Datasheet ipd600n25n3grev2.3 Datasheet

IPD600N25N3 G

OptiMOS

TM

3 Power-Transistor

Features

• N-channel, normal level

• Excellent gate charge x R

DS(on)

product (FOM)

• Very low on-resistance R

DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1)

for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

TC=25 °C

25 A

TC=100 °C

18

Pulsed drain current

2)

I

D,pulse

TC=25 °C

100

Avalanche energy, single pulse

E

AS

ID=25 A, RGS=25 W

210 mJ

Reverse diode dv/dt dv/dt 10 kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

P

tot

TC=25 °C

136 W

Operating and storage temperature

Tj, T

stg

-55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

2)

See figure 3

Value

1)

J-STD20 and JESD22

VDS250VR

DS(on),max

60

mW

ID25

A

Product Summary

Type

IPD600N25N3 G

Package

PG-TO252-3

Marking

600N25N

Rev. 2.3 page 1 2011-07-14

IPD600N25N3 G

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 1.1 K/W

R

thJA

minimal footprint - - 75

6 cm2 cooling area

3)

- - 50

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSSVGS

=0 V, ID=1 mA

250 - - V

Gate threshold voltage

V

GS(th)

VDS=VGS, ID=90 µA

2 3 4

Zero gate voltage drain current

I

DSS

VDS=200 V, VGS=0 V, Tj=25 °C

- 0.1 1 µA

VDS=200 V, VGS=0 V, Tj=125 °C

- 10 100

Gate-source leakage current

I

GSS

VGS=20 V, VDS=0 V

- 1 100 nA

Drain-source on-state resistance

R

DS(on)

VGS=10 V, ID=25 A

- 51 60

mW

Gate resistance

R

G

- 2.5 -

W

Transconductance

g

fs

|VDS|>2|ID|R

DS(on)max

,

ID=25 A

24 47 - S

Values

Thermal resistance, junction ambient

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

Rev. 2.3 page 2 2011-07-14

IPD600N25N3 G

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 1770 2350 pF

Output capacitance

C

oss

- 101 134

Reverse transfer capacitance

C

rss

- 3 -

Turn-on delay time

t

d(on)

- 10 - ns

Rise time

t

r

- 10 -

Turn-off delay time

t

d(off)

- 22 -

Fall time

t

f

- 8 -

Gate Charge Characteristics

4)

Gate to source charge

Q

gs

- 8 - nC

Gate to drain charge

Q

gd

- 2 -

Switching charge

Q

sw

- 5 -

Gate charge total

Q

g

- 22 29

Gate plateau voltage

V

plateau

- 4.3 - V

Output charge

Q

oss

VDD=100 V, VGS=0 V

- 45 60 nC

Reverse Diode

Diode continous forward current

I

S

- - 25 A

Diode pulse current

I

S,pulse

- - 100

Diode forward voltage

V

SD

VGS=0 V, IF=25 A, Tj=25 °C

- 0.9 1.2 V

Reverse recovery time

t

rr

- 114 ns

Reverse recovery charge

Q

rr

- 700 - nC

4)

See figure 16 for gate charge parameter definition

VR=100 V, IF=12A, diF/dt=100 A/µs

TC=25 °C

Values

VGS=0 V, VDS=100 V, f=1 MHz

VDD=100 V, VGS=10 V, ID=12 A, RG=1.6 W

VDD=100 V, ID=12 A, VGS=0 to 10 V

Rev. 2.3 page 3 2011-07-14

IPD600N25N3 G

1 Power dissipation 2 Drain current

P

tot

=f(TC) ID=f(TC); V

GS

≥10 V

3 Safe operating area 4 Max. transient thermal impedance

ID=f(VDS); TC=25 °C; D=0 Z

thJC

=f(tp)

parameter: t

p

parameter: D=tp/T

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10-510-410-310-210-110

0

10

-2

10

-1

10

0

Z

thJC

[K/W]

tp[s]

0

20

40

60

80

100

120

140

160

0 50 100 150 200

P

tot

[W]

TC[°C]

0

10

20

30

0 50 100 150 200

I

D

[A]

TC[°C]

1 µs

10 µs

100 µs

1 ms

10 ms

DC

10-110010110210

3

10

-1

10

0

10

1

10

2

10

3

I

D

[A]

VDS[V]

Rev. 2.3 page 4 2011-07-14

IPD600N25N3 G

5 Typ. output characteristics 6 Typ. drain-source on resistance

ID=f(VDS); Tj=25 °C R

DS(on)

=f(ID); Tj=25 °C

parameter: V

GS

parameter: V

GS

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|R

DS(on)max

gfs=f(ID); Tj=25 °C

parameter: T

j

4.5 V

5 V

7 V

10 V

0

20

40

60

80

100

0 10 20 30

R

DS(on)

[mW]

ID[A]

25 °C

175 °C

0

10

20

30

40

0 2 4 6 8

I

D

[A]

VGS[V]

0

10

20

30

40

50

60

70

80

0 25 50 75

g

fs

[S]

ID[A]

4.5 V

5 V

7 V

10 V

0

10

20

30

40

50

60

0 1 2 3 4 5

I

D

[A]

VDS[V]

Rev. 2.3 page 5 2011-07-14

IPD600N25N3 G

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R

DS(on)

=f(Tj); ID=25 A; VGS=10 V V

GS(th)

=f(Tj); VGS=V

DS

parameter: I

D

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)

parameter: T

j

typ

98%

0

20

40

60

80

100

120

140

160

180

200

-60 -20 20 60 100 140 180

R

DS(on)

[mW]

Tj[°C]

90 µA

900 µA

0

0.5

1

1.5

2

2.5

3

3.5

4

-60 -20 20 60 100 140 180

V

GS(th)

[V]

Tj[°C]

Ciss

Coss

Crss

10

1

10

2

10

3

10

4

0 40 80 120 160

C [pF]

VDS[V]

25 °C

175 °C

25°C, 98%

175°C, 98%

10

0

10

1

10

2

10

3

0 0.5 1 1.5 2

I

F

[A]

VSD[V]

Rev. 2.3 page 6 2011-07-14

IPD600N25N3 G

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 W

VGS=f(Q

gate

); ID=12 A pulsed

parameter: T

j(start)

parameter: V

DD

15 Drain-source breakdown voltage 16 Gate charge waveforms

V

BR(DSS)

=f(Tj); ID=1 mA

50 V

125 V

200 V

0

2

4

6

8

10

0 10 20 30

V

GS

[V]

Q

gate

[nC]

220

230

240

250

260

270

280

290

-60 -20 20 60 100 140 180

V

BR(DSS)

[V]

Tj[°C]

V

GS

Q

gate

V

gs(th)

Q

g(th)Qgs

Q

gdQsw

Q

g

25 °C

100 °C

125 °C

1

10

100

1 10 100 1000

I

AS

[A]

tAV[µs]

Rev. 2.3 page 7 2011-07-14

IPD600N25N3 G

PG-TO252-3: Outline

Rev. 2.3 page 8 2011-07-14

IPD600N25N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

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For further information on technology, delivery terms and conditions and prices, please

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on the types in question, please contact the nearest Infineon Technologies Office.

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reasonably be expected to cause the failure of that life-support device or system or to affect

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Rev. 2.3 page 9 2011-07-14