Datasheet ipd90n03s4l-03_ds_2_1 Datasheet

IPD90N03S4L-03

OptiMOS®-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on),max

I

D

30 V

3.3

90 A

PG-TO252-3-11

mΩ

Type Package Marking

IPD90N03S4L-03 PG-TO252-3-11 4N03L03

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

1)

I

D

TC=25 °C, VGS=10 V

T

V

2)

I

D,pulse

E

AS

I

AS

V

GS

P

tot

T

, T

j

TC=25 °C

ID=90 A

TC=25 °C

- ±16 V

TC=25 °C

- -55 ... +175 °C

stg

=100 °C,

C

=10 V

GS

Value

90 A

2)

90

360

85 mJ

90 A

94 W

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Rev. 2.1 page 1 2010-03-08

IPD90N03S4L-03

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

2)

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 62

2

cooling area

6 cm

3)

- - 1.6 K/W

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID= 1 mA

VDS=VGS, ID=45 µA

VDS=30 V, VGS=0 V,
T

=25 °C

j

30 - - V

1.0 1.6 2.2

- 0.01 1 µA

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

V

=30 V, VGS=0 V,

DS

T

=125 °C

j

V

DS

T

=85 °C

j

2)

=18 V, VGS=0 V,

2)

VGS=16 V, VDS=0 V

VGS=4.5 V, ID=45 A

V

=10 V, ID=90 A

GS

- 10 1000

-560

- 1 100 nA

- 3.4 4.4

mΩ

- 2.5 3.3

Rev. 2.1 page 2 2010-03-08

IPD90N03S4L-03

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

V

=0 V, VDS=25 V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f =1 MHz

V

=15 V, VGS=10 V,

DD

I

=90 A, R

D

=24 V, ID=90 A,

V

DD

V

=0 to 10 V

GS

=3.5 Ω

G

- 4000 5100 pF

- 1000 1300

- 53 100

-9-ns

-6-

-37-

-7-

-1215nC

-816

-6075

Gate plateau voltage

V

plateau

- 3.1 - V

Reverse Diode

Diode continous forward current

I

S

- - 90 A

2)

TC=25 °C

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an R

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2)

2)

I

S,pulse

V

t

rr

Q

thJC

SD

rr

VGS=0 V, IF=90 A,
T

=25 °C

j

VR=15 V, IF=IS,

di

/dt =100 A/µs

F

= 1.6K/W the chip is able to carry 129A at 25°C.

- - 360

0.6 0.9 1.3 V

-60-ns

-50-nC

Rev. 2.1 page 3 2010-03-08

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V ID = f(TC); V

GS

GS

IPD90N03S4L-03

≥ 6 V

100

100

90

80

80

70

[W]

tot

P

60

50

40

[A]

D

I

60

40

30

20

20

10

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

1 µs

10 µs

[A]

D

I

100

1 ms

100 µs

10

1

0.1 1 10 100

VDS [V]

= f(tp)

thJC

parameter: D =tp/T

1

10

0.5

0

10

0.1

0.05

-1

[K/W]

10

thJC

Z

10

10

-2

-3

10

0.01

single pulse

-6

10

-5

10

10

-1

10

-3

10

-4

-2

10

0

tp [s]

Rev. 2.1 page 4 2010-03-08

IPD90N03S4L-03

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

GS

parameter: V

= f(ID); Tj = 25 °C

DS(on)

GS

[A]

D

I

280

240

200

160

120

80

10 V

5 V

4.5 V

4 V

3.5 V

3 V

]

Ω

[m

DS(on)

R

12

11

10

3 V

3.5 V

9

8

7

6

5

4

40

3

2.5 V

0

01234

VDS [V]

2

0 306090120

ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

4 V

4.5 V

5 V

10 V

I

= f(VGS); V

D

parameter: T

280

240

200

160

[A]

D

I

120

80

40

0

12345

= 6V R

DS

j

-55 °C

25 °C

175 °C

VGS [V]

= f(Tj); ID = 90 A; V

DS(on)

GS

= 10 V

5

4

]

Ω

[m

3

DS(on)

R

2

1

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 2.1 page 5 2010-03-08

9 Typ. gate threshold voltage 10 Typ. capacitances

IPD90N03S4L-03

V

GS(th)

= f(Tj); V

parameter: I

2

1.75

1.5

1.25

[V]

1

GS(th)

V

0.75

0.5

0.25

0

-60 -20 20 60 100 140 180

= V

GS

DS

D

450 µA

45 µA

C = f(VDS); V

4

10

3

10

= 0 V; f = 1 MHz

GS

Ciss

Coss

C [pF]

2

10

Crss

1

10

0 5 10 15 20 25 30

Tj [°C]

VDS [V]

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(V

parameter: T

) I

SD

j

3

10

2

10

[A]

F

I

25 °C

10

10

1

175 °C

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

= f(tAV)

A S

parameter: T

100

[A]

10

AV

I

1

1 10 100 1000

j(start)

100 °C

150 °C

tAV [µs]

25 °C

Rev. 2.1 page 6 2010-03-08

IPD90N03S4L-03

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage

E

= f(Tj) V

AS

parameter: I

D

= f(Tj); ID = 1 mA

BR(DSS)

400

350

300

22.5 A

34

33

32

250

[V]

200

[mJ]

AS

E

45 A

150

100

90 A

50

0

25 75 125 175

31

BR(DSS)

V

30

29

28

-55 -15 25 65 105 145

Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

Tj [°C]

V

= f(Q

GS

gate

parameter: V

10

9

8

7

6

[V]

5

GS

V

4

3

2

1

0

0 20406080

); ID = 90 A pulsed

DD

Q

gate

6 V

[nC]

24 V

V

GS

Q

g

V

gs(th)

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

Rev. 2.1 page 7 2010-03-08

IPD90N03S4L-03

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2010

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 2.1 page 8 2010-03-08

Revision History

IPD90N03S4L-03

Version

Rev 2.0

Rev 2.1

Date

09.03.2007

08.03.2010

Changes

Final data sheet

Update of RDSon

Rev. 2.1 page 9 2010-03-08