Datasheet ipd90n04s3-h4 Datasheet

IPD90N04S3-H4

OptiMOS®-T Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on),max

I

D

40 V

4.3

90 A

PG-TO252-3-11

mΩ

Type Package Marking

IPD90N04S3-H4 PG-TO252-3-11 QN04H4

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

1)

I

D

TC=25 °C, VGS=10 V

T

V

2)

2)

I

D,pulse

E

AS

I

AS

V

GS

P

tot

T

, T

j

TC=25 °C

ID=45 A

-

- ±20 V

TC=25 °C

- -55 ... +175 °C

stg

=100 °C,

C

=10 V

GS

Value

90 A

2)

90

360

330 mJ

90 A

115 W

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Rev. 1.0 page 1 2008-08-01

IPD90N04S3-H4

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

2)

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

- - - 1.3 K/W

minimal footprint - - 62

6 cm

2

cooling area

3)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID= 1 mA

VDS=VGS, ID=65 µA

VDS=40 V, VGS=0 V,
T

=25 °C

j

40 - - V

2.1 3.0 4.0

--1µA

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

V

=40 V, VGS=0 V,

DS

T

=125 °C

j

2)

VGS=20 V, VDS=0 V

VGS=10 V, ID=90 A

- - 100

- - 100 nA

- 3.4 4.3 mΩ

Rev. 1.0 page 2 2008-08-01

IPD90N04S3-H4

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

V

=0 V, VDS=25 V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f =1 MHz

V

=20 V, VGS=10 V,

DD

I

=90 A, R

D

=32 V, ID=90 A,

V

DD

V

=0 to 10 V

GS

=3.5 Ω

G

- 3000 3900 pF

- 850 1100

- 130 200

-20-ns

-13-

-30-

-10-

-1824nC

-1218

-4660

Gate plateau voltage

V

plateau

- 5.6 - V

Reverse Diode

2)

Diode continous forward current

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an R

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

2)

2)

I

S

I

S,pulse

V

SD

t

rr

Q

rr

thJC

T

=25 °C

C

VGS=0 V, IF=90 A,
T

=25 °C

j

VR=20 V, IF=IS,

di

/dt =100 A/µs

F

= 1.3K/W the chip is able to carry 122A at 25°C.

connection. PCB is vertical in still air.

- - 90 A

- - 360

- 0.95 1.3 V

-35-ns

-35-nC

Rev. 1.0 page 3 2008-08-01

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V ID = f(TC); V

GS

GS

IPD90N04S3-H4

≥ 6 V

140

100

120

80

100

[W]

tot

P

80

60

[A]

D

I

60

40

40

20

20

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

1 µs

10 µs

100 µs

100

1 ms

[A]

D

I

10

1

0.1 1 10 100

VDS [V]

= f(tp)

thJC

parameter: D =tp/T

1

10

0

10

0.5

0.1

-1

[K/W]

thJC

Z

10

10

10

0.05

0.01

-2

single pulse

-3

-5

-6

10

10

10

10

-1

10

-3

10

-4

-2

10

0

tp [s]

Rev. 1.0 page 4 2008-08-01

IPD90N04S3-H4

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

GS

parameter: V

= f(ID); Tj = 25 °C

DS(on)

GS

360

10 V

320

7 V

280

240

6.5 V

200

[A]

D

I

160

6 V

120

80

40

5.5 V

5 V

0

02468

VDS [V]

20

18

5.5 V

16

14

]

Ω

12

[m

10

DS(on)

R

8

6

4

2

0 20 40 60 80 100 120

ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

6 V

6.5 V

7 V

10 V

I

= f(VGS); V

D

parameter: T

360

320

280

240

200

[A]

D

I

160

120

80

40

0

2345678

= 6V R

DS

j

-55 °C
25 °C

175 °C

VGS [V]

= f(Tj); ID = 90 A; V

DS(on)

GS

= 10 V

7

6

]

5

Ω

[m

DS(on)

4

R

3

2

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 5 2008-08-01

9 Typ. gate threshold voltage 10 Typ. capacitances

IPD90N04S3-H4

V

GS(th)

= f(Tj); V

parameter: I

4

3.5

3

[V]

2.5

GS(th)

V

2

1.5

1

-60 -20 20 60 100 140 180

= V

GS

DS

D

650µA

C = f(VDS); V

4

10

= 0 V; f = 1 MHz

GS

Ciss

C [pF]

65µA

10

10

3

Coss

Crss

2

0 5 10 15 20 25 30

Tj [°C]

VDS [V]

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(V

parameter: T

) I

SD

j

3

10

2

10

[A]

F

I

25 °C

175 °C

10

10

1

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

= f(tAV)

A S

parameter: T

100

[A]

10

AV

I

1

1 10 100 1000

j(start)

100 °C

150 °C

tAV [µs]

25 °C

Rev. 1.0 page 6 2008-08-01

IPD90N04S3-H4

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage

E

= f(Tj) V

AS

parameter: I

D

= f(Tj); ID = 1 mA

BR(DSS)

700

55

600

50

500

22.5 A

45

400

[V]

[mJ]

AS

E

300

45 A

200

100

90 A

0

25 75 125 175

BR(DSS)

V

40

35

30

-60 -20 20 60 100 140 180

Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

Tj [°C]

V

= f(Q

GS

gate

parameter: V

12

10

8

[V]

6

GS

V

4

2

0

0 1020304050

); ID = 90 A pulsed

DD

Q

gate

[nC]

8 V

32 V

V

GS

Q

g

V

gs(th)

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

Rev. 1.0 page 7 2008-08-01

IPD90N04S3-H4

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2008

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2008-08-01

Revision History

Version Date Changes

IPD90N04S3-H4

Rev. 1.0 page 9 2008-08-01