Datasheet ipg20n04s4-09_ds_1_0 Datasheet

IPG20N04S4-09

V

DS(on),max

OptiMOS™-T2 Power-Transistor

Features

• DualN-channel Normal Level - Enhancement mode

• AEC Q101qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R I

D

4)

40

8.6 20 A

PG-TDSON-8-4

mW

Type Package Marking

IPG20N04S4-09 PG-TDSON-8-4 4N0409

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current one channel active

I

D

TC=25 °C, VGS=10 V

1)

Value

20 A

TC=100 °C,

20

80

145 mJ

15 A

Pulsed drain current

2)

one channel active

Avalanche energy, single pulse Avalanche current, single pulse

Gate source voltage

2, 4)

4)

I

D,pulse

E

AS

I

AS

V

GS

VGS=10 V

2)

-

ID=10A

-

- ±20 V

Power dissipation one channel active

Operating and storage temperature

P

tot

Tj, T

TC=25 °C

- -55 ... +175 °C

stg

54 W

Rev. 1.0 page 1 2010-10-08

IPG20N04S4-09

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case SMD version, device on PCB

2)

R

thJC

R

thJA

- - - 2.8 K/W minimal footprint - 100 -

6 cm2cooling area

3)

- 60 -

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage Gate thresholdvoltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

4)

I

DSS

=0 V, ID= 1 mA

VDS=VGS, ID= 22µA VDS=40 V, VGS=0 V,

Tj=25 °C

40 - - V

2.0 3.0 4.0

- 0.01 1 µA

Gate-source leakage current

4)

Drain-source on-state resistance

VDS=18 V, VGS=0 V, Tj=85 °C

I

GSS

4)

R

DS(on)

VGS=20 V, VDS=0 V VGS=10 V, ID=17 A

2)

- 1 100

- - 100 nA

- 7.9 8.6

mW

Rev. 1.0 page 2 2010-10-08

IPG20N04S4-09

Dynamic characteristics

Gate Charge Characteristics

Reverse Diode

4)

Parameter Symbol Conditions Unit

Values

min. typ. max.

2)

Input capacitance Output capacitance

4)

Reverse transfer capacitance Turn-on delaytime

Rise time Turn-off delay time Fall time

Gate to source charge Gate to drain charge Gate charge total

4)

2, 4)

C C

C

t t t t

Q Q Q

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

g

VGS=0 V, VDS=25 V, f=1 MHz

VDD=20 V, VGS=10 V, ID=20 A, RG=11 W

VDD=32 V, ID=20 A, VGS=0 to 10 V

- 1730 2250 pF

- 440 570

- 13 30

- 12 - ns

- 3 -

- 15 -

- 10 -

- 9.1 12 nC

- 2.9 6.7

- 21.7 28

Gate plateau voltage

Diode continous forward current one channel active

Diode pulse current

2)

one channel active

Diode forward voltage

Reverse recoverytime

Reverse recoverycharge

1)

Current is limited by bondwire; with an R

2)

Specified by design. Not subject to production test.

2)

2, 4)

V

plateau

2)

I

S

I

S,pulse

V

SD

t

rr

Q

rr

=2.8 K/W the chip is able to carry 61A at 25°C.

thJC

TC=25 °C

VGS=0 V, IF=17 A, Tj=25 °C

VR=20 V, IF=IS,

diF/dt=100 A/µs

- 5.3 - V

- - 20 A

- - 80

- 0.9 1.3 V

- 34 - ns

- 30 - nC

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Per channel

Rev. 1.0 page 3 2010-10-08

1 Power dissipation 2 Drain current

P

= f(TC); VGS≥ 6 V; one channel active ID= f(TC); V

tot

GS

IPG20N04S4-09

≥ 6 V; one channel active

60

50

25

20

40

15

[W]

30

tot

P

[A]

D

I

10

20

10

0

0 50 100 150 200

TC[°C]

5

0

0 50 100 150 200

TC[°C]

3 Safe operating area 4 Max. transient thermal impedance

ID=f(VDS); TC=25°C; D =0; one channel active Z parameter: t

100

10

[A]

D

I

0.1

p

1 µs

10 µs

100 µs

1

1 ms

0.1 1 10 100

VDS[V]

= f(tp)

thJC

parameter: D=tp/T

1

10

0.5

0

10

[K/W]

thJC

Z

10

0.1

0.05

-1

0.01

single pulse

-2

-5

-6

10

-3

-4

10

-2

10

-1

10

0

tp[s]

Rev. 1.0 page 4 2010-10-08

IPG20N04S4-09

5 Typ. output characteristics

4)

ID= f(VDS); Tj= 25 °C R parameter: V

80

60

[A]

40

D

I

20

0

GS

10 V

6.5 V7 V

6 V

5.5 V

5 V

0 2 4 6 8

VDS[V]

6 Typ. drain-source on-state resistance

= f(ID); Tj= 25 °C

DS(on)

parameter: V

45

35

]

W

[m

25

DS(on)

R

15

5

GS

5 V

5.5 V

6 V

0 20 40 60 80

ID[A]

4)

6 .5V

10 V

7 Typ. transfer characteristics

4)

ID= f(VGS); VDS= 6V R parameter: T

80

60

[A]

40

D

I

20

0

j

175 °C

25 °C

-55 °C

3 4 5 6 7

VGS[V]

8 Typ. drain-source on-state resistance

= f(Tj); ID= 17 A; VGS= 10 V

DS(on)

14

]

11

W

[m

DS(on)

R

8

5

-60 -20 20 60 100 140 180

Tj[°C]

4)

Rev. 1.0 page 5 2010-10-08

IPG20N04S4-09

9 Typ. gate threshold voltage

V

= f(Tj); VGS= V

GS(th)

parameter: I

4

3.5

3

[V]

2.5

GS(th)

V

2

1.5

1

-60 -20 20 60 100 140 180

D

DS

22µA

Tj[°C]

220µA

10 Typ. Capacitances

4)

C = f(VDS); VGS= 0 V; f = 1 MHz

4

10

3

10

C [pF]

2

10

1

10

0 5 10 15 20 25 30

VDS[V]

Ciss

Coss

Crss

11 Typical forward diode characteristicis

4)

IF =f(VSD) I parameter: T

10

[A]

10

F

I

10

j

2

1

25 °C

175 °C

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD[V]

12 Avalanche characteristics

= f(tAV)

A S

parameter: T

100

[A]

10

AV

I

j(start)

150 °C

1

1 10 100 1000

tAV[µs]

4)

100 °C

25 °C

Rev. 1.0 page 6 2010-10-08

IPG20N04S4-09

13 Avalanche energy

4)

EAS= f(Tj) V parameter: I

150

120

[mJ]

AS

E

D

90

60

30

14 Drain-source breakdown voltage

= f(Tj); ID= 1 mA

BR(DSS)

44

43

42

41

[V]

BR(DSS)

40

V

39

38

0

25 50 75 100 125 150 175

15 Typ. gate charge

VGS= f(Q parameter: V

12

10

[V]

GS

V

); ID= 20 A pulsed

gate

DD

8

6

4

37

-60 -20 20 60 100 140 180

Tj[°C]

4)

8 V

32 V

16 Gate charge waveforms

V

GS

V

gs(th)

Tj[°C]

Q

g

2

0

0 5 10 15 20 25

Q

[nC]

gate

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

Rev. 1.0 page 7 2010-10-08

IPG20N04S4-09

Published by

Infineon Technologies AG

81726 Munich, Germany

Infineon Technologies AG 2010

Legal Disclaimer

Information

the nearest Infineon Technologies Office (

www.infineon.com

).

Warnings

©

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to anyexamples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims anyand all warranties and liabilities of anykind, includingwithout limitation, warranties of non-infringement of intellectual property rights of any third party.

For further information on technology, delivery terms and conditions and prices, please contact

Due totechnical requirements, components may contain dangerous substances. For information on the types inquestion, please contact thenearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human bodyor to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2010-10-08

Revision History

IPG20N04S4-09

Version

Revision 1.0

Date

08.10.2010

Changes

Data Sheet revision 1.0

Rev. 1.0 page 9 2010-10-08