Datasheet ipd70p04p4-09_ds_10 Datasheet

IPD70P04P4-09

OptiMOS®-P2 Power-Transistor

Features

• P-channel - Normal Level - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on)

I

D

-40 V

8.9

-73 A

PG-TO252-3-313

mΩ

Type Package Marking

IPD70P04P4-09 PG-TO252-3-313 4P0409

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

T V

1)

I

D,pulse

E

AS

I

AS

V

GS

P

tot

T

j

, T

T I

- -73 A

- ±20 V

T

- -55 ... +175 °C

stg

=25°C,

C

=-10V

GS

=100°C,

C

=-10V

GS

=25°C

C

=-36A

D

=25 °C

C

Value

-73 A

1)

-52

-292

24 mJ

75 W

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Rev. 1.0 page 1 2010-05-26

IPD70P04P4-09

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

1)

R

thJC

R

thJA

- - - 2 K/W

minimal footprint - - 62

6 cm

=25 °C, unless otherwise specified

j

2

cooling area

2)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

-V

GS(th)VDS=VGS

I

DSS

=0V, I

D

, I

VDS=-32V, V T

=25°C

j

V

=-32V, V

DS

T

=125°C

j

2)

= -1mA

=-120µA

D

=0V,

GS

=0V,

GS

-40 - - V

2.0 3.0 4.0

- -0.04 -1 µA

- -20 -200

Gate-source leakage current

Drain-source on-state resistance

I

GSS

R

DS(on)VGS

VGS=-20V, V

=-10V, I

=0V

DS

=-70A

D

- - -100 nA

- 6.4 8.9

mΩ

Rev. 1.0 page 2 2010-05-26

IPD70P04P4-09

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

D

namic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

1)

C

iss

=0V, V

V

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

1)

Q

gs

Q

gd

Q

g

GS

f=1MHz

V

=-20V,

DD

V

=-10V, I

GS

=3.5Ω

R

G

=-32V, I

V

DD

V

=0 to -10V

GS

=-25V,

DS

=-73A,

D

=-70A,

D

- 3700 4810 pF

- 1400 1820

-4080

-19-ns

-12-

-24-

-31-

-2026nC

-1020

-5470

Gate plateau voltage

V

plateau

- -5.4 - V

Reverse Diode

1)

Diode continous forward current

Diode pulse current

1)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Defined by design. Not subject to production test.

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

1)

I

S

I

S,pulse

V

SD

t

rr

Q

T

=25°C

C

VGS=0V, I T

=25°C

j

V

=-20V, I

R

di

/dt=-100A/µs

rr

F

=-70A,

F

=-50A,

F

connection. PCB is vertical in still air.

- - -73 A

- - -292

- -1 -1.3 V

-50-ns

-50-nC

Rev. 1.0 page 3 2010-05-26

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≤ -6V ID = f(TC); V

GS

IPD70P04P4-09

= -10V

80

60

[W]

40

tot

P

20

0

0 50 100 150 200

TC [°C]

80

60

[A]

40

D

-I

20

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0, SMD Z

D

parameter: t

p

1000

= f(t

thJC

)

p

parameter: D=tp/T

1

10

[A]

D

-I

100

1 µs

10 µs

100 µs

1 ms

10

[K/W]

10

thJC

Z

0

0.5

0.1

0.05

-1

0.01

10

single pulse

-2

10

-3

1

0.1 1 10 100

-VDS [V]

10

-6

10

0

-1

-2

-3

-4

-5

tp [s]

Rev. 1.0 page 4 2010-05-26

IPD70P04P4-09

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: -V

GS

= (ID); T

DS(on)

parameter: V

j

GS

= 25 °C

280

10V

210

[A]

140

D

-I

70

0

0123456

8V

-VDS [V]

7V

6V

5V

25

20

]

Ω

[m

15

DS(on)

R

10

5

0 70 140 210 280

6V5V

7V

-ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

I

= f(VGS); V

D

parameter: T

= -6V R

DS

j

= f(Tj); ID = -70 A; V

DS(on)

= -10 V

GS

8V

10V

280

210

[A]

140

D

-I

70

175 °C

25 °C

-55 °C

0

2345678

-VGS [V]

11

10

9

]

Ω

8

[m

DS(on)

7

R

6

5

4

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 5 2010-05-26

9 Typ. gate threshold voltage 10 Typ. capacitances

V

= f(Tj); V

GS(th)

parameter: -I

4

3.5

3

= V

GS

DS

D

1200µA

C= f(VDS); V

5

10

4

10

= 0 V; f = 1 MHz

GS

IPD70P04P4-09

Ciss

[V]

GS(th)

-V

2.5

120µA

10

C [pF]

3

2

10

1.5

1

-60 -20 20 60 100 140 180

Tj [°C]

10

0 5 10 15 20 25 30

-VDS [V]

11 Typical forward diode characteristicis 12 Drain-source breakdown voltage

I

= f(V

F

parameter: T

) V

SD

j

3

10

BR(DSS)

45

44

43

= f(Tj); I

= -1 mA

D

Coss

Crss

10

2

42

41

[V]

[A]

F

-I

25 °C

10

1

0

175 °C

0 0.4 0.8 1.2 1.6

-VSD [V]

40

BR(DSS)

-V

39

38

37

36

35

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 6 2010-05-26

13 Typ. gate charge 14 Gate charge waveforms

V

= f(Q

GS

parameter: V

[V]

GS

-V

12

10

); I

gate

= -73 A pulsed

D

DD

-8V

-32V

V

GS

Q

g

8

6

4

2

IPD70P04P4-09

Q

gate

0

0 102030405060

Q

[nC]

gate

Q

gs

Q

gd

Rev. 1.0 page 7 2010-05-26

IPD70P04P4-09

Published by Infineon Technologies AG 81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2010-05-26

Revision History

IPD70P04P4-09

Version

1.0

Date

21.05.2010

Changes

Final Data Sheet

Rev. 1.0 page 9 2010-05-26