Datasheet ipd90p04p4-05_ds_10 Datasheet

IPD90P04P4-05

OptiMOS®-P2 Power-Transistor

Features

• P-channel - Normal Level - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on)

I

D

-40 V

4.7

mΩ

-90 A

PG-TO252-3-313

Type Package Marking

IPD90P04P4-05 PG-TO252-3-313 4P0405

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

1)

I

D

T
V

T
V

2)

I

D,pulse

E

AS

I

AS

V

GS

P

tot

T

j

, T

T
I

- -90 A

- ±20 V

T

- -55 ... +175 °C

stg

=25°C,

C

=-10V

GS

=100°C,

C

=-10V

GS

=25°C

C

=-45A

D

=25 °C

C

Value

-90 A

2)

-90

-360

60 mJ

125 W

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Rev. 1.0 page 1 2010-05-26

IPD90P04P4-05

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

2)

R

thJC

R

thJA

- - - 1.2 K/W

minimal footprint - - 62

6 cm

=25 °C, unless otherwise specified

j

2

cooling area

3)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0V, I

D

VDS=VGS, I

VDS=-32V, V
T

=25°C

j

V

=-32V, V

DS

T

=125°C

j

2)

= -1mA

=-250µA

D

=0V,

GS

=0V,

GS

-40 - - V

-2.0 -3.0 -4.0

- -0.08 -1 µA

- -20 -200

Gate-source leakage current

Drain-source on-state resistance

I

GSS

R

DS(on)VGS

VGS=-20V, V

=-10V, I

=0V

DS

=-90A

D

- - -100 nA

- 3.5 4.7

mΩ

Rev. 1.0 page 2 2010-05-26

IPD90P04P4-05

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

D

namic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

=0V, V

V

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f=1MHz

V

=-20V,

DD

V

=-10V, I

GS

=3.5Ω

R

G

=-32V, I

V

DD

V

=0 to -10V

GS

=-25V,

DS

=-90A,

D

=-90A,

D

- 7900 10300 pF

- 2800 3600

- 76 150

-3-ns

-8-

-7-

-14-

-4060nC

-2142

- 118 154

Gate plateau voltage

V

plateau

- -5.3 - V

Reverse Diode

2)

Diode continous forward current

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an R

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

2)

2)

I

S

I

S,pulse

V

SD

t

rr

Q

rr

= 1.2K/W the chip is able to carry -138A at 25°C.

thJC

T

=25°C

C

VGS=0V, I
T

=25°C

j

V

=-20V, I

R

di

/dt=-100A/µs

F

=-90A,

F

=-50A,

F

connection. PCB is vertical in still air.

- - -90 A

- - -360

- -1 -1.3 V

-56-ns

-56-nC

Rev. 1.0 page 3 2010-05-26

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≤ -6V ID = f(TC); V

GS

GS

IPD90P04P4-05

≤ -6V

140

100

120

80

100

[W]

tot

P

80

60

[A]

D

-I

60

40

40

20

20

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

= f(t

thJC

)

p

parameter: D=tp/T

1

10

1 µs

[A]

D

-I

100

10 µs

100 µs

1 ms

10

10

[K/W]

thJC

Z

0

0.5

0.1

-1

0.05

0.01

10

-2

10

single pulse

-3

1

0.1 1 10 100

-VDS [V]

10

10-610

-5

10-410

tp [s]

-3

-2

-1

10

10

10

0

Rev. 1.0 page 4 2010-05-26

IPD90P04P4-05

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

GS

= (ID); T

DS(on)

parameter: V

j

GS

= 25 °C

360

10V

8V

7V

270

[A]

180

D

-I

6V

90

5V

0

0123456

-VDS [V]

]

Ω

[m

DS(on)

R

24

21

18

15

12

-5V

-6V

9

6

3

-7V

-8V

-10V

0

0 90 180 270

-ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

I

= f(VGS); V

D

parameter: T

= -6V R

DS

j

= f(Tj); ID = -90 A; V

DS(on)

= -10 V

GS

360

270

[A]

180

D

-I

90

175 °C

25 °C

-55 °C

0

2345678

-VGS [V]

6

5

]

Ω

[m

4

DS(on)

R

3

2

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 5 2010-05-26

9 Typ. gate threshold voltage 10 Typ. capacitances

V

= f(Tj); V

GS(th)

parameter: -I

4

= V

GS

DS

D

C= f(VDS); V

5

10

= 0 V; f = 1 MHz

GS

IPD90P04P4-05

[V]

GS(th)

-V

3.5

2.5

4

10

250µA

2500µA

C [pF]

10

10

3

2

3

Ciss

Coss

Crss

2

1

1.5

-60 -20 20 60 100 140 180

Tj [°C]

10

0 5 10 15 20 25 30

-VDS [V]

11 Typical forward diode characteristicis 12 Drain-source breakdown voltage

IF = f(V

parameter: T

)V

SD

parameter: T

10

j

3

= f(Tj); ID = -1 mA

BR(DSS)

45

j(start)

44

43

10

2

42

41

[V]

[A]

F

-I

25 °C

10

10

1

0

175 °C

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-VSD [V]

40

BR(DSS)

-V

39

38

37

36

35

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 6 2010-05-26

13 Typ. gate charge 14 Gate charge waveforms

V

= f(Q

GS

parameter: V

10

); ID = -90 A pulsed

gate

DD

IPD90P04P4-05

9

8

-8V

7

6

[V]

5

GS

-V

4

3

2

1

0

0 20 40 60 80 100 120

Q

[nC]

gate

-32V

V

V

GS

GS

Q

Q

g

g

Q

Q

gate

gate

Q

Q

Q

gs

gs

Q

gd

gd

Rev. 1.0 page 7 2010-05-26

IPD90P04P4-05

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2010

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2010-05-26

Revision History

IPD90P04P4-05

Version

Revision 1.0

Date

21.05.2010

Changes

Final Data Sheet

Rev. 1.0 page 9 2010-05-26