Datasheet ipp030n10n3g_rev21 Datasheet

IPP030N10N3 G IPI030N10N3 G

OptiMOS™3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R

• Very lowon-resistance R

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1)for target application

• Ideal for high-frequency switching and synchronous rectification

Type IPP030N10N3 G IPI030N10N3 G

product (FOM)

DS(on)

Product Summary

V

DS

R

DS(on),max

I

D

100 V

3

100 A

mW

Package PG-TO220-3 PG-TO262-3 Marking 030N10N 030N10N

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

TC=25 °C

2)

TC=100 °C

Pulsed drain current

2)

Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature

I

D,pulse

E

AS

V

GS

P

tot

Tj, T

TC=25 °C ID=100 A, RGS=25 W

TC=25 °C

stg

Value

100 A 100 400

1000 mJ

±20 V 300 W

-55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

1)

J-STD20 and JESD22

2)

See figure 3

Rev. 2.1 page 1 2011-07-18

IPP030N10N3 G IPI030N10N3 G

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case Thermal resistance, junction - ambient

R

thJC

R

thJA

minimal footprint - - 62 6 cm2cooling area

3)

- - 0.5 K/W

- - 40

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID=1 mA

VDS=VGS, ID=275 µA VDS=100 V, VGS=0 V,

Tj=25 °C

100 - - V

2 2.7 3.5

- 0.1 1 µA

VDS=100 V, VGS=0 V, Tj=125 °C

Gate-source leakage current Drain-source on-state resistance

I R

GSS

DS(on)

VGS=20 V, VDS=0 V VGS=10 V, ID=100 A

VGS=6 V, ID=50 A

Gate resistance

Transconductance

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

R

G

g

fs

|VDS|>2|ID|R

ID=100 A

DS(on)max

,

- 10 100

- 1 100 nA

- 2.6 3

- 3.1 4.8

- 1.9 -

94 188 - S

mW

W

Rev. 2.1 page 2 2011-07-18

IPP030N10N3 G IPI030N10N3 G

Dynamic characteristics

Gate Charge Characteristics

Reverse Diode

4)

Parameter Symbol Conditions Unit

Values

min. typ. max.

Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

4)

Gate to source charge Gate to drain charge Switching charge Gate charge total

C C C t t t t

Q Q Q Q

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

sw

g

VGS=0 V, VDS=50 V, f=1 MHz

VDD=50 V, VGS=10 V, ID=100 A, RG=1.6 W

VDD=50 V, ID=100 A, VGS=0 to 10 V

- 11100 14800 pF

- 1940 2580

- 69 -

- 34 - ns

- 58 -

- 84 -

- 28 -

- 49 - nC

- 28 -

- 43 -

- 155 206 Gate plateau voltage Output charge

Diode continous forward current Diode pulse current

Diode forward voltage

Reverse recovery time Reverse recovery charge

See figure 16 for gate charge parameter definition

V

plateau

Q

oss

I

S

I

S,pulse

V

SD

t

rr

Q

rr

VDD=50 V, VGS=0 V

TC=25 °C

VGS=0 V, IF=100 A, Tj=25 °C

VR=50 V, IF=IS,

diF/dt=100 A/µs

- 4.4 - V

- 205 273 nC

- - 100 A

- - 400

- 1 1.2 V

- 86 - ns

- 232 - nC

Rev. 2.1 page 3 2011-07-18

IPP030N10N3 G IPI030N10N3 G

1 Power dissipation 2 Drain current

P

=f(TC) ID=f(TC); V

tot

GS

≥10 V

350

300

120

100

250

80

200

[W]

tot

P

150

60

[A]

D

I

40

100

50

0

0 50 100 150 200

TC[°C]

20

0

0 50 100 150 200

TC[°C]

3 Safe operating area 4 Max. transient thermal impedance

ID=f(VDS); TC=25 °C; D =0 Z parameter: t

10

[A]

D

I

10

3

2

1

0

-1

10

p

limited by on-state resistance

0

10

10 ms

DC

1

100 µs

1 ms

10 µs

10

1 µs

2

10

3

VDS[V]

=f(tp)

thJC

parameter: D=tp/T

0

10

0.5

0.2

-1

10

[K/W]

thJC

Z

10

-2

10

0.1

0.05

0.02

0.01 single pulse

-5

10

-4

10

-3

10

-2

10

-1

10

0

tp[s]

Rev. 2.1 page 4 2011-07-18

IPP030N10N3 G IPI030N10N3 G

5 Typ. output characteristics 6 Typ. drain-source on resistance

ID=f(VDS); Tj=25 °C R parameter: V

300

250

200

150

[A]

D

I

100

50

GS

10 V

6 V

7.5 V

5.5 V

5 V

4.5 V

0

0 1 2

VDS[V]

=f(ID); Tj=25 °C

DS(on)

parameter: V

6

5

4

[mW]

3

DS(on)

R

2

1

0

0 40 80 120 160

GS

4.5 V

5 V

6 V

7.5 V 10 V

ID[A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|R parameter: T

300

250

200

150

[A]

D

I

100

50

j

DS(on)max

25 °C

175 °C

gfs=f(ID); Tj=25 °C

240

200

160

[S]

120

fs

g

80

40

0

0 2 4 6

VGS[V]

0

0 40 80 120 160

ID[A]

Rev. 2.1 page 5 2011-07-18

IPP030N10N3 G IPI030N10N3 G

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

=f(Tj); ID=100 A; VGS=10 V V

DS(on)

7

6

5

4

[mW]

DS(on)

3

R

98 %

typ

2

1

0

-60 -20 20 60 100 140 180

Tj[°C]

=f(Tj); VGS=V

GS(th)

parameter: I

4

3.5

3

2.5

[V]

2

GS(th)

V

1.5

1

0.5

0

-60 -20 20 60 100 140 180

DS

D

2750 µA

275 µA

Tj[°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f =1 MHz IF=f(VSD)

5

10

Ciss

Coss

10

4

3

C [pF]

2

10

1

10

0 20 40 60 80

Crss

VDS[V]

parameter: T

10

[A]

F

I

10

j

3

175 °C,98%

2

175 °C

1

0

25 °C

25 °C, 98%

0 0.5 1 1.5 2

VSD[V]

Rev. 2.1 page 6 2011-07-18

IPP030N10N3 G IPI030N10N3 G

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 W parameter: T

1000

100

[A]

AS

I

10

j(start)

1

1 10 100 1000

tAV[µs]

150 °C

100 °C

25 °C

VGS=f(Q

gate

parameter: V

10

8

6

[V]

GS

V

4

2

0

0 40 80 120 160

); ID=100 A pulsed

DD

20 V

Q

gate

80 V

50 V

[nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V

=f(Tj); ID=1 mA

BR(DSS)

110

105

[V]

100

BR(DSS)

V

95

90

-60 -20 20 60 100 140 180

Tj[°C]

V

GS

Q

V

gs(th)

Q

g(th)

Q

gs

g

Q

sw

Q

gd

Q

gate

Rev. 2.1 page 7 2011-07-18

PG-TO220-3: Outline

IPP030N10N3 G IPI030N10N3 G

Rev. 2.1 page 8 2011-07-18

PG-TO262-3

IPP030N10N3 G IPI030N10N3 G

Rev. 2.1 page 9 2011-07-18

IPP030N10N3 G IPI030N10N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

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For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.1 page 10 2011-07-18