Datasheet ips031g Datasheet

Data Sheet No.PD 60151-J

IPS031G/IPS032G

SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH

Features

• Over temperature shutdown

• Over current shutdown

• Active clamp

• Low current & logic level input

• E.S.D protection

Description

The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165 The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.

o

C or when the drain current reaches 12A.

Typical Connection

Product Summary

R

ds(on)

V

clamp

Ishutdown 12A T

on/Toff

Packages

8-Lead SOIC

IPS031G

70mΩ (max)

50V

1.5µs

16-Lead SOIC

IPS032G

(Dual)

Load

R in series (if needed)

Q

Logic signal

(Refer to lead assignment for correct pin assignment)

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IN

control

S

D

S

31

IPS031G/IPS032G

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (T copper thickness. All Sources leads of each mosfet must be connected together to get full current capability

Symbol Parameter Min. Max. Units Test Conditions

V

ds

V

in

I

in, max

I

sd cont.

I

sd pulsed

P

d Maximum power dissipation

ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω, ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH T

stor.

T

j

Maximum drain to source voltage — 47 Maximum input voltage -0.3 7 Maximum IN current -10 +10 mA Diode max. continuous current

(rth=125oC/W) IPS031G — 1 .4 (for all sd mosfets, rth=85 Diode max. pulsed current

(rth=125oC/W) IPS031G — 1 W

(for all Pd mosfets, rth=85

Max. storage temperature -55

max. Max. junction temperature -40

= 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm

Ambient

V

(1)

o

C/W) IPS032G — 2

(1)

(for ea. mosfet)

(1)

o

C/W) IPS032G — 1 .5

—15

150 150

A

kV

o

C

Thermal Chacteristics

Symbol Parameter Min. T yp. Max. Units Test Conditions

R

th1

R

th2

R

th1

(2 mos on) (2 mosfets on) — 85 R

th2

(1 mos on) (1 mosfet on) — 100 — R

th3

(2 mos on) (2 mosfets on) — 60 —

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

Thermal resistance with standard footprint Thermal resistance with 1" square footprint —

Thermal resistance with standard footprint

Thermal resistance with 1" square footprint

—

100

65

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— —

—

o

C/W

SOIC-8

SOIC-16

IPS031G/IPS032G

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter Min. Max. Units

Vds V

IH

V

IL

I

ds

Tamb=85oC (

R

in

T

r-in(max)

Fr-I

Static Electrical Characteristics

(Tj = 25oC unless otherwise specified.)

Symbol Parameter Min. Typ. Max. Units Test Conditions

R

ds(on)

R

ds(on)

I

dss

@Tj=25oC

I

dss2

@Tj=25oC

V clamp 1

V clamp 2 Drain to source clamp voltage 2 50 V

in clamp

V

th

I

in, -on

I

in, -off

Continuous Drain to Source voltage

(max)

High level input voltage 4 6 Low level input voltage Continuous drain current

TAmbient = 85 ( Recommended resistor in series with IN pin 0.2

Max recommended rise time for IN signal (see fig. 2) — 1 µS

(2)

Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz

sc

ON state resistance Tj = 25oC 204560 ON state resistance Tj = 150oC—75 Drain to source leakage current 0 0.5 25 Vcc = 14V, Tj = 25oC

Drain to source leakage current 0 5 50 Vcc = 40V, Tj = 25oC

Drain to source clamp voltage 1

IN to source clamp voltage IN threshold voltage 1 1.6 2 ON state IN positive current OFF state IN positive current

TAmbient = 85oC, IN = 5V, rth = 85oC/W, Tj = 125oC) IPS032G — 1.65

o

C, IN = 5V, rth = 100oC/W, Tj = 125oC) IPS031G — 2.2 A

100

47 52

53 60

7 8.1 9.5

25 90 50 130

56

200 Vin = 5V 250 Vin = 5V

—

0 0.5

Vin = 5V, Ids = 1A

mΩ

µA

Id

= 20mA (see Fig.3 & 4)

Id=I

V

µA

shutdown

I

= 1 mA

in

I

= 50mA, Vds = 14V

d

over-current triggered

35

V

5 k

Ω

(see Fig.3 & 4)

Switching Electrical Characteristics

V

= 14V, Resistive Load = 5Ω (IPS031), Resistive Load = 3Ω (IPS031S), Rinput = 50Ω, 100µs pulse,Tj = 25oC, (unless

cc

otherwise specified).

Symbol Parameter Min. Typ. Max. Units Test Conditions

T

on

T

r

T

rf

T

off

T

f

Q

in

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Turn-on delay time Rise time Time to 130% final R Turn-off delay time Fall time Total gate charge

ds(on)

0.05

0.4 —

0.8

0.5

—

0.3 1 8 2

1.5

1.1

0.6 2

—

3.5

2.5

—

See figure 2

µ

s

See figure 2

nC Vin = 5V

IPS031G/IPS032G

Protection Characteristics

Symbol Parameter Min. Typ. Max. Units Test Conditions

T

sd

I

sd

V

reset

T

reset

EOI_OT Short circuit energy (see application note)

Over temperature threshold — 165 — Over current threshold 10 14 18 A See fig. 1 IN protection reset threshold 1. 5 2.3 3 V Time to reset protection

—

10

2

40

400

Functional Block Diagram

All values are typical

300

Ω

200 k

o

C See fig. 1

µs Vin = 0V, Tj = 25oC

µJVcc = 14V

—

DRAIN

47 V

Ω

IN

8.1 V

µ

80

A

Lead Assignments

D D D D

1

S S S In

8 Lead SOIC

IPS031G

S

R

Q Q

T > 165°c

I > 1sd

I sense

SOURCE

D1

D1 D1 D1 D2 D2 D2 D2

1

S1 S1 S1 I1 S2 S2 S2 I2

16 Lead SOIC

(Dual)

IPS032G

Part Number

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Vin

p

(

)

Ids

Isd

T

Tsd

(165 °c)

IPS031G/IPS032G

5 V

0 V

t < T reset

I shutdown

T shutdown

t > T reset

90 %

10 %

90 %

Tr-in

Td on

tr

Td off

tf

Figure 1 - Timing diagram

Vds clam

Vcc

( see Appl . Notes to evaluate power dissipation )

Figure 3 - Active clamp waveforms

T clam

Figure 2 - IN rise time & switching time definitions

L

V load

Rem : V load is negative during demagnetization

Vin

5 v 0 v

R

D

IN

S

+

14 V

-

Figure 4 - Active clamp test circuit

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IPS031G/IPS032G

All curves are typical values with standard footprints. Operating in the shaded area is not recommended.

100

90 80 70 60 50 40 30 20 10

0

012345678

Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)

10

9 8 7 6 5 4 3 2 1 0

012345678

ton delay rise time 130% final r dson

Tj = 150oC

Tj = 25oC

200% 180% 160% 140% 120% 100%

80% 60% 40% 20%

0%

-50 -25 0 25 50 75 100 125 150 175

Figure 6 - Normalised Rds ON (%) Vs Tj (oC)

10

9 8 7 6 5 4 3 2 1 0

012345678

toff delay fall time

Figure 7 - Turn-ON Delay Time, Rise Time &

Time to 130% final Rds(on) (us) Vs Input Voltage

(V)

Figure 8 - Turn-OFF Delay Time & Fall Time (us)

Vs Input Voltage (V)

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IPS031G/IPS032G

100

delay on rise time 130% rdson

10

1

0.1

10 100 1000 10000

Figure 9 - Turn-ON Delay Time, Rise Time &

Time to 130% final Rds(on) Vs IN Resistor (Ω)

20 18 16 14 12 10

8 6 4 2

Isd 25°C Ilim 25°C

0

012345678

100

delay off fall time

10

1

0.1 10 100 1000 10000

Figure 10 - Turn-OFF Delay Time & Fall Time (us)

Vs IN Resistor (Ω)

20 18 16 14 12 10

8 6 4 2 0

-50 -25 0 25 50 75 100 125 150

Figure 12 - I shutdown (A) Vs Temperature (oC)Figure 11 - Current Iimimitation & I shutdown (A)

Vs Vin (V)

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IPS031G/IPS032G

10

8

6

4

2

0

-50 0 50 100 150 200

Vs Amb. Temperature (oC) - IPS031G

100

rth = 5 0°C/W SO8 Std. footprint 100°C/W

Figure 13a - Max.Cont. Ids (A)

T = 2 5 °C T = 100 °C

10

8

6

4

2

0

-50 0 50 100 150 200

SO16 Std. footprint 1 m osfe t on SO8 Std. footprint 2 mosfets on

Figure 13b - Max.Cont. Ids (A)

Vs Amb. Temperature (oC) - IPS032G

single pulse

100

100 Hz rth=100°C /W dT=25 °C 1kHz rth=100°C/ W dT=25 °C

10

1

Vbat = 14 V

1

Figure 14 - Ids (A) Vs Protection Resp. Time (s)

IPS031G/IPS032G

Tjini = T s d

0.1

0.01 0.1 1 10 100

Figure 15 - Iclamp (A) Vs Inductive Load (mH)

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IPS031G/IPS032G

100

rth SO8 std footprint

10

1

Single pulse

0.1

0.01

Figure 16a - Transient Thermal Imped. (oC/W)

Vs Time (s) - IPS031G

200 180 160 140 120 100

80 60 40 20

Iin,on Iin,off

0

-50 -25 0 25 50 75 100 125 150

100

10

0.1

1

rth SO16 std footprint 1

Single pulse

mosfet active rth SO16 std footprint 2

0.01

mosfets active

Figure 16b - Transient Thermal Imped. (oC/W)

Vs Time (s) - IPS032G

120% 115% 110% 105% 100%

95% 90% 85%

Vds clamp @ Isd Vi n clamp @ 10mA

80%

-50 -25 0 25 50 75 100 125 150

Figure 17 - Input current (µA) Vs Tj (oC)

Figure 18 - Vin clamp and V clamp2 (%)

Vs Tj (oC)

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IPS031G/IPS032G

16 14 12

Treset rise time fall time

10

8 6 4 2 0

-50 -25 0 25 50 75 100 125 150

Figure 19 - Turn-on, Turn-off, and Treset KI

Vs Tj (oC)

Case Outlines

D B

A

87

6

E

e

6X

5

65

4312

H

0.25 [.010] A

6.46 [.255]

3X 1.27 [.050]

FOOTPRINT

8X 0.72 [.028]

8X 1.78 [.070]

.0688 .0098 .020

.1968 .1574

.2440 .0196 .050

8°

MILLIMET ERSINCHES

MIN MAX

1.35

0.10

0.33

4.80

3.80

1.27 BASIC

5.80

0.25

0.40 0°

DIM

MIN MAX

.0532

A

.0040

A1

.013

b c .0075 .0098 0.19 0.25

.189

D

.1497

E

.050 BASIC

e

.025 BASIC 0.635 BASIC

e1

.2284

H

.0099

K

.016

L

0°

y

1.75

0.25

0.51

5.00

4.00

6.20

0.50

1.27 8°

e1

A

C

8X b

A1

0.25 [.010] C A B

NOTES :

1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENS IONS ARE S HOWN IN MILLIMET E R S [INCHES ].

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

y

0.10 [.004]

8-Lead SOIC

K x 45 °

8X L

8X c

7

5 DIMENS ION DOES NOT INCLUDE MOLD PR OTRUS IONS . MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6 DIMENS ION DOES NOT INCLUDE MOLD PR OTRUS IONS . MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.

01-0021 11

01-6027

(MS-012AA)

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IPS031G/IPS032G

16 -Lead SOIC (narrow body)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105

Data and specifications subject to change without notice. 6/11/2001

01-3064 00 (MS-012AC)

01-6018

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