltage
50
40
30
20
Max.
Turn-Off Fall Time (ns)
Typ.
10
0
-50-250255075100125
Temperature (°C)
0
101214161820
V
Supply Voltage (V)
BIAS
Figure 11A. Turn-Off Fall Time vs. TemperatureFigure 11B. Turn-Off Fall Time vs. Voltage
15.0
12.0
Min.
9.0
6.0
Logic "1" Input Threshold (V)
3.0
0.0
-50-250255075100125
Temperature (°C)
15.0
12.0
9.0
6.0
Min.
Logic "1" Input Threshold (V)
3.0
0.0
57.51012.51517.520
V
Logic Supply Voltage (V)
DD
Figure 12A. Logic “1” Input Threshold vs. TemperatureFigure 12B. Logic “1” Input Threshold vs. Voltage
Page 7
IR2110L4
15.0
12.0
9.0
Max.
6.0
Logic "0" Input Threshold (V)
3.0
0.0
-50-250255075100125
Temperature (°C)
15.0
12.0
9.0
6.0
Logic "0" Input Threshold (V)
3.0
Max.
0.0
57.51012.51517.520
V
Logic Supply Voltage (V)
DD
Figure 13A. Logic “0” Input Threshold vs. TemperatureFigure 13B. Logic “0” Input Threshold vs. Voltage
5.00
4.00
3.00
2.00
Max.
High Level Output Voltage (V)
1.00
5.00
4.00
3.00
2.00
Max.
High Level Output Voltage (V)
1.00
0.00
-50-250255075100125
Temperature (°C)
0.00
101214161820
V
Supply Voltage (V)
BIAS
Figure 14A. High Level Output vs. TemperatureFigure 14B. High Level Output vs. Voltage
1.00
0.80
0.60
0.40
Low Level Output Voltage (V)
0.20
Max.
0.00
-50-250255075100125
Temperature (°C)
15.0
12.0
9.0
6.0
Min.
Logic "1" Input Threshold (V)
3.0
0.0
57.51012.51517.520
V
Logic Supply Voltage (V)
DD
Figure 15B. Low Level Output vs. VoltageFigure 15A. Low Level Output vs. Temperature
Page 8
IR2110L4
500
400
300
200
Offset Supply Leakage Current (µA)
100
Max.
0
-50-250255075100125
500
400
300
Max.
200
Supply Current (µA)
BS
V
Typ.
100
Temperature (°C)
500
400
300
200
Offset Supply Leakage Current (µA)
100
Max.
0
0100200300400500
V
Boost Voltage (V)
B
Figure 16B. Offset Supply Current vs. VoltageFigure 16A. Offset Supply Current vs. Temperature
500
400
300
200
Supply Current (µA)
BS
Max.
V
100
Typ.
0
-50-250255075100125
Figure 17A. V
625
500
375
Max.
250
Supply Current (µA)
CC
V
Typ.
125
0
-50-250255075100125
Figure 18A. V
Temperature (°C)
Supply Current vs. TemperatureFigure 17B. VBS Supply Current vs. Voltage
BS
Temperature (°C)
Supply Current vs. TemperatureFigure 18B. V
CC
0
101214161820
625
500
375
250
Supply Current (µA)
CC
Max.
V
125
Typ.
0
101214161820
V
Floating Supply Voltage (V)
BS
V
Fixed Supply Voltage (V)
CC
Supply Current vs. Voltage
CC
Page 9
IR2110L4
100
80
60
40
Supply Current (µA)
DD
V
Max.
20
Typ.
0
-50-250255075100125
Temperature (°C)
Figure 19A. VDD Supply Current vs. TemperatureFigure 19B. V
100
80
60
40
Max.
Logic "1" Input Bias Current (µA)
20
Typ.
0
-50-250255075100125
Temperature (°C)
100
80
60
40
Supply Current (µA)
DD
V
Max.
20
Typ.
0
57.51012.51517.520
V
Logic Supply Voltage (V)
DD
Supply Current vs. Voltage
DD
100
80
60
40
Logic "1" Input Bias Current (µA)
Max.
20
Typ.
0
57.51012.51517.520
V
Logic Supply Voltage (V)
DD
Figure 20A. Logic “1” Input Current vs. TemperatureFigure 20B. Logic “1” Input Current vs. Voltage
5.00
4.00
3.00
2.00
Logic "0" Input Bias Current (µA)
Max.
1.00
0.00
-50-250255075100125
Temperature (°C)
5.00
4.00
3.00
2.00
Max.
Logic "0" Input Bias Current (µA)
1.00
0.00
57.51012.51517.520
V
Logic Supply Voltage (V)
DD
Figure 21A. Logic “0” Input Current vs. TemperatureFigure 21B. Logic “0” Input Current vs. Voltage
Page 10
IR2110L4
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout + (V)
Min.
BS
V
7.0
6.0
-50-250255075100125
Temperature (°C)
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout - (V)
BS
V
7.0
Min.
6.0
-50-250255075100125
Temperature (°C)
Figure 22. VBS Undervoltage (+) vs. TemperatureFigure 23. VBS Undervoltage (-) vs. Temperature
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout + (V)
Min.
CC
V
7.0
11.0
10.0
Max.
9.0
Typ.
8.0
Undervoltage Lockout - (V)
CC
V
7.0
Min.
6.0
-50-250255075100125
Temperature (°C)
Figure 24. V
Undervoltage (+) vs. TemperatureFigure 25. VCC Undervoltage (-) vs. Temperature
CC
5.00
4.00
Typ.
3.00
Min.
2.00
Output Source Current (A)
1.00
0.00
-50-250255075100125
Temperature (°C)
6.0
-50-250255075100125
Temperature (°C)
5.00
4.00
3.00
2.00
Typ.
Output Source Current (A)
1.00
Min.
0.00
101214161820
V
Supply Voltage (V)
BIAS
Figure 26A. Output Source Current vs. TemperatureFigure 26B. Output Source Current vs. Voltage
Page 11
IR2110L4
5.00
4.00
Typ.
3.00
Min.
2.00
Output Sink Current (A)
1.00
0.00
-50-250255075100125
150
125
100
75
50
Junction Temperature (°C)
25
Temperature (°C)
320V
140V
10V
5.00
4.00
3.00
2.00
Typ.
Output Sink Current (A)
1.00
Min.
0.00
101214161820
V
Supply Voltage (V)
BIAS
Figure 27B. Output Sink Current vs. VoltageFigure 27A. Output Sink Current vs. Temperature
150
125
100
75
50
Junction Temperature (°C)
25
320V
140V
10V
0
1E+21E+31E+41E+51E+6
Frequency (Hz)
Figure 28. IR2110L6 TJ vs. Frequency (IRFBC20)
R
= 33W, VCC = 15V
GATE
150
125
100
75
50
Junction Temperature (°C)
25
0
1E+21E+31E+41E+51E+6
Figure 30. IR2110L6 T
R
Frequency (Hz)
vs. Frequency (IRFBC40)
J
= 15W, VCC = 15V
GATE
320V 140V
0
1E+21E+31E+41E+51E+6
Frequency (Hz)
Figure 29. IR2110L6 TJ vs. Frequency (IRFBC30)
R
= 22W, VCC = 15V
GATE
150
125
10V
100
75
50
Junction Temperature (°C)
25
0
1E+21E+31E+41E+51E+6
Figure 31. IR2110L6 T
R
Frequency (Hz)
vs. Frequency (IRFPE50)
J
= 10W, VCC = 15V
GATE
320V 140V
10V
Page 12
IR2110L4
150
125
100
75
50
Junction Temperature (°C)
25
0
1E+21E+31E+41E+51E+6
Frequency (Hz)
320V140V
Figure 32. IR2110L6S TJ vs. Frequency (IRFBC20)
= 33W, VCC = 15V
R
GATE
150
125
100
75
50
Junction Temperature (°C)
25
320V 140V
150
125
100
10V
10V
75
50
Junction Temperature (°C)
25
0
1E+21E+31E+41E+51E+6
Figure 33. IR2110L6S T
R
150
125
100
75
50
Junction Temperature (°C)
25
Frequency (Hz)
vs. Frequency (IRFBC30)
J
= 22W, VCC = 15V
GATE
320V 140V
10V
320V 140V 10 V
0
1E+21E+31E+41E+51E+6
Frequency (Hz)
Figure 34. IR2110L6S TJ vs. Frequency (IRFBC40)
R
= 15W, VCC = 15V
GATE
0.0
-2.0
Typ.
-4.0
-6.0
Offset Supply Voltage (V)
S
V
-8.0
-10.0
101214161820
Figure 36. Maximum V
V
Floating Supply Voltage (V)
BS
Negative Offset vs.
S
Supply Voltage
V
BS
0
1E+21E+31E+41E+51E+6
Frequency (Hz)
Figure 35. IR2110L6S TJ vs. Frequency (IRFPE50)
R
= 10W, VCC = 15V
GATE
20.0
16.0
12.0
8.0
Typ.
Logic Supply Offset Voltage (V)
SS
V
4.0
0.0
101214161820
Figure 37. Maximum V
V
Fixed Supply Voltage (V)
CC
Supply Voltage
V
CC
Positive Offset vs.
SS
Page 13
Functional Block Diagram
V
DD
RSQ
HIN
SD
LIN
RSQ
V
SS
VDD/V
LEVEL
SHIFT
VDD/V
LEVEL
SHIFT
IR2110L4
V
UV
DETECT
HV
LEVEL
CC
PULSE
GEN
CC
SHIFT
PULSE
FILTER
RQ
R
S
UV
DETECT
DELAY
B
HO
V
S
V
CC
LO
COM
Lead Definitions
Lead
SymbolDescription
V
DD
HINLogic input for high side gate driver output (HO), in phase
SDLogic input for shutdown
LINLogic input for low side gate driver output (LO), in phase
V
SS
V
B
HOHigh side gate drive output
V
S
V
CC
LOLow side gate drive output
COMLow side return
Logic supply
Logic ground
High side floating supply
High side floating supply return
Low side supply
Page 14
IR2110L4
Case Outline and Dimensions — MO-036AB
Pin Assignment
VSSLINSDHIN
CC
LO
V
COM
VSV
DD
V
B
HO
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/Data and specifications subject to change without notice.2/97
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