Datasheet ipg20n06s2l-65_ds_10 Datasheet

IPG20N06S2L-65

OptiMOS® Power-Transistor

Features

• Dual N-channel Logic Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on),max

I

D

3)

55 V

65

20 A

PG-TDSON-8-4

mΩ

Type Package Marking

IPG20N06S2L-65 PG-TDSON-8-4 2N06L65

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

one channel active

Pulsed drain current
one channel active

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

=25 °C, unless otherwise specified

j

I

1)

1)

1, 3)

3)

D

I

D,pulse

E

AS

I

AS

V

GS

Value

TC=25 °C, VGS=10 V

T

=100 °C, VGS=10 V

C

-

ID=10A

-

14

20 A

80

40 mJ

15 A

- ±20 V

Power dissipation
one channel active

Operating and storage temperature

P

tot

T

, T

j

TC=25 °C

- -55 ... +175 °C

stg

43 W

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Rev. 1.0 page 1 2009-09-07

IPG20N06S2L-65

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

1)

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

- - - 3.5 K/W

minimal footprint - 100 -

6 cm

2

cooling area

2)

-60-

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

3)

I

DSS

=0 V, ID= 1 mA

VDS=VGS, ID=14 µA

VDS=55 V, VGS=0 V,
T

=25 °C

j

55 - - V

1.2 1.6 2.0

- 0.01 1 µA

Gate-source leakage current

3)

Drain-source on-state resistance

V

=55 V, VGS=0 V,

DS

T

=125 °C

j

I

GSS

3)

R

DS(on)

VGS=20 V, VDS=0 V

VGS=4.5 V, ID=7.5A

V

GS

2)

=10 V, ID=15A

- 1 100

- 1 100 nA

-6779

mΩ

-5365

Rev. 1.0 page 2 2009-09-07

IPG20N06S2L-65

y

g

3)

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

3)

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

1)

C

iss

V

=0 V, VDS=25 V,

3)

3)

1, 3)

C

C

t

t

t

t

Q

Q

Q

oss

rss

d(on)

r

d(off)

f

gs

gd

g

GS

f =1 MHz

V

=27.5 V,

DD

V

=10 V, ID=20 A,

GS

R

=11 Ω

G

=44 V, ID=20 A,

V

DD

V

=0 to 10 V

GS

- 315 410 pF

- 90 120

-3550

-2-ns

-3-

-10-

-7-

- 1.2 1.6 nC

- 3.5 5.3

- 9.4 12

Gate plateau voltage

V

plateau

- 3.9 - V

Reverse Diode

Diode continous forward current
one channel active

1)

I

S

- - 20 A

TC=25 °C

Diode pulse current
one channel active

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Specified by design. Not subject to production test.

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Per channel

1)

1)

1, 3)

I

S,pulse

V

SD

t

rr

Q

rr

VGS=0 V, IF=15 A,
T

=25 °C

j

VR=27.5 V, IF=IS,

di

/dt =100 A/µs

F

--80

- 1.0 1.3 V

-30-ns

-28-nC

Rev. 1.0 page 3 2009-09-07

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V; one channel active ID = f(TC); V

GS

GS

IPG20N06S2L-65

≥ 6 V; one channel active

45

25

40

35

20

30

15

25

[W]

tot

20

P

[A]

D

I

10

15

10

5

5

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

=f(VDS); TC=25°C; D =0; one channel active Z

D

parameter: t

p

100

1 µs

10 µs

10

[A]

D

I

100 µs

1 ms

1

1 10 100

VDS [V]

= f(tp)

thJC

parameter: D =tp/T

1

10

0.5

0

10

0.1

[K/W]

Z

thJC

10

10

-1

-2

10

0.05

0.01

single pulse

-6

10

-5

10

10

-3

-4

10

-2

10

-1

10

0

tp [s]

Rev. 1.0 page 4 2009-09-07

IPG20N06S2L-65

5 Typ. output characteristics

3)

ID = f(VDS); Tj = 25 °C R

parameter: V

80

60

40

[A]

D

I

20

0

GS

10 V

5 V

4.5 V

4 V

3.5 V

3 V

012345

VDS [V]

6 Typ. drain-source on-state resistance

= f(ID); Tj = 25 °C

DS(on)

parameter: V

160

140

120

]

Ω

[m

100

DS(on)

R

GS

3.5 V

4 V

4.5 V

5 V

80

60

40

0 20406080

ID [A]

3)

5.5 V

10 V

7 Typ. transfer characteristics

ID = f(VGS); V

parameter: T

80

60

40

[A]

D

I

20

0

1234567

= 6V R

DS

j

VGS [V]

3)

8 Typ. drain-source on-state resistance

= f(Tj); ID = 15 A; V

DS(on)

GS

= 10 V

3)

120

-55 °C

25 °C

100

]

80

175 °C

Ω

[m

DS(on)

R

60

40

20

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 5 2009-09-07

IPG20N06S2L-65

9 Typ. gate threshold voltage

V

parameter: I

GS(th)

= f(Tj); V

= V

GS

DS

D

2.5

2

1.5

[V]

GS(th)

V

1

14µA

0.5

0

-60 -20 20 60 100 140 180

Tj [°C]

140µA

10 Typ. Capacitances

C = f(VDS); V

4

10

3

10

C [pF]

2

10

1

10

0 5 10 15 20 25 30

= 0 V; f = 1 MHz

GS

3)

Ciss

Coss

Crss

VDS [V]

11 Typical forward diode characteristicis

3)

IF = f(VSD) I

parameter: T

10

10

[A]

F

I

10

j

2

1

25 °C

175 °C

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

12 Avalanche characteristics

= f(tAV)

A S

parameter: T

100

10

[A]

AV

I

0.1

j(start)

1

1 10 100 1000

tAV [µs]

3)

25 °C

100 °C

150 °C

Rev. 1.0 page 6 2009-09-07

IPG20N06S2L-65

13 Avalanche energy

E

= f(Tj) V

AS

parameter: I

D

3)

100

80

5 A

60

[mJ]

AS

E

40

10 A

15 A

20

14 Drain-source breakdown voltage

= f(Tj); ID = 1 mA

BR(DSS)

65

62

59

[V]

BR(DSS)

V

56

53

0

25 50 75 100 125 150 175

15 Typ. gate charge

V

= f(Q

GS

parameter: V

12

10

[V]

GS

V

); ID = 20 A pulsed

gate

DD

8

6

4

50

-60 -20 20 60 100 140 180

Tj [°C]

3)

11 V

44 V

16 Gate charge waveforms

V

GS

V

gs(th)

Tj [°C]

Q

g

2

0

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

0246810

Q

[nC]

gate

Rev. 1.0 page 7 2009-09-07

IPG20N06S2L-65

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2009

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2009-09-07

Revision History

IPG20N06S2L-65

Version

Revision 1.0

Date

07.09.2009

Changes

Final Data Sheet

Rev. 1.0 page 9 2009-09-07