Datasheet IR2108 4-S Datasheet (IOR)

Data Sheet No. PD60161-R

(S) & (PbF)

Features

Floating channel designed for bootstrap operation

•

Fully operational to +600V

IR2108(4)

HALF-BRIDGE DRIVER

Packages

Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

•

Undervoltage lockout for both channels

•

3.3V, 5V and 15V input logic compatible

•

Cross-conduction prevention logic

•

Matched propagation delay for both channels

•

High side output in phase with HIN input

•

Low side output out of phase with

•

Logic and power ground +/- 5V offset.

•

Internal 540ns dead-time, and

•

LIN

input

programmable up to 5us with one external R Lower di/dt gate driver for better

•

resistor (IR21084)

DT

noise immunity

Available in Lead-Free

•

Description

The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune

8-Lead SOIC

IR2108S

8-Lead PDIP

IR2108

2106/2301//2108//2109/2302/2304 Feature Comparison

Part

2106/2301

21064

2108 Internal 540ns COM

21084

2109/2302 Internal 540ns COM

21094

2304

Input logic

HIN/LIN no none

HIN/LIN yes

IN/SD yes

HIN/LIN

Cross-

conduction

prevention

logic

yes

14-Lead SOIC

IR21084S

14-Lead PDIP

IR21084

Dead-Time Ground Pins

Programmable 0.54~5 µs

Internal 100ns

COM

VSS/COM

COM

CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Typical Connection

up to 600V

V

CC

V

CC

HIN

LIN

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

HIN

LIN

www.irf.com 1

B

HO

V

S

LOCOM

IR2108

V

HIN

LIN

V

TO

LOAD

up to 600V

HO

V

CC

SS

HIN

LIN

DT

V

R

DT

B

V

S

COM

SS

LO

IR21084

TO

LOAD

IR2108(4)

(S) & (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

DT Programmable dead-time pin voltage (IR21084 only) VSS - 0.3 V

V

IN

V

SS

dVS/dt Allowable offset supply voltage transient — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side floating absolute voltage -0.3 625

High side floating supply offset voltage VB - 25 VB + 0.3

High side floating output voltage VS - 0.3 V

B

+ 0.3

Low side and logic fixed supply voltage -0.3 25

Low side output voltage -0.3 VCC + 0.3

+ 0.3

CC

Logic input voltage (HIN & LIN)V

Logic ground (IR21084 only) V

- 0.3 V

SS

- 25 V

CC

+ 0.3

V

Package power dissipation @ TA ≤ +25°C (8 lead PDIP) — 1.0

(8 lead SOIC) — 0.625

(14 lead PDIP) — 1.6

W

(14 lead SOIC) — 1.0

Thermal resistance, junction to ambient (8 lead PDIP) — 125

(8 lead SOIC) — 200

(14 lead PDIP) — 75

°C/W

(14 lead SOIC) — 120

Junction temperature — 150

Storage temperature -50 150

°C

Lead temperature (soldering, 10 seconds) — 300

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

VB High side floating supply absolute voltage VS + 10 VS + 20

V

S

V

HO

V

CC

V

LO

V

IN

DT Programmable dead-time pin voltage (IR21084 only) V

V

SS

T

A

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).

2 www.irf.com

High side floating supply offset voltage Note 1 600

High side floating output voltage V

S

V

Low side and logic fixed supply voltage 10 20

Low side output voltage 0 V

Logic input voltage IR2108 COM V

IR21084 VSS V

SS

CC

V

CC

Logic ground (IR21084 only) -5 5

Ambient temperature -40 125

B

V

°C

IR2108(4)

(S) & (PbF)

Dynamic Electrical Characteristics

V

(VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified.

BIAS

Symbol Definition Min. Typ. Max. Units Test Conditions

t

on

t

off

MT Delay matching | ton - t

t

DT Deadtime: LO turn-off to HO turn-on(DT

MDT Deadtime matching = | DT

Turn-on propagation delay — 220 300 VS = 0V

Turn-off propagation delay — 200 280 VS = 0V or 600V

off

|

Turn-on rise time — 150 220 VS = 0V

r

Turn-off fall time — 50 80 VS = 0V

f

LO-HO) &

HO turn-off to LO turn-on (DT

LO-HO

- DT

HO-LO)

HO-LO

—0 30

nsec

400 540 680 RDT= 0 4 5 6 usec RDT = 200k (IR21084)

— 0 60 RDT=0

|

— 0 600 RDT = 200k (IR21084)

nsec

Static Electrical Characteristics

V

(VCC, VBS) = 15V, VSS = COM, DT= VSS and TA = 25°C unless otherwise specified. The VIL, VIH and I

BIAS

parameters are referenced to VSS/COM and are applicable to the respective input leads: HIN and LIN. The VO, IO and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.

Symbol Definition Min. Typ. Max. Units Test Conditions

V

IH

V

OH

V

OL

I

LK

I

QBS

I

QCC

I

IN+

I

IN-

V

CCUV+VCC

V

BSUV+

V

CCUV-

V

BSUV-

V

CCUVH

V

BSUVH

I

O+

I

O-

Logic “1” input voltage for HIN & logic “0” for LIN 2.9 — — VCC = 10V to 20V

Logic “0” input voltage for HIN & logic “1” for LIN — — 0.8 VCC = 10V to 20V

IL

High level output voltage, V

Low level output voltage, V

Offset supply leakage current — — 50 VB = VS = 600V

Quiescent VBS supply current 20 75 130 V

Quiescent VCC supply current 0.4 1.0 1.6 mA VIN = 0V or 5V

Logic “1” input bias current — 5 20 HIN = 5V, LIN = 0V

Logic “0” input bias current — — 2 HIN = 0V, LIN = 5V

and VBS supply undervoltage positive going 8.0 8.9 9.8

threshold

VCC and V

threshold

Hysteresis 0.3 0.7 —

Output high short circuit pulsed current 120 200 — VO = 0V,

Output low short circuit pulsed current 250 350 — VO = 15V,

supply undervoltage negative going 7.4 8.2 9.0

BS

BIAS

O

- V

O

— 0.8 1.4 IO = 20 mA

— 0.3 0.6 IO = 20 mA

V

µA

V

mA

IN

= 0V or 5V

IN

RDT=0

PW ≤ 10 µs

www.irf.com 3

IR2108(4)

(S) & (PbF)

Functional Block Diagram

2108

HIN

VSS/COM

LEVEL SHIFT

PULSE

GENERATOR

HV

LEVEL

SHIFTER

PULSE

FILTER

UV

DETECT

VB

R

Q

R

S

HO

VS

LIN

HIN

DT

LIN

DT

+5V

VSS

DEADTIME &

SHOOT-THROUGH

PREVENTION

21084

DEADTIME &

SHOOT-THROUGH

PREVENTION

VSS/COM

LEVEL SHIFT

VSS/COM

LEVEL

SHIFT

VSS/COM

LEVEL

SHIFT

PULSE

GENERATOR

DELAY

HV

LEVEL

SHIFTER

PULSE

FILTER

DETECT

UV

DETECT

VCC

UV

LO

COM

VB

R

Q

R

S

HO

VS

VCC

UV

LO

COM

VSS

4 www.irf.com

IR2108(4)

(S) & (PbF)

Lead Definitions

Symbol Description

HIN Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2108 and

VSS for IR21084)

LIN

DT Programmable dead-time lead, referenced to VSS. (IR21084 only)

VSS Logic Ground (21084 only)

V

B

HO High side gate driver output

V

S

V

CC

LO Low side gate driver output

COM Low side return

Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2108

and VSS for IR21084)

High side floating supply

High side floating supply return

Low side and logic fixed supply

Lead Assignments

V

1

CC

HIN

2

LIN

3

COM

4

V

HO

V

LO

8

B

7

6

S

5

V

1

CC

HIN

2

LIN

3

COM

4

8 Lead PDIP 8 Lead SOIC

IR2108 IR2108S

V

HO

V

14

13

B

12

11

S

10

9

8

V

1

CC

HIN

2

LIN

3

DT

4

VSS

5

COM

6

LO

7

14 Lead PDIP 14 Lead SOIC

V

1

CC

HIN

2

LIN

3

DT

4

VSS

5

COM

6

LO

7

IR21084 IR21084S

V

HO

V

LO

V

HO

V

8

B

7

6

S

5

14

13

B

12

11

S

10

9

8

www.irf.com 5

IR2108(4)

HIN

LIN

(S) & (PbF)

HO

LO

Figure 1. Input/Output Timing Diagram

HIN LIN

50% 50%

90%

LIN

50%

t

off

90% 90%

50%

LO

50%

t

on

t

r

10% 10%

50%

HIN

t

on

t

r

90% 90%

HO

10% 10%

Figure 2. Switching Time Waveform Definitions

t

off

t

f

t

f

HO

LO

DT

LO-HO

MDT=

90%

DT

10%

LO-HO

- DT

DT

HO-LO

10%

Figure 3. Deadtime Waveform Definitions

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IR2108(4)

)

(S) & (PbF)

500

400

300

Max .

200

Typ.

100

0

Turn-on Propagation Delay (ns

-50 -25 0 25 50 75 100 125

Temperature (

o

C)

Figure 4A. Turn-on Propagation De lay

vs. Tempe ratur e

500

400

Max.

300

Typ.

200

100

0

Turn-on Propagation Delay (ns

10 12 14 16 18 20

V

Supply Voltage (V)

BIAS

Figure 4B. Turn-on Propagation Delay

vs. Supply Voltage

500

400

300

Max.

200

Typ.

100

Turn-off Propagation Delay (ns)

0

-50 -25 0 25 50 75 100 125

Temperature (

o

C)

Figure 5A. Turn-off Propagation Delay

vs.Temperature

400

Max.

300

Typ.

200

100

0

Turn-off Propagation Delay (ns)

10 12 14 16 18 20

V

Supply V oltage (V )

BIAS

Figure 5B. Turn-off Propagation Delay

vs. Supp ly Voltage

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IR2108(4)

)

(S) & (PbF)

500

400

300

Max.

200

100

Turn-on Rise Time (ns

Typ.

0

-50 -25 0 25 50 75 100 125

Temperature (

o

C)

Figure 6A.Turn-on Rise Time

vs. Tem pe ratur e

200

500

400

300

Max .

200

Typ.

100

Turn-on Rise Time (ns

0

10 12 14 16 18 20

V

Supply Voltage (V)

BIAS

Figure 6B. Turn-on Rise Time

vs. Supply Voltage

200

150

100

Max.

50

Turn-off Fall Time (ns)

Typ.

0

-50 -25 0 25 50 75 100 125

Temperature (

Figure 7A. Turn-off Fall Tim e

vs. Tem perature

o

C)

150

Max .

100

50

Turn-off Fall Time (ns)

Typ.

0

10 12 14 16 18 20

Supply Voltage (V)

V

BIAS

Figure 7B. Turn-off Fall Time

vs. Supply Voltage

8 www.irf.com

IR2108(4)

(S) & (PbF)

1000

800

Max .

600

Typ.

Deadtime (ns)

400

Mi n.

200

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 8A. Deadtim e vs . Te m perature

7

6

5

Max.

4

3

Deadtime ( s)

2

1

0

0 50 100 150 200

R

(KΩ)

DT

Typ.

Mi n.

1000

800

Max.

Typ.

600

Deadtime (ns)

Min .

400

200

10 12 14 16 18 20

V

Supply Voltage (V)

BIAS

Figure 8B. Deadtime vs. Supply Voltage

8

7

6

5

4

Max.

3

2

Input Voltage (V)

1

0

-50 -25 0 25 50 75 100 125

Temperature (

o

C)

Figure 8C. Deadtim e vs. R

(IR21084 Only)

DT

Figure 9A. Logic "1" Input Voltage

vs. Tem pe ratur e

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IR2108(4)

(S) & (PbF)

8

7

6

5

4

Max.

3

2

Input Voltage (V)

1

0

10 12 14 16 18 20

V

Supply Voltage (V)

CC

Figure 9B. Logic "1" Input Voltage

vs. Supply Voltage

4.0

3.2

2.4

1.6

Input Voltage (V)

0.8

Min .

0.0

-50 -25 0 25 50 75 100 125

Temperature (

o

Figure 10A. Logic "0" Input Voltage

vs. Tem pe ratur e

4

C)

3.2

3

2.4

2

1.6

Min .

Input Voltage (V)

0.8

0.0 10 12 14 16 18 20

V

Supply Voltage (V)

CC

Figure 10B. Logic "0" Input Voltage

vs. Supply Voltage

Max.

1

Typ.

High Level Output Voltage (V)

0

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 11A. High Level Output

vs. Tem peratur e

10 www.irf.com

IR2108(4)

)

(S) & (PbF)

4

3

2

Max .

1

Typ.

High Level Output Voltage (V

0

10 12 14 16 18 20

V

Supply Voltage (V)

CC

Figure 11B. High Level Output

vs. Supply Voltage

1.5

1.2

0.9

0.6

Max.

0.3

Typ.

Low Level Output Voltage (V)

0

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 12A. Low Level Output

vs. T e m peratur e

500

1.2

0.9

Max.

0.6

Typ.

0.3

Low Level Output Voltage (V)

0

10 12 14 16 18 20

V

Supply Voltage (V)

CC

Figure 12B. Low Level Output

vs. Supply Voltage

400

300

200

100

Max.

0

Offset Supply Leakage Current ( A)

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 13A. Offset Supply Leakage Current

vs. Temperature

www.irf.com 11

IR2108(4)

(S) & (PbF)

500

400

300

200

100

Max.

0

Offset Supply Leakage Current ( A)

0 100 200 300 400 500 600

V

Boost Voltage (V )

B

Figure 13B. Offset Supply Leakage Curre nt

vs. Tem pe ratur e

400

300

200

Supply Current ( A)

V

Max .

100

BS

Typ.

Mi n .

0

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 14A. VBS Supply Current

vs. Tem pe ratur e

3.0

300

2.5

2.0

Max.

200

Max.

Supply Current ( A)

100

BS

Typ.

V

Mi n .

0

10 12 14 16 18 20

Supply Voltage (V)

V

BS

Figure 14B. VBS Supply Current

vs. Supply Voltage

1.5

Typ.

1.0

Min .

0.5

Vcc Supply Current (mA)

0.0

-50 -25 0 25 50 75 100 125

Temperature (

o

C)

Figure 15A. VCC Supply Current

vs. Tempe ratur e

12 www.irf.com

IR2108(4)

(S) & (PbF)

3.0

2.5

2.0

1.5

Max.

1.0

Supply Current (mA)

V

Typ.

CC

0.5

Min .

0.0 10 12 14 16 18 20

Supply Voltage (V)

V

CC

Figure 15B. VCC Supply Current

vs. Supply Voltage

60

50

40

30

20

Max.

10

Logic "1" Input Current ( A)

Typ.

0

-50 -25 0 25 50 75 100 125

Temperature (

o

C)

Figure 16A. Logic "1" Input Current

vs. Tem perature

5

50

40

30

Max.

20

10

Logic "1" Input Current ( A)

Typ.

0

10 12 14 16 18 20

Supply Voltage (V )

V

CC

Figure 16B. Logic "1" Input Current

vs. Supply Voltage

4

3

Max.

2

1

Logic "0" Input Current ( A)

0

-50 -25 0 25 50 75 100 125

Temperatur e (

o

C)

Figure 17A. Logic "0" Input Current

vs. Tem pe r atur e

www.irf.com 13

IR2108(4)

(S) & (PbF)

5

4

3

Max.

2

1

Logic "0" Input Current ( A)

0

10 12 14 16 18 20

Supply Voltage (V)

V

CC

Figure 17B. Logic "0" Input Current

vs. Supply Voltage

11

12

11

10

Max.

Typ.

9

UVLO Threshold (+) (V)

CC

V

Mi n.

8

7

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 18. VCC Undervoltage Threshold (+)

vs. Te m pe ratur e

12

10

Max .

9

Typ.

8

Mi n.

7

VCC UVLO Threshold (-) (V)

6

-50-250 255075100125

Temperature (

o

C)

Figure 19. VCC Undervoltage Threshold (-)

vs. Tempe ratur e

11

10

Max.

Typ.

9

UVLO Threshold (+) (V)

V

Min .

8

BS

7

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 20. VBS Undervoltage Threshold (+)

vs. Te m pe ratur e

14 www.irf.com

IR2108(4)

)

(S) & (PbF)

11

10

Max.

9

Typ.

8

Min.

7

UVLO Threshold (-) (V)

BS

V

6

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 21. VBS Undervoltage Threshold (-)

vs. Tempe rature

500

400

300

Typ.

200

Min .

100

Output Source Current ( A)

0

-50 -25 0 25 50 75 100 125

o

Temperature (

C)

Figure 22A. Output Source Current

vs. Temperature

600

400

500

Typ.

400

300

200

Typ.

Output Source Current ( A)

100

Min .

Output Sink Current (mA

0

10 12 14 16 18 20

Supply Voltage (V)

V

BIAS

Figure 22B. Output Source Current

vs. Supply Voltage

www.irf.com 15

Min .

300

200

100

0

-50 -25 0 25 50 75 100 125

Temperature (

o

C)

Figure 23A. Output Sink Current

vs. Te m perature

IR2108(4)

(S) & (PbF)

600

500

400

300

Typ.

200

Min.

100

Output Sink Current ( A)

0

10 12 14 16 18 20

V

Supply Voltage (V)

BIAS

Figure 23B. Output Sink Curr ent

vs. Supply Vo ltage

0

-2

Typ.

-4

-6

-8

Offset Supply Voltage (V)

S

V

-10 10 12 14 16 18 20

V

Flouting Supply Voltage (V)

BS

Figure 24. Maximum Vs Ne g ative Off s et

vs. Supply Voltage

140

120

C)

o

100

80

60

Temprature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 25. IR2108 vs. Fre quency (IRFBC20),

=33:, VCC=15V

R

gate

140V

70V

0V

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Fig ure 26. IR2108 vs. Fr equency ( IRFB C30),

R

=22:, VCC=15V

gate

140V

70V

0V

16 www.irf.com

IR2108(4)

(S) & (PbF)

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 27. IR2108 vs. Freque ncy (IRFBC40),

=15:, VCC=15V

R

gate

140

140V

70V

0V

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 28. IR2108 vs. Fre quency (IRFPE50),

=10:, VCC=15V

R

gate

140

1 40V 70 V

0V

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 29. IR21084 vs. Frequency (IRFBC20),

R

=33:, VCC=15V

gate

140V

70V

0V

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 30. IR21084 vs. Fre quency (IRFBC30),

=22:, VCC=15V

R

gate

1 40V

70V

0V

www.irf.com 17

IR2108(4)

g

0V

(S) & (PbF)

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 31. IR21084 vs. Fre quency (IRFBC40),

=15:, VCC=15V

R

gate

140V

70V

0V

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 32. IR21084 vs. Frequency (IRFPE50),

R

=10:, VCC=15V

ate

1 4

70V

0V

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 33. IR2108S vs. Freque ncy ( IRFBC20),

=33:, VCC=15V

R

gate

1 40V

70V

0V

140

120

C)

100

o

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 34. IR2108S vs. Frequency ( IRFBC30),

=22:, VCC=15V

R

gate

140V

70V

0V

18 www.irf.com

IR2108(4)

g

(S) & (PbF)

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 35. IR2108S vs. Frequency ( IRFBC40),

=15:, VCC=15V

R

gate

140

140V 70V

0V

140

120

C)

o

100

80

60

Tempreture (

40

20

1 10 100 1000

Frequency (KHz )

Figure 36. IR2108S vs. Frequency

(IRFPE50), R

=10:, VCC=15V

ate

140

140V 70V 0V

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 37. IR21084S vs. Frequency (IRFBC20),

R

=33:, VCC=15V

gate

140V 70V 0V

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figu re 38. IR21084S vs. Freq uency (IRF BC30),

R

=22:, VCC=15V

gate

140V

70V

0V

www.irf.com 19

IR2108(4)

0V

(S) & (PbF)

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 39. IR21084S vs. Freque ncy ( IRFBC40),

=15:, VCC=15V

R

gate

1 40V

70V

0V

140

120

C)

o

100

80

60

Temperature (

40

20

1 10 100 1000

Frequency (KHz)

Figure 40. IR21084S vs. Frequency ( IRFPE50),

R

=10:, VCC=15V

gate

1 40V 7

0V

20 www.irf.com

Case outlines

IR2108(4)

(S) & (PbF)

A

87

6

E

e

6X

8X b

0.25 [.010] C A B

NOT ES :

1. DIMENS IONING & TOLER ANCING PER ASME Y14.5M-1994.

2. CONT ROLL ING DIME NSI ON: MIL LIME TE R

3. DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHES ].

4. OUT LINE CONFORMS T O JEDE C OUTL INE MS-012AA.

D B

5

65

4312

e1

A1

H

0.25 [.010] A

A

C

0.10 [ .004]

8-Lead PDIP

6.46 [.255]

3X 1.27 [.050]

y

8-Lead SOIC

01-3003 01

DIM

FOOTPRINT

8X 0.72 [.028]

8X 1.78 [.070]

MIN MAX

A

.0532

A1

b

c .0075 .00 98 0.19 0.25

D

E

e

e1

H

K

L

y

.0688

.0040

.0098

.013

.020

.189

.1968

.1497

.1574

.050 B AS IC

.025 B AS IC 0. 635 BAS IC

.2284

.2440

.0099

.0196

.016

.050

0°

8°

K x 45°

8X L

8X c

7

5 DIME NSI ON DOES NOT INCL UDE MOLD P ROTR US IONS. MOLD PROTRU SIONS NOT T O EXCEED 0.15 [.006].

6 DIME NSI ON DOES NOT INCL UDE MOLD P ROTR US IONS. MOLD PROTRU SIONS NOT T O EXCEED 0.25 [.010].

7 DIME NSI ON IS T HE LE NGT H OF L EAD FOR S OLDE RING T O A S UBS TRATE .

01-0021 11

01-6014

(MS-001AB)

MILLIMETERSINCHE S

MIN MAX

1.35

1.75

0.10

0.25

0.33

0.51

4.80

5.00

3.80

4.00

1.27 B ASIC

5.80

6.20

0.25

0.50

0.40

1.27

8°

0°

01-6027

(MS-012AA)

www.irf.com 21

IR2108(4)

(S) & (PbF)

14-Lead PDIP

01-3002 03

01-6010

(MS-001AC)

14-Lead SOIC (narrow body)

22 www.irf.com

01-3063 00

01-6019

(MS-012AB)

IR2108(4)

P

C

(S) & (PbF)

ORDER INFORMATION

Basic Part (Non-Lead Free) Lead-Free Part

8-Lead PDIP IR2108 order IR2108 8-Lead PDIP IR2108 order IR2108PbF 8-Lead SOIC IR2108S order IR2108S 8-Lead SOIC IR2108S order IR2108SPbF 14-Lead PDI 14-Lead SOI

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

www.irf.com 23

IR21084 order IR21084 14-Lead PDIP IR21084 order IR21084PbF IR21084S order IR21084S 14-Lead SOICIR21084S order IR21084SPbF

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Website.

Data and specifications subject to change without notice.

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.09/08/04