Page 1
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Data Sheet
Rev. 2.0, 2010-04-09
Final
Industrial & Multimarket
Page 2
600V CoolMOS™ E6 Power Transistor IPP60R520E6, IPA60R520E6
1 Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter,and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1)qualified, Pb-free plating, halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
gate
pin 1
drain
pin 2
source
pin 3
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter Value Unit
V
@ T
DS
R
DS(on),max
Q
g,typ
I
D,pulse
E
oss
j,max
@ 400V 2.1 µJ
650 V
0.52 !
23.4 nC
22 A
Body diode di/dt 500 A/µs
Type / Ordering Code Package Marking Related Links
IPA60R520E6 PG-TO220 FullPAK 6R520E6 IFX CoolMOS Webpage
IPP60R520E6 PG-TO220 IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.0, 2010-04-09
Page 3
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Final Data Sheet 3 Rev. 2.0, 2010-04-09
Page 4
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Maximum ratings
2 Maximum ratings
at Tj= 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse E
Avalanche energy, repetitive E
Avalanche current, repetitive I
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V
Gate source voltage V
Power dissipation for
TO-220
Power dissipation for
TO-220 FullPAK
Operating and storage temperature Tj,T
Mounting torque
TO-220
Mounting torque
TO-220 FullPAK
Continuous diode forward current I
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
3)
speed
1) Limited by T
2) Pulse width tplimited by T
3) Identical low side and high side switch with identical R
j,max.
1)
2)
2)
3)
I
D
I
D,pulse
AS
AR
AR
GS
P
tot
P
tot
stg
S
I
S,pulse
dv/dt - - 15 V/ns VDS=0...400 V,I
dif/dt 500 A/µs (see table 22)
Maximum duty cycle D=0.75
j,max
- - 8.1 A TC= 25 °C
5.1 TC= 100°C
- - 22 A TC=25 °C
- - 153 mJ ID=1.4 A,VDD=50 V
(see table 21)
- - 0.23 ID=1.3 A,VDD=50 V
- - 1.4 A
-20 - 20 V static
-30 30 AC (f>1 Hz)
- - 66 W TC=25 °C
- - 29 W TC=25 °C
-55 - 150 °C
- - 60 Ncm M3 and M3.5 screws
50 M2.5 screws
- - 7 A TC=25 °C
- - 22 A TC=25 °C
" I
SD
Tj=25 °C
G
D
,
Final Data Sheet 4 Rev. 2.0, 2010-04-09
Page 5
600V CoolMOS™ E6 Power Transistor
Thermal characteristics
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R520E6)
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Thermal resistance, junction - case R
Thermal resistance, junction -
thJC
R
thJA
- - 1.9 °C/W
- - 62 leaded
ambient
Soldering temperature,
T
sold
- - 260 °C 1.6 mm (0.063 in.)
wavesoldering only allowed at
leads
Table 4 Thermal characteristics TO-220FullPAK (IPA60R520E6)
Test Condition
from case for 10 s
IPx60R520E6
Parameter Symbol Values Unit Note /
Test Condition
Thermal resistance, junction - case R
Thermal resistance, junction -
Min. Typ. Max.
thJC
R
thJA
- - 4.3 °C/W
- - 80 leaded
ambient
Soldering temperature,
wavesoldering only allowed at
T
sold
- - 260 °C 1.6 mm (0.063 in.)
from case for 10 s
leads
Final Data Sheet 5 Rev. 2.0, 2010-04-09
Page 6
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Electrical characteristics
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 5 Static characteristics
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Drain-source breakdown voltage V
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate resistance R
(BR)DSS
GS(th)
DSS
GSS
DS(on)
G
600 - - V VGS=0 V, ID=0.25 mA
2.5 3 3.5 VDS=VGS, ID=0.23mA
- - 1 µA VDS=600 V, VGS=0 V,
T
=25 °C
j
- 10 - VDS=600 V, VGS=0 V,
T
=150 °C
j
- - 100 nA VGS=20 V, VDS=0 V
- 0.47 0.52 ! VGS=10 V, ID=2.8 A,
T
=25 °C
j
- 1.22 - VGS=10 V, ID=2.8A,
T
=150 °C
j
- 9 - ! f=1 MHz, open drain
Table 6 Dynamic characteristics
Parameter Symbol Values Unit Note /
Test Condition
f=1 MHz
V
=0...480 V
DS
V
=0...480V
DS
V
=13 V, ID=3.5 A,
GS
R
= 6.8 !
G
(see table 20)
Input capacitance C
Output capacitance
Effective output capacitance,
energy related
1)
Effective output capacitance, time
related
2)
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
1) C
2) C
is a fixed capacitance that gives the same stored energy as C
o(er)
is a fixed capacitance that gives the same charging time as C
o(tr)
C
C
C
d(on)
r
d(off)
f
iss
oss
o(er)
o(tr)
Min. Typ. Max.
- 512 - pF VGS=0 V, VDS=100 V,
- 35 -
- 23 - VGS=0 V,
- 100 - ID=constant,VGS=0 V
- 12 - ns VDD=400 V,
- 10 -
- 75 -
- 9 -
while VDSis rising from 0 to 80% V
oss
while VDSis rising from 0 to 80% V
oss
(BR)DSS
(BR)DSS
Final Data Sheet 6 Rev. 2.0, 2010-04-09
Page 7
600V CoolMOS™ E6 Power Transistor
Electrical characteristics
Table 7 Gate charge characteristics
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
gs
gd
g
plateau
- 2.8 - nC VDD=480 V, ID=3.5A,
- 12 -
- 23.4 -
- 5.4 - V
Table 8 Reverse diode characteristics
Parameter Symbol Values Unit Note /
Min. Typ. Max.
Diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
SD
rr
rr
rrm
- 0.9 - V VGS=0 V, IF=3.5A,
- 260 - ns VR=400 V, IF=3.5A,
- 2.5 - µC
- 18 - A
Test Condition
V
=0 to 10 V
GS
Test Condition
T
=25 °C
j
diF/dt=100 A/µs
(see table 22)
IPx60R520E6
Final Data Sheet 7 Rev. 2.0, 2010-04-09
Page 8
600V CoolMOS™ E6 Power Transistor
5 Electrical characteristics diagrams
Table 9
IPx60R520E6
Electrical characteristics diagrams
Power dissipation
TO-220
P
= f(TC) P
tot
Power dissipation
TO-220 FullPAK
= f(TC)
tot
Table 10
Max. transient thermal impedance
TO-220
Max. transient thermal impedance
TO-220 FullPAK
Z
=f(tp); parameter: D=tp/T Z
(thJC)
=f(tp); parameter: D=tp/T
(thJC)
Final Data Sheet 8 Rev. 2.0, 2010-04-09
Page 9
Table 11
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Safe operating area TC=25 °C
TO-220
I
=f(VDS); TC=25 °C; D=0; parameter t
D
Safe operating area TC=25 °C
TO-220 FullPAK
p
ID=f(VDS); TC=25 °C; D=0; parameter t
p
Table 12
Safe operating area TC=80 °C
TO-220
Safe operating area TC=80 °C
TO-220 FullPAK
ID=f(VDS); TC=80 °C; D=0; parameter t
p
ID=f(VDS); TC=80 °C; D=0; parameter t
p
Final Data Sheet 9 Rev. 2.0, 2010-04-09
Page 10
600V CoolMOS™ E6 Power Transistor
Electrical characteristics diagrams
Table 13
Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C
IPx60R520E6
ID=f(VDS); Tj=25 °C; parameter: V
GS
ID=f(VDS); Tj=125 °C; parameter: V
Table 14
Typ. drain-source on-state resistance Drain-source on-state resistance
GS
R
=f(ID); Tj=125 °C; parameter: V
DS(on)
GS
R
=f(Tj); ID=2.8 A; VGS=10 V
DS(on)
Final Data Sheet 10 Rev. 2.0, 2010-04-09
Page 11
600V CoolMOS™ E6 Power Transistor
Table 15
Typ. transfer characteristics Typ. gate charge
IPx60R520E6
Electrical characteristics diagrams
ID=f(VGS); VDS=20V
VGS=f(Q
), ID=3.5 A pulsed
gate
Table 16
Avalanche energy Drain-source breakdown voltage
EAS=f(Tj); ID=1.4 A; VDD=50 V V
=f(Tj); ID=0.25 mA
BR(DSS)
Final Data Sheet 11 Rev. 2.0, 2010-04-09
Page 12
Table 17
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Electrical characteristics diagrams
Typ. capacitances Typ. C
C=f(VDS); VGS=0 V; f=1 MHz E
OSS
=f(VDS)
stored energy
oss
Table 18
Forward characteristics of reverse diode
IF=f(VSD); parameter: T
j
Final Data Sheet 12 Rev. 2.0, 2010-04-09
Page 13
600V CoolMOS™ E6 Power Transistor
6 Test circuits
Table 19 Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load Switching time waveform
V
DS
V
DS
V
GS
V
GS
10%
90%
t
d(on)
t
r
t
on
t
d(off)
IPx60R520E6
Test circuits
t
f
t
off
Table 20 Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit Unclamped inductive waveform
I
D
V
DS
V
DS
I
D
Table 21 Test circuit and waveform for diode characteristics
Test circuit for diode characteristics Diode recovery waveform
I
D
R
G1
V
DS
$
@
$ %
)@
4
4
% %
;
V
D
% %;%
1 %
LL
1
" "
LL
%
LL
4
%
; 4
V
(BR)DS
V
DS
"
4
R
G2
RG1= R
G2
998
"
"
4
;
0*"
+*"
)@$@LL%
998
%
998
#
998
;57***//
Final Data Sheet 13 Rev. 2.0, 2010-04-09
Page 14
7 Package outlines
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Package outlines
Figure 1 Outlines TO-220, dimensions in mm/inches
Final Data Sheet 14 Rev. 2.0, 2010-04-09
Page 15
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Package outlines
Figure 2 Outlines TO-220 FullPAK, dimensions in mm/inches
Final Data Sheet 15 Rev. 2.0, 2010-04-09
Page 16
8 Revision History
CoolMOS E6 600V CoolMOS™ E6 Power Transistor
Revision History: 2010-04-09, Rev. 2.0
Previous Revision:
Revision Subjects (major changes since last revision)
2.0 Release of final data sheet
We Listen to Your Comments
600V CoolMOS™ E6 Power Transistor
IPx60R520E6
Revision History
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Your feedback will help us to continuously improve the quality of this document.
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Edition 2010-04-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Final Data Sheet 16 Rev. 2.0, 2010-04-09
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