Page 1
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Data Sheet
Rev. 2.0, 2011-03-15
Final
Industrial & Multimarket
Page 2
drain
pin 2
gate
pin 1
source
pin 3
650V CoolMOS™ C6 Power Transistor IPW65R070C6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by Infineon
Technologies. CoolMOS™ C6 series combines the experience of the leading SJ
MOSFET supplier with high class innovation. The offered devices provide all
benefits of a fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching applications
even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM R
dson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
1)
• Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for
e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter Value Unit Related Links
V
@ T
DS
R
DS(on),max
Q
I
D,pulse
E
oss
Body diode d
j,max
g,typ
@ 400V 13 µJ
i/dt 300 A/µs
700 V IFX CoolMOS Webpage
0.07 IFX Design tools
170 nC
150 A
Type Package Marking
IPW65R070C6 PG-TO247 65C6070
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.0, 2011-03-15
Page 3
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet 3 Rev. 2.0, 2011-03-15
Page 4
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse E
Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns V
Gate source voltage V
Power dissipation P
Operating and storage temperature T
Mounting torque - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
3)
speed
1) Limited by T
2) Pulse width tp limited by T
j,max.
3) Identical low side and high side switch with identical R
1)
2)
2)
3)
I
D
I
D,pulse
AS
AR
AR
GS
tot
j,Tstg
S
I
S,pulse
dv/dt - - 15 V/ns VDS=0...400 V, I
dif/dt - - 300 A/µs
Maximum duty cycle D=0.75
j,max
--53.5 ATC= 25 °C
33.8 T
= 100°C
C
--150 ATC=25 °C
- - 1160 mJ ID=9.3 A,VDD=50 V
- - 1.76 ID=9.3 A,VDD=50 V
--9.3 A
=0...480 V
DS
-20 - 20 V static
-30 30 AC (f>1 Hz)
--391 WTC=25 °C
-55 - 150 °C
--46.3 ATC=25 °C
--150 ATC=25 °C
SD
T
=25 °C
j
; V
G
peak<V(BR)DSS
; Tj<T
j.max
I
,
D
3 Thermal characteristics
Table 3 Thermal characteristics TO-247
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case
Thermal resistance, junction -
R
thJC
R
thJA
- - 0.32 °C/W
- - 62 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Final Data Sheet 4 Rev. 2.0, 2011-03-15
Test Condition
from case for 10 s
Page 5
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Electrical characteristics
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 4 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
650 - - V VGS=0 V, ID=1.0 mA
2.5 3 3.5 VDS=VGS, ID=1.76 mA
-- 1µAVDS=650 V, VGS=0 V,
T
=25 °C
j
-50-
V
=650 V, VGS=0 V,
DS
T
=150 °C
j
- - 100 nA VGS=20 V, VDS=0 V
- 0.063 0.07 VGS=10 V, ID=17.6 A,
T
=25 °C
j
-0.164-
V
=10 V, ID=17.6 A,
GS
T
=150 °C
j
-0.85- f=1 MHz, open drain
Table 5 Dynamic characteristics
Parameter Symbol Values Unit Note /
Test Condition
f=1 MHz
V
=0...480 V
DS
V
=0...480V
DS
V
=13 V, ID=26.3 A,
GS
R
=1.8
G
Input capacitance
Output capacitance
Effective output capacitance,
energy related
1)
Effective output capacitance, time
related
2)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
1) C
2) C
is a fixed capacitance that gives the same stored energy as C
o(er)
is a fixed capacitance that gives the same charging time as C
o(tr)
C
C
C
C
t
d(on)
t
r
t
d(off)
t
f
iss
oss
o(er)
o(tr)
Min. Typ. Max.
-3900- pFVGS=0 V, VDS=100 V,
-215-
-140- VGS=0 V,
-670- ID=constant, VGS=0 V
-17- nsVDD=400 V,
-17-
-90-
-6-
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
(BR)DSS
(BR)DSS
Final Data Sheet 5 Rev. 2.0, 2011-03-15
Page 6
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Electrical characteristics
Table 6 Gate charge characteristics
Parameter Symbol Values Unit Note /
Test Condition
=26.3 A,
I
D
V
=0 to 10 V
GS
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
plateau
Min. Typ. Max.
gs
gd
g
-20- nCVDD=480 V,
-85-
-170-
-5.5- V
Table 7 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Test Condition
T
=25 °C
j
d
i
/dt=100 A/µs
F
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Min. Typ. Max.
V
SD
t
rr
Q
rr
I
rrm
-0.9- VVGS=0 V, IF=26.3 A,
-730- nsVR=400 V, IF=26.3 A,
-19- µC
-50- A
Final Data Sheet 6 Rev. 2.0, 2011-03-15
Page 7
650V CoolMOS™ C6 Power Transistor
Electrical characteristics diagrams
5 Electrical characteristics diagrams
Table 8
Power dissipation Max. transient thermal impedance
IPW65R070C6
P
= f(TC) Z
tot
Table 9
Safe operating area
T
=25 °C Safe operating area TC=80 °C
C
=f(tp); parameter: D=tp/T
(thJC)
I
=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter t
D
p
I
=f(VDS); TC=80°C; VGS > 7V; D=0; parameter t
D
p
Final Data Sheet 7 Rev. 2.0, 2011-03-15
Page 8
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Table 10
Typ. output characteristics T
Electrical characteristics diagrams
=25 °C Typ. output characteristics Tj=125 °C
j
I
=f(VDS); Tj=25 °C; parameter: V
D
GS
ID=f(VDS); Tj=125 °C; parameter: V
Table 11
Typ. drain-source on-state resistance Drain-source on-state resistance
GS
R
=f(ID); Tj=125 °C; parameter: V
DS(on)
GS
R
=f(Tj); ID=17.6 A; VGS=10 V
DS(on)
Final Data Sheet 8 Rev. 2.0, 2011-03-15
Page 9
650V CoolMOS™ C6 Power Transistor
Table 12
Typ. transfer characteristics Typ. gate charge
IPW65R070C6
Electrical characteristics diagrams
I
=f(VGS); VDS=20V
D
V
GS
=f(Q
), ID=26.3 A pulsed
gate
Table 13
Avalanche energy Drain-source breakdown voltage
E
=f(Tj); ID=9.3 A; VDD=50 V V
AS
=f(Tj); ID=1.0 mA
BR(DSS)
Final Data Sheet 9 Rev. 2.0, 2011-03-15
Page 10
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Table 14
Typ. capacitances Typ. C
stored energy
oss
Electrical characteristics diagrams
C=f(V
); VGS=0 V; f=1 MHz E
DS
Table 15
Forward characteristics of reverse diode
OSS
=f(VDS)
I
=f(VSD); parameter: T
F
j
Final Data Sheet 10 Rev. 2.0, 2011-03-15
Page 11
6 Package outlines
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches
Final Data Sheet 11 Rev. 2.0, 2011-03-15
Page 12
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
7 Revision History
Revision History: 2011-03-15, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last revision)
2.0 Release of final data sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Revision History
Edition 2011-03-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Final Data Sheet 12 Rev. 2.0, 2011-03-15
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