The IPS7091(G)(S
Switch (IPS) with built in short circuit, over-temperature,
ESD protection, inductive load capability and diagnostic
feedback. The output current is limited at Ilim value.
Current limitation is activated until the thermal protection
acts. The over-temperature protection turns off the device
if the junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled 7°C
below Tshutdown. A diagnostic pin is provided for status
feedback of short circuit, over-temperature and open load
detection. The double level shifter circuitry allows large
offsets between the logic ground and the load.
)PbF is a five terminal Intelligent Power
Typical Connection
from power ground
ection
+5V
Data sheet N° 60291 revB
IPS7091(G)(S)PbF
Product Summary
Rds(on) 120mΩ max.
Vclamp 70V
I Limit 5A (typ.)
Open load 3V
Package
TO220 D2-Pak SO-8
IPS7091PbF IPS7091SPbF IPS7091GPbF
+Bat
V Diag
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RdgPull-up resistor for Open
Input Signal
15K
Dg(3)
In(2)Gnd(1)
Rin
Vcc(5-6-7-8)
Control
Load Off detection
Out(4)
Load
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IPS7091(G)(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Ground lead. (Tambient=25°C unless otherwise specified).
Symbol Parameter Min. Max. Units
Vout Maximum output voltage Vcc-65 Vcc+0.3
Voffset Maximum logic ground to load ground offset Vcc-65 Vcc+0.3
Vin Maximum input voltage -0.3 5.5
Vcc max. Maximum Vcc voltage
Vcc cont. Maximum continuous Vcc voltage
Iin max. Maximum IN current -1 10
Idg max. Maximum diagnostic output current -1 10
Vdg Maximum diagnostic output voltage -0.3 5.5 V
Pd
Isd cont. Maximum continuous diode current (Rth=100°C/W)
ESD1
ESD2
Tj max. Max. storage & operating temperature junction temperature -40 +150 °C
Maximum power dissipation (internally limited by thermal protection)
Rth=100°C/W
Electrostatic discharge voltage (Human body) 100pF, 1500Ω
Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω,L=10µH
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65
35
1.25 W
1.8 A
0.5
4
Thermal Characteristics
Symbol Parameter Typ. Max. Units
Rth1 Thermal resistance junction to ambient SO8 std. footprint 100
Rth1 Thermal resistance junction to ambient TO220 free air 60
Rth1 Thermal resistance junction to ambient D2Pak std. footprint 60
Rth2 Thermal resistance junction to ambient D2Pak 1” sqrt. footprint 40
Rth3 Thermal resistance junction to case D2pak/TO220 4
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Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
VIH High level input voltage 4 5.5
VIL Low level input voltage -0.3 0.9
Iout Continuous drain current, Tamb=85°C, Tj=125°C, Vin=5V, Rth=100°C/W
Rin Recommended resistor in series with IN pin 10 20
Rdgs Recommended resistor in series with DG pin 10 20
Rol Recommended pull-up resistor for open load detection 5 100
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1.5 A
V
mA
kV
°C/W
kΩ
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IPS7091(G)(S)PbF
Static Electrical Characteristics
Tj=25°C, Vcc=14V (unless otherwise specified)
Symbol Parameter Min. Typ.
Rds(on)
ON state resistance Tj=150°C
ON state resistance Tj=25°C, Vcc=6.5V Vin=5V, Iout=2A
ON state resistance Tj=25°C
Vcc op. 6
Operating voltage range
V clamp 1 Vcc to Out clamp voltage 1 65 70
V clamp 2 Vcc to Out clamp voltage 2
Vf Body diode forward voltage
Icc Off Supply current when Off
Icc On
Iout@0V
Iout@6V utput leakage current 20
Idg leakage
Supply current when On
Output leakage current
O
Diagnostic output leakage current
Vdgl Low level diagnostic output voltage
Vih Input high threshold voltage
Vil Input low threshold voltage
In hys Input hysteresis 0.15 0.4 1
UV high Under voltage high threshold voltage
UV low Under voltage low threshold voltage 3.4 4.5
UV hys U1.5
ndervoltage hysteresis 0.1 0.8
Iin On In80 µA V put current when device is On
Shing E
witclectrical Characteristics
VV, Resistiv
cc=14e load=14Ω, Vin=5V, Tj=25°C
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1
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Symbol Parameter Min. Typ. Max. Units Test Conditions
Tdon Turn-on delay time
Tr1 Rise time to Vout=Vcc-5V
Tr2 Rise time to Vout=0.9 x Vcc
dV/dt (On) T
EOn T
Tdoff T
urn On dV/dt
urn On energy
urn-off delay time
Tf Fall time to Vout=0.1 x Vcc
dV/dt (Off) T
EOff T20
Tdiag V
urn Off dV/dt
urn Off energy
out to Vdiag propagation delay
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Max. Units Test Conditions
80 120 , Vin=5V Iout=2A
150 230 Vin=5V, Iout=2A
90 130
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35
70 75 Iout=1A (see Fig. 1)
1 1.35
2.5 10 µA VV, Vout=0V in=0
2.5 3.5 mA V
10 out=
⎯
10
0.2 0.3 Idg=1.6mA
2.5 3.5
2
5 5.9
40 V5in=
12 35
7 40
14 50
0.95 3.5 V/µs
250
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20 45
6 25
1.8 5.5 V/µs
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15
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mΩ
Iout=30mA (see Fig. 1)
V
Io 2.5Aut=
Vin=5
V0V
µA
Vout=6V
V5.5V
dg=
V
µs
SFig. 3
µJ
ee
µs
µJ
µs See Fig. 4 and Fig. 12
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IPS7091(G)(S)PbF
Protection Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Ilim Internal current limit 2 5 8 A Vout=0V
Tsd+ Over temperature high threshold 150
Tsd- Over temperature low threshold
Vsc Short-circuit detection voltage
Vopen load Open load detection threshold
(1
)
Guaranteey design
(2
)
ReferenceVcc
d b
to
(2)
TTabl
ruth e
OperatinonditionsIN
g COUT DG pin
Normal H H H
Normal L L L
Open Load H H H
Open Load
(3)
Short circuit toimiting)L Gnd H L (l
Short circuit toL Gnd L L
Over-temperature H L (cycling)L
Over-temperature L L L
(3
)
With a p resistor connected between the outpucc.
ull-upt and V
Lead Assignments
8 7 6 5
1 2 3 4
8
SO
1- Gnd
2- In
3- DG
4- Out
5-6-7-8 Vcc
(1)
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2
2
HL H
3- Vcc
1 2 3 4 5
TO220
165
158
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3 4
3 4
1- G
2- In
3- V
4- D
5- O
°C See Fig. 2
V
nd
cc
g
ut
3- Vcc
1 2 3 4 5
D²Pak
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Functional Block Diagram
V
All values are typical
165°C
Tj
158°C
Vcc-Gnd >UV
2.5V
2.0V
IN
DG
6V
6V
75V
150kΩ
Gnd ProtectionLoss
LevelSh
ifter
Open Load
Short Circuit
IPS7091(G)(S)PbF
CC
-
+
66V
I Sense
I Limit
-
+
3V
+
Charge
Pump
Driver
3V
75V
30Ω
GND
OUT
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j
g
Vin
Ids
Vds clamp
Vds
Vcc
See Application Notes to evaluate power dissipation