Datasheet IPD20N03L, IPU20N03L Datasheet (INFINEON)

OptiMOS Buck converter series

IPD20N03L
IPU20N03L

Feature

• N-Channel

• Logic Level

• Low On-Resistance R

• Excellent Gate Charge x R

• Superior thermal resistance

DS(on)

product (FOM)

DS(on)

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

• Ideal for fast switching buck converters

Type Package Ordering Code

IPD20N03L P- TO252 -3-11 Q67042-S4050
IPU20N03L P- TO251 -3-1 Q67042-S4106

Product Summary

V

DS

R

DS(on)

I

D

P- TO251 -3-1 P- TO252 -3-11

30 V
20 mΩ
30 A

Marking

20N03L
20N03L

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TC=25°C

1)

I

D

30

A

30

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=15A, VDD=25V, RGS=25Ω

Repetitive avalanche energy, limited by T

2) E

jmax

Reverse diode dv/dt

IS=30A, VDS=24V, di/dt=200A/µs, T

jmax

=175°C

Gate source voltage V
Power dissipation

TC=25°C

I

D puls

E

AS

AR

dv/dt 6 kV/µs

GS

P

tot

120

15 mJ

6

±20

60 W

V

Operating and storage temperature T

, T

j

stg

-55... +175

IEC climatic category; DIN IEC 68-1 55/175/56

Page 1

°C

2003-01-17

IPD20N03L
IPU20N03L

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

3)

R
R

R

thJC

thJA

thJA

- 1.7 2.5 K/W

- - 100

-

-

-

-

75
50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

ID=25µA

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

30 - - V

1.2 1.6 2

-

-

0.01
10

1

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=15A

Drain-source on-state resistance

VGS=10V, ID=15A

1

Current limited by bondwire ; with an R

information see app.-note ANPS071E available at www.infineon.com/optimos
2

Defined by design. Not subject to production test.

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

= 2.5K/W the chip is able to carry ID= 42A at 25°C, for detailed

thJC

Page 2

I

GSS

R

DS(on)

R

DS(on)

- 1 100 nA

- 22.9 31

- 15.5 20

mΩ

2003-01-17

IPD20N03L
IPU20N03L

Electrical Characteristics
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q

Gate charge total Q

fs

iss

oss

rss

G

d(on)

r

d(off)

f

gs

gd

g

VDS≥2*ID*R
ID=30A

VGS=0V, VDS=25V,
f=1MHz

DS(on)max

,

14 28 - S

- 530 700 pF

- 200 275

- 60 90

- 1.3 - Ω

VDD=15V, VGS=10V,

ID=15A,

RG=12.7Ω

- 6.2 9.3 ns

- 11 17

- 23 34

- 18 27

VDD=15V, ID=15A - 2.5 3.1 nC

- 6.4 9.6

VDD=15V, ID=15A,
VGS=0 to 5V

- 8.4 11

Output charge Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous
forward current

Inv. diode direct current, pulsed
Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q

oss

(plateau)

I

S

I

SM

SD

rr

rr

VDS=15V, ID=15A,
VGS=0V

VDD=15V, ID=15A - 3.6 - V

TC=25°C - - 30 A

- 8 10 nC

- - 120

VGS=0V, IF=30A - 1.1 1.4 V

VR=15V, I

diF/dt=100A/µs

F=lS

,

- 15 18 ns

- 2 3 nC

Page 3

2003-01-17

IPD20N03L
IPU20N03L

1 Power dissipation

P

= f (TC)

tot

IPD20N03L

65

W

55
50
45

tot

40

P

35
30
25
20
15
10

5

2 Drain current

ID = f (TC)
parameter: VGS≥ 10 V

IPD20N03L

32

A

24

D

20

I

16

12

8

4

0

0 20 40 60 80 100 120 140 160°C190

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TC = 25 °C

3

IPD20N03L

10

A

2

10

D

I

DS(on)

R

1

10

0

10

-1

10

=

10

D

I

/

DS

V

0

10

DC

1

T

C

tp = 35.0µs

100 µs

1 ms

10 ms

V

V

DS

10

0

0 20 40 60 80 100 120 140 160°C190

4 Max. transient thermal impedance

Z

= f (tp)

thJC

parameter : D = tp/T

1

IPD20N03L

10

K/W

0

10

thJC

-1

Z

10

-2

10

-3

10

single pulse

-4

10

-7

-6

2

10

10

10

-5

10

T

C

D = 0.50

0.20

0.10

0.05

0.02

0.01

-4

-3

10

10

-2

s

t

0

10

p

Page 4

2003-01-17

IPD20N03L
IPU20N03L

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

IPD20N03L

75

P

= 60W

tot

A

h

f

60
55
50

D

I

45
40
35
30
25
20
15
10

5
0

0 0.5 1 1.5 2 2.5 3 3.5 4

g

VGS [V]

e

d

c

b

a

a 3.0
b 3.5
c 4.0
d 4.5
e 5.0
f 6.0
g 7.0
h 10.0

V

V

DS

6 Typ. drain-source on resistance

R

parameter: V

5

= f (ID)

DS(on)

GS

IPD20N03L

65

mΩ

c

55
50
45

DS(on)

40

R

35
30
25
20
15
10

V

[V] =

GS

c

d

e

f

5

4.0

4.5

5.0

0

0 10 20 30 40 50

6.0

7.0

g

h

10.0

d

e

f

g

h

65

A

I

D

7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R

DS(on)max

parameter: tp = 80 µs

60

A

50
45
40

D

I

35
30
25
20
15
10

5

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C
parameter: g

fs

30

S

20

fs

g

15

10

5

0

0 1 2 3 4

V

V

GS

5.5

Page 5

0

0 5 10 15 20

A

I

D

2003-01-17

30

IPD20N03L
IPU20N03L

9 Drain-source on-state resistance

R

DS(on)

= f (Tj)

parameter : ID = 15 A, VGS = 10 V

IPD20N03L

50

mΩ

40

35

DS(on)

R

30

25

20

15

10

5

98%

typ

10 Typ. gate threshold voltage

V

= f (Tj)

GS(th)

parameter: VGS = V

3

DS

V

2

GS(th)

V

1.5

1

0.5

0.868mA

25µA

0

-60 -20 20 60 100 140

11 Typ. capacitances

C = f (VDS)
parameter: VGS=0V, f=1 MHz

4

10

pF

3

10

C

2

10

°C

200

T

j

0

-60 -20 20 60 100

°C

180

T

j

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

3

IPD20N03L

10

A

2

C

iss

C

oss

C

rss

10

F

I

1

10

Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)

1

10

0 5 10 15 20

0

V

30

V

DS

Page 6

10

0 0.4 0.8 1.2 1.6 2 2.4

V

V

SD

2003-01-17

3

IPD20N03L
IPU20N03L

13 Typ. avalanche energy

EAS = f (Tj)
par.: ID = 15 A, VDD = 25 V, RGS = 25 Ω

16

mJ

12

AS

10

E

8

6

4

2

15 Drain-source breakdown voltage

V

(BR)DSS

= f (Tj)

parameter: ID=10 mA

IPD20N03L

36

V

34

33

(BR)DSS

V

32

31

30

29

28

0

25 45 65 85 105 125 145

14 Typ. gate charge

V

GS

= f (Q

Gate

)

parameter: ID = 15 A pulsed

IPD20N03L

16

V

12

GS

10

V

0.2 V

DS max

8

0.5 V

DS max

0.8 V

DS max

6

4

°C

T

185

j

27

-60 -20 20 60 100 140

°C

200

T

j

2

0

0 2 4 6 8 10 12 14 16 18nC21

Q

Gate

Page 7

2003-01-17

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Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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of the user or other persons may be endangered.

IPD20N03L
IPU20N03L

Page 8

2003-01-17

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