Datasheet ips0551t Datasheet

Data Sheet No. PD60160-B

IPS0551T

FULLY PRO TECTED POWER MOSFET SWITCH

Features

• Over temperature shutdown

• Over current shutdown

• Active clamp

• Low current & logic level input

• E.S.D protection

Description

The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem­perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec­tion by turning OFF the power MOSFET when temperature
exceeds 165
The device restarts once the input is cycled. The ava­lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza­tions.

o

C or when the drain current reaches 100A.

Product Summary

R

ds(on)

V

clamp

Ishutdown 100A
T

on/Toff

Package

6.0mΩ (max)
40V

4µs

SUPER SMD220

SUPER TO220

Typical Connection

L oa d

R in series
( if needed )

Logic signal

(Refer to lead assignment for correct pin configuration)

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IN

control

D

S

IPS0551T

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (T
print with 70 µm copper thickness.

Symbol Parameter Min. Max. Units Test Conditions

V

ds

V

in

I+

in

I

sd cont.

I

sd pulsed

P

d Maximum power dissipation

ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
T

stor.

T

j

T

lead

Maximum drain to source voltage — 37
Maximum input voltage -0.3 7
Maximum IN current -10 +10 mA
Diode max. continuous current

(rth=60oC/W) — 2.8

(rth=5

Diode max. pulsed current

(rth=60oC/W) — 2 W

Max. storage temperature -55

max. Max. junction temperature -40

Lead temperature (soldering, 10 seconds) — 300

= 25oC unless otherwise specified). PCB mounting uses the standard foot-

Ambient

V

(1)

o

C/W) — 35

(1)

(1)

— 100

150

+150

A

kV

o

C

Thermal Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

Rth 1 Thermal resistance free air — 60 —
Rth 2 Thermal resistance to PCB min footprint — 60 —
Rth 3 Thermal resistance to PCB 1" sq. footprint — 35 —
Rth 4 Thermal resistance junction to case — 0.7

o

C/W

a

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter Min. Max. Units

Vds
V

IH

V

IL

I

ds

Tamb=85oC (

R

in

T

r-in (max)

Fr-I

(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operation at higher switching frequencies is possible. See Appl. Notes.

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Continuous drain to source voltage — 18

(max)

High level input voltage 4 6
Low level input voltage

Continuous drain current

TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) — 8

(
Recommended resistor in series with IN pin 0.1 0.5 kΩ
Max recommended rise time for IN signal (see fig. 2) — 1 µS

(2)

Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz

sc

TAmbient = 85oC, IN = 5V, rth = 5oC/W, Tj = 125oC) — 35

0 0.5

V

A

IPS0551T

Static Electrical Characteristics

(Tj = 25oC and Vcc = 14V unless otherwise specified. Standard footprint 70µm of copper thickness)

Symbol Parameter Min. Typ. Max. Units Test Conditions

R

ds(on)

@Tj=25oC

R

ds(on)

@Tj=150oC

Idss Drain to source leakage current 0 0.01 25 µA Vcc = 14V, Tj = 25oC

@Tj=25oC

V clamp 1
V clamp 2 Drain to source clamp voltage 2 —
V

sd

V

in clamp

V

th

I

in, on

I

in, off

ON state resistance Tj = 25

ON state resistance Tj = 150oC — 7.5

Drain to source clamp voltage 1

Body diode forward voltage — 0.85
IN to source clamp voltage
IN threshold voltage 1.0 1.8 2.2
Input supply current (normal operation)
Input supply current (protection mode)

Switching Electrical Characteristics

Vcc = 14V, Resistive Load = 0.4Ω, Rinput = 50Ω, 100µs pulse, Tj = 25oC, (unless otherwise specified).

o

C — 4.5 6.0

37 40

43 48

7 8.0 9.5

25 90
50 130

Vin = 5V, Ids = 10A

mΩ

8.8

—

1I

300 Vin = 5V
400 Vin = 5V

Id

= 20mA (see Fig.3 & 4)

I=35A -t<100us

= 35A,

d

V

I

= 1 mA

in

I

=

50mA, Vds = 14V

d

µA

over-current triggered

V

= 0V

in

 Symbol Parameter Min. Typ. Max. Units Test Conditions

T

on

T

r

T

rf

T

off

T

f

Q

in

Turn-on delay time 0.25 1 4
Rise time 0.25

Time to 130% final R
Turn-off delay time 1.5 4 8
Fall time 0.5 2 5
Total gate charge — 200 —

ds(on)

—15—

14

See figure 2

µs

See figure 2

nC Vin = 5V

Protection Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

T

sd

I

sd

V

reset

T

reset

EOI_OT Short circuit energy (cf application note)

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Over temperature threshold — 16 5 —
Over current threshold 60 100 150 A See fig. 1

IN protection reset threshold 1.5 1.9 2.8 V
Time to reset protection 2 10 40 µs Vin = 0V, Tj = 25oC

100

400

1200

o

C See fig. 1

µJ

Vcc = 14V

IPS0551T

Functional Block Diagram

All values are typical

IN

8V

µ

80

A

Lead Assignments

DRAIN

37 V

Ω

200

S

R

Q

Q

100 k

T > 165°c

I > Isd

Ω

I sense

SOURCE

2 ( D )

1 2 3

1 2 3
In D S

SUPER TO220

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In D S

SUPER SMD220

(Advanced Information)

p

p

(

)

Vin

Ids

Isd

T

Tsd

(165 °c)

IPS0551T

5 V

0 V

t < T reset

I shutdown

T shutdown

t > T reset

90 %
10 %

10 %

90 %

Tr-in

Tr-in

Td on

tr

Td off

tf

Figure 1 - Timing diagram

Vds clam

Vcc

( see Appl . Notes to evaluate power dissipation )

T clam

Figure 2 - IN rise time & switching time definitions

L

V load

Rem : V load is negative
during demagnetization

Vin

5 v
0 v

R

D

IN

S

14 V

Figure 4 - Active clamp test circuitFigure 3 - Active clamp waveforms

+

-

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IPS0551T

All curves are typical values with standard footprint. Operating in the shaded area is not recommended.

12
11
10

9
8
7
6

Tj = 150oC

5
4
3
2

Tj = 25oC

1
0

012345678

(mΩ) Vs Input Voltage (V)

(on)

40
35
30

ton delay

130% rdson

rise time

25
20
15
10

5
0

012345678

200%
180%
160%
140%
120%
100%

80%
60%
40%
20%

0%

-50 -25 0 25 50 75 100 125 150 175

Figure 6 - Normalised Rds

40
35

(%) Vs Tj (

(on)

toff delay
fall time

30
25
20
15
10

5
0

012345678

o

C)Figure 5 - Rds

Figure 7 - Turn-ON Delay Time, Rise Time & Time

to 130% final Rds(on) (us) Vs Input Voltage (V)

Figure 8 - Turn-OFF Delay Time & Fall Time (us)

Vs Input Voltage (V)

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IPS0551T

100

delay on
rise time
130% rdson

10

1

10 100 1000

Figure 9 - Turn-ON Delay Time, Rise Time & Time

to 130% final Rds(on) (us) Vs IN Resistor (Ω)

150
140
130
120
110
100

90
80
70
60
50
40
30
20
10

Isd 25 °C
Ilim 25°C

0

0123456789

100

delay off
fall time

10

1

10 100 1000

Figure 10 - Turn-OFF Delay Time & Fall Time (us)

Vs IN Resistor (Ω)

100

90
80
70
60
50
40
30
20
10

0

-50 -25 0 25 50 75 100 125 150

Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V)

Figure 12 - Over-current (A) Vs Temperature (oC)

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IPS0551T

rth = 1°C /W ( c as e to ambient)

100

90
80

rt h = 5°C/W
rt h = 15 °C /W
rth = 30°C/W: 1'' foot print
r th = 60 °C /W : s t d. f oot pri n t

70
60
50
40
30
20
10

0

-50 0 50 100 150 200

Figure 13 - Max.Cont. Ids (A) Vs

Amb. Temperature (oC)

1000

T=2 5°C free air/ std. footprint
T=100°C free air/ std. footprint

Cur r e n t pa t h capa bilit y sho uld

100

Load characteristic should
be below this cur ve

be above this curve

10

1

Figure 14 - Ids (A) Vs Protection Resp. Time (s)

1000

100

10

1

0.1

0.001 0.01 0.1 1 10

single pulse
10 Hz rth=60°C/W dT=25°C
100Hz rth=60°C/W dT=25°C

Figure 15 - Iclamp (A) Vs Inductive Load (mH)

1.00E+02

1.00E+01

1.00E+00

1.00E-01

rth free air / std. fooprint
rth 1 inch² footprint

1.00E-02

rth infinite heatsink

Figure 16 - Transient Thermal Imped. (oC/W)

Single pulse

Vs Time (s)

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IPS0551T

200
180
160
140
120
100

80
60
40
20

Iin,on
Iin,off

0

-50 -25 0 25 50 75 100 125 150

Figure 17 - Inputcurrent (µA) Vs Junction (oC) Figure 18 - Turn-on, Turn-off and Treset (µS) Vs Tj (oC)

16
14
12
10

8
6
4
2
0

-50 -25 0 25 50 75 100 125 150

Treset
rise time
fall time

120%
115%
110%
105%
100%

95%
90%
85%
80%

-50 -25 0 25 50 75 100 125 150

Figure 19 - Vin clamp1 & Vin clamp2 (%) Vs Tj (oC)

Vds clamp @ Isd
Vin clamp @ 10mA

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IPS0551T

OS

Case outline Super TO220

11.00 [.433]

10.00 [.394]

15.00 [.590]

14.00 [.552]

14.50 [.570]

13.00 [.512]

1.30 [.051]
3X

0.90 [.036]

0.25 [.010] B A

4X

1.50 [.059]

0.50 [.020]

4.00 [.157]

3.50 [.138]

2.55 [.100]

A

123

2X

Case outline Super SMD220

5.00 [.196]

4.00 [.158]

1.00 [.039]

0.70 [.028]

B

3.00 [.118]

2.50 [.099]

9.00 [.354]

8.00 [.315]

0.25 [.010]

13.50 [.531]

4

12.50 [.493]

BA

LEAD ASSIGNMENTS

MOS FET

1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN

1. DIM ENSIONIN G & TOLERAN CING PER A SME Y14.5M-1994.

2. CONT ROLL ING DIME NS I ON: MILL IME TER .

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT LINE CONF OR MS TO J E DEC OUT LINE T O-273AA.

IGBT

1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR

01-3073 02

IRGB-012-012 5

6/22/2001

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