Datasheet ips042g Datasheet

Data Sheet No.PD 60153-J

IPS042G

DUAL FULLY PRO TECTED POWER MOSFET SWITCH

Features

• Over temperature shutdown

• Over current shutdown

• Active clamp

• Low current & logic level input

• E.S.D protection

Description

The IPS042G is a fully protected dual low side SMART POWER MOSFET that features over-current, over-temperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 drain current reaches 2A. This device restarts once the input is cycled. The avalanche capability is sig nificantly enhanced by the active clamp and covers most inductive load demagnetizations.

o

C or when the

Typical Connection

Product Summary

R

ds(on)

V

clamp

I

shutdown

T

on/Toff

Package

8-Lead SOIC

500mΩ (max)

50V

2A

1.5µs

Load

R in series (if needed)

Q

Logic signal

(Refer to lead assignment for correct pin configuration)

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IN

control

S

D

S

31

IPS042G

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (T copper thickness.

= 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm

Ambient

Symbol Parameter Min. Max. Units Test Conditions

V

ds

V

in

I

in, max

I

sd cont.

I

sd pulsed

P

d Maximum power dissipation

ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH T

stor.

T

j

Maximum drain to source voltage — 47 Maximum input voltage -0.3 7 Maximum IN current -10 +10 mA

(1)

—3

(1)

Diode max. continuous current (for all Isd mosfets, rth=125oC/W) — 1.2 Diode max. pulsed current

(for all Pd mosfets, rth=125oC/W) — 1 W

Max. storage temperature -55

max. Max. junction temperature -40

150

+150

kV

o

V

A

C

Thermal Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

R

th1

R

th2

R

th3

Thermal resistance with standard footprint

(2 mosfets on)

Thermal resistance with standard footprint

(1 mosfet on) —

Thermal resistance with 1" square footprint

(2 mosfets on)

100

—

125

—

65

—

o

C/W

—

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter Min. Max. Units

Vds V

IH

V

IL

I

ds

Tamb=85oC

R

in

T

r-in(max)

Fr-I

(1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Appl. notes.

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Continuous Drain to Source voltage

(max)

High level input voltage 4 6 Low level input voltage Continuous drain current (both mosfets at this current)

TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC — 0.53 A

Recommended resistor in series with IN pin 1 Max recommended rise time for IN signal (see fig. 2) — 1 µS

(2)

Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz

sc

—

0 0.5

35

V

5 k

Ω

IPS042G

Static Electrical Characteristics

(Tj = 25oC unless otherwise specified.)

Symbol Parameter Min. T yp. Max. Units Test Conditions

R

ds(on)

I

dss1

@Tj=25oC

I

dss2

@Tj=25oC

V clamp 1 V clamp 2 Drain to Source clamp voltage 2 V

in

Vin I

in, -on

I

in, -off

ON state resistance Tj = 25

Drain to source leakage current 0 0.5 25 Vcc = 14V, Tj = 25oC

Drain to source leakage current 0 5 50 Vcc = 40V, Tj = 25oC

Drain to Source clamp voltage 1

IN to Source clamp voltage

clamp

IN threshold voltage 1 1.6 2

th

ON state IN positive current OFF state IN positive current

Switching Electrical Characteristics

Vcc = 14V, Resistive Load = 20Ω, Rinput = 1kΩ, 100

Symbol Parameter Min. Typ. Max. Units Test Conditions

T

on

T

r

T

rf

T

off

T

f

Q

in

Turn-on delay time Rise time Time to 130% final R Turn-off delay time Fall time Total gate charge

o

C — 370 500

Tj = 150oC — 590

47 52 50 53 60

7 8.1 9.5

25 90 50 130

µ

s pulse, T

ds(on)

= 25oC, (unless otherwise specified).

j

0.05

0.5

0.5 —

0.2

1.3

—

1.6

1.5

900

56

200 Vin = 5V 250 Vin = 5V

0.5

2.5

5

—

2.5

1

—

mΩ

Vin = 5V, Ids = 1A

µA

Id

= 20mA (see Fig.3 & 4)

Id=I

V

µA

µ

s

nC Vin = 5V

shutdown

I

= 1 mA

in

I

= 50mA, Vds = 14V

d

over-current triggered

See figure 2

(see Fig.3 & 4)

Protection Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

T

sd

I

sd

V

reset

T

reset

EOI_OT Short circuit energy (see application note)

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Over temperature threshold — 165 — Over current threshold 1.1 1.7 2.2 A See fig. 1 IN protection reset threshold 1. 5 2.3 3 V Time to reset protection

—

10

2

400

o

C See fig. 1

µs Vin = 0V, Tj = 25oC

40

µJVcc = 14V

—

IPS042G

Functional Block Diagram

All values are typical

IN

8.1 V

µ

80

A

Lead Assignments

DRAIN

47 V

Ω

200 k

T > 165°c

I > 1sd

I sense

4000Ω

S

R

Q Q

SOURCE

D1 D1 D2 D2

1

S1 In1 S2 In2

8 Lead SOIC

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Vin

p

(

)

Ids

Isd

T

Tsd

(165 °c)

IPS042G

5 V

0 V

t < T reset

I shutdown

T shutdown

t > T reset

90 %

i

10 %

Tr-in

90 %

10 %

Td on

tr

Td off

tf

Figure 1 - Timing diagram

Vds clam

Vcc

( see Appl . Notes to evaluate power dissipation )

Figure 3 - Active clamp waveforms

T clam

Figure 2 - IN rise time & switching time definitions

L

V load

Rem : V load is negative during demagnetization

Vin

5 v 0 v

R

D

IN

S

14 V

Figure 4 - Active clamp test circuit

+

-

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IPS042G

All curves are typical values with standard footprints. Operating in the shaded area is not recommended.

1200 1100 1000

900 800 700 600 500 400 300 200 100

0

012345678

Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)

10

9 8 7 6 5 4 3 2 1 0

012345678

Figure 7 - Turn-ON Delay Time, Rise Time & Time

to 130% final Rds(on) (us) Vs Input Voltage (V)

Tj = 150oC

Tj = 25oC

ton delay rise time 130% rdson

200% 180% 160% 140% 120% 100%

80% 60% 40% 20%

0%

-50 -25 0 25 50 75 100 125 150 175

Figure 6 - Normalised Rds ON (%) Vs Tj (oC)

4

3

2

1

0

012345678

Figure 8 - Turn-OFF Delay Time & Fall Time (us)

Vs Input Voltage (V)

toff delay fall time

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IPS042G

100

delay on rise time 130% rdson

10

1

0.1

10 100 1000 10000

Figure 9 - Turn-ON Delay Time, Rise Time & Time

to 130% final Rds(on) (us) Vs IN Resistor (Ω)

3

2.5

2

1.5

1

0.5

0

Isd 25°C Ilim 25°C

012345678

100

delay off fall time

10

1

0.1 10 100 1000 10000

Figure 10 - Turn-OFF Delay Time & Fall Time (us)

Vs IN Resistor (Ω)

20 18 16 14 12 10

8 6 4 2 0

-50 -25 0 25 50 75 100 125 150

Figure 12 - I shutdown (A) Vs Temperature (oC)Figure 11 - Current Iim. & I shutdown (A)

Vs Vin (V)

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IPS042G

3

Std. foo tprint 127°C/W 1 mosfet on

Std. foo tprint 100°C/W 2 mosfet on

2

1

0

-50 0 50 100 150 200

Figure 13 - Max.Cont. Ids (A) Vs

Amb. Temperature (oC)

10

single pulse 1000 Hz rth=100°C/W dT=25°C 10kHz rth=100°C/W dT=25 °C

10

T=25°C Std. fo ot print T=100 °C Std foot print

Current path capability should be above this curve

1

1 mosfet is on

Load characteristic should

Load charact e r istic sho uld be below this curve

be underneath this curve

0.1

Figure 14 - Ids (A) Vs Protection Resp. Time (s)

100

10

1

Single pulse

rth 1 mosfet active

Vbat = 14 V Tjini = T sd all curves for 1 mosfet active

0.1

rth 2 mosfets active

0.1

0.01 0.1 1 10 100

Figure 15 - Iclamp (A) Vs Inductive Load (mH) Figure 16 - Transient Thermal Imped. (oC/W)

Vs Time (s)

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IPS042G

200 180 160 140 120 100

80 60 40 20

0

-50 -25 0 25 50 75 100 125 150

Figure 17 - Input current (µA) Vs Tj (oC)

16 14 12 10

Iin,on Iin,off

Treset rise time fall time

120% 115% 110% 105% 100%

95% 90% 85%

Vds clamp @ Isd Vi n clamp @ 10mA

80%

-50 -25 0 25 50 75 100 125 150

Figure 18 - Vin clamp and V clamp2 (%)

Vs Tj (oC)

8 6 4 2 0

-50 -25 0 25 50 75 100 125 150

Figure 19 - Turn-on, Turn-off, and Treset (µs)

Vs Tj (oC)

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IPS042G

A

87

6

E

e

6X

8X b

0.25 [.010] C A B

NOTES :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CON TROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES].

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

D B

5

65

4312

e1

A1

H

0.25 [.010] A

A

C

0.10 [.004]

6.46 [.255]

3X 1.27 [.050]

y

8-Lead SOIC

DIM

FOOTPRINT

8X 0.72 [.028]

8X 1.78 [.070]

MIN MAX

.0688

.0532

A A1 b c .0075 .0098 0.19 0.25 D E e

e1

H K L y

.0098

.0040

.020

.013

.1968

.189

.1574

.1497 .050 BASIC .025 BASIC 0.635 BASIC

.2440

.2284

.0196

.0099

.050

.016

8°

0°

K x 45°

8X L

8X c

7

5 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].

6 DIMENS ION DOES NOT INCLUDE MOLD PROTRUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS T HE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.

01-0021 11

MILLIMETE RSINCHES

MIN MAX

1.75

1.35

0.25

0.10

0.51

0.33

5.00

4.80

4.00

3.80

1.27 BASIC

6.20

5.80

0.50

0.25

1.27

0.40 0°

8°

01-6027

(MS-012AA)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105

Data and specifications subject to change without notice. 6/11/2001

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