Datasheet ipd70n10s3-12_ds_1_1 Datasheet

IPD70N10S3-12

V

OptiMOS

®

-T Power-Transistor

Features

• N-channel- Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on),max

I

D

100

11.1

PG-TO252-3-11

mW

70 A

Type Package Marking

IPD70N10S3-12 PG-TO252-3-11 QN1012

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current Avalanche energy, single pulse

1)

Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature

I

D

I

D,pulse

E

AS

I

AS

V

GS

P

tot

Tj, T

TC=25°C, VGS=10V

TC=100°C, VGS=10V

TC=25°C ID=35A

TC=25 °C

stg

1)

Value

70 A

48

280 410 mJ

70 A ±20 V 125 W

-55 ...+175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Rev. 1.1 page 1 2011-10-06

IPD70N10S3-12

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case SMD version, device on PCB

1)

R

thJC

R

thJA

minimal footprint - - 62 6 cm2cooling area

2)

- - 1.2 K/W

- - 40

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0V, ID= 1mA

VDS=VGS, ID=83µA VDS=80V, VGS=0V,

Tj=25°C

100 - - V

2.0 3.0 4.0

- 0.01 0.1 µA

Gate-source leakage current Drain-source on-state resistance

I R

GSS

DS(on)

VDS=80V, VGS=0V, Tj=125°C

1)

VGS=20V, VDS=0V VGS=10V, ID=70A

- 0.1 10

- - 100 nA

- 9.2 11.1

mW

Rev. 1.1 page 2 2011-10-06

IPD70N10S3-12

Dynamic characteristics

Gate Charge Characteristics

Reverse Diode

2)

connection. PCB is vertical in still air.

Parameter Symbol Conditions Unit

Values

min. typ. max.

1)

Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

1)

Gate to source charge Gate to drain charge Gate charge total

C C

C

t t t t

Q Q Q

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

g

VGS=0V, VDS=25V, f=1MHz

VDD=20V, VGS=10V, ID=70A, RG=3.5W

VDD=80V, ID=70A, VGS=0 to 10V

- 3350 4355 pF

- 940 1222

- 105 158

- 17 - ns

- 8 -

- 25 -

- 8 -

- 18 23 nC

- 16 24

- 51 65

Gate plateau voltage

Diode continous forward current

V

plateau

1)

I

S

- 5.5 - V

- - 70 A

TC=25°C

Diode pulse current

1)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Defined by design. Not subject to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2(one layer, 70 µm thick) copper area for drain

1)

I

S,pulse

V

SD

t

rr

Q

rr

VGS=0V, IF=70A, Tj=25°C

VR=50V, IF=IS,

diF/dt=100A/µs

- - 280

0.6 1 1.2 V

- 100 - ns

- 265 - nC

Rev. 1.1 page 3 2011-10-06

1 Power dissipation 2 Drain current

P

= f(TC); VGS≥ 6 V ID= f(TC); V

tot

GS

IPD70N10S3-12

≥ 6 V

140

120

80

70

60

100

50

80

[W]

tot

P

60

[A]

40

D

I

30

40

20

0

0 50 100 150 200

TC[°C]

10

0

0 50 100 150 200

TC[°C]

3 Safe operating area 4 Max. transient thermal impedance

ID= f(VDS); TC= 25 °C; D = 0 Z parameter: t

1000

100

[A]

D

I

p

1 µs

10 µs

100 µs

1 ms

10

1

0.1 1 10 100

VDS[V]

= f(tp)

thJC

parameter: D=tp/T

1

10

0

10

0.5

0.1

-1

[K/W]

10

0.05

thJC

Z

10

-2

-3

10

0.01

single pulse

-6

10

-5

10

-3

-4

10

-2

10

-1

10

0

tp[s]

Rev. 1.1 page 4 2011-10-06

IPD70N10S3-12

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID= f(VDS); Tj= 25 °C R parameter: V

280

240

200

160

[A]

D

I

120

80

40

0

GS

10 V

7 V

6.5 V

6 V

5.5V

5V

0 1 2 3 4 5

VDS[V]

= f(ID); Tj= 25 °C

DS(on)

parameter: V

35

25

]

W

[m

DS(on)

R

15

5

0 20 40 60 80 100 120

GS

5.5 V

ID[A]

6 V

6.5 V

7 V

10 V

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

ID= f(VGS); VDS= 6V R parameter: T

250

200

150

[A]

D

I

100

50

j

-55 °C

25 °C

175 °C

0

3 4 5 6 7

VGS[V]

= f(Tj); ID= 70 A; VGS= 10 V

DS(on)

25

20

]

W

[m

15

DS(on)

R

10

5

-60 -20 20 60 100 140 180

Tj[°C]

Rev. 1.1 page 5 2011-10-06

9 Typ. gate threshold voltage 10 Typ. capacitances

IPD70N10S3-12

V

= f(Tj); VGS= V

GS(th)

parameter: I

4

3.5

3

[V]

2.5

GS(th)

V

2

1.5

1

-60 -20 20 60 100 140 180

DS

D

400 µA

C =f(VDS); VGS= 0 V; f = 1 MHz

4

10

3

10

Ciss

Coss

C [pF]

80 µA

2

10

1

Crss

0 5 10 15 20 25 30

Tj[°C]

VDS[V]

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(VSD) I parameter: T

10

[A]

F

I

10

j

3

2

25 °C

1

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

175 °C

VSD[V]

= f(tAV)

A S

parameter: T

100

[A]

10

AV

I

1

0.1 1 10 100 1000

j(start)

150 °C

tAV[µs]

25 °C

100 °C

Rev. 1.1 page 6 2011-10-06

IPD70N10S3-12

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage

EAS= f(Tj) V parameter: I

900

800

700

600

500

[mJ]

AS

400

E

300

200

100

D

17.5 A

35 A

70 A

0

25 75 125 175

Tj[°C]

= f(Tj); ID= 1 mA

BR(DSS)

115

110

105

[V]

BR(DSS)

V

100

95

90

-55 -15 25 65 105 145

Tj[°C]

15 Typ. gate charge 16 Gate charge waveforms

VGS= f(Q parameter: V

10

[V]

GS

V

); ID= 70 A pulsed

gate

DD

9

8

20 V 80V

7

6

5

4

3

2

1

0

0 10 20 30 40 50

Q

[nC]

gate

V

GS

Q

V

gs(th)

Q

g(th)

Q

gs

g

Q

sw

Q

gd

Q

gate

Rev. 1.1 page 7 2011-10-06

IPD70N10S3-12

Published by

Infineon Technologies AG

81726 Munich, Germany

Infineon Technologies AG 2007

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Information

www.infineon.com

Warnings

©

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including

without limitation warranties of non‑infringement of intellectual property rights of any third party.

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

).

Rev. 1.1 page 8 2011-10-06

Revision History

IPD70N10S3-12

Version

Revision 1.1

Date

03.06.2011

Changes Update if Idss

Rev. 1.1 page 9 2011-10-06