Datasheet ipd50n06s2-14_green_ds_1_1 Datasheet

IPD50N06S2-14

OptiMOS® Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

• 100% Avalanche tested

Type Package Marking

IPD50N06S2-14 PG-TO252-3-11 PN0614

Product Summary

V

DS

R

DS(on),max

I

D

(SMD version) 14.4

55 V

mΩ

50 A

PG-TO252-3-11

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

TC=25 °C, VGS=10 V

T

V

2)

I

D,pulse

E

AS

V

GS

P

tot

T

, T

j

TC=25 °C

ID=50A

TC=25 °C

stg

=100 °C,

C

=10 V

GS

Value

1)

50

2)

49

A

200

240 mJ

±20 V

136 W

-55 ... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Rev. 1.1 page 1 2008-10-21

IPD50N06S2-14

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ­ambient, leaded

SMD version, device on PCB

Electrical characteristics, at T

=25 °C, unless otherwise specified

j

R

thJC

R

thJA

R

thJA

minimal footprint - - 75

6 cm

2

cooling area

3)

- - 1.1 K/W

- - 100

--50

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

GS(th)

=0 V, ID= 1 mA

VDS=VGS, ID=80 µA

55 - - V

2.1 3.0 4.0

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

I

I

R

DSS

GSS

DS(on)

VDS=55 V, VGS=0 V,
T

=25 °C

j

V

=55 V, VGS=0 V,

DS

T

=125 °C

j

2)

VGS=20 V, VDS=0 V

VGS=10 V, ID=32 A,

- 0.01 1 µA

- 1 100

- 1 100 nA

- 10.8 14.4 mΩ

Rev. 1.1 page 2 2008-10-21

IPD50N06S2-14

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

V

=0 V, VDS=25 V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f =1 MHz

V

=30 V, VGS=10 V,

DD

I

=50 A, R

D

=44 V, ID=50 A,

V

DD

V

=0 to 10 V

GS

=7.5 Ω

G

- 1485 - pF

- 464 -

- 167 -

-13-ns

-29-

-30-

-19-

- 8 11 nC

-1624

-3952

Gate plateau voltage

V

plateau

- 5.4 - V

Reverse Diode

Diode continous forward current

I

S

- - 50 A

2)

TC=25 °C

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an RthJC=1.1 K/W the chip is able to carry 69 A. For detailed

information see Application Note ANPS071E at www.infineon.com/optimos

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2)

2)

I

S,pulse

V

SD

t

rr

Q

rr

VGS=0 V, IF=50 A,
T

=25 °C

j

VR=30 V, IF=IS,

di

/dt =100 A/µs

F

VR=30 V, IF=IS,

di

/dt =100 A/µs

F

- - 200

- 1 1.3 V

-45-ns

-74-nC

Rev. 1.1 page 3 2008-10-21

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

160

≥ 6 V ID = f(TC); V

GS

GS

IPD50N06S2-14

≥ 10 V

140

120

50

40

100

[W]

tot

P

80

60

30

[A]

D

I

20

40

10

20

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

[°C]

T

C

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

= f(tp)

thJC

parameter: D =tp/T

1000

100

100 µs

[A]

D

I

1 ms

10

1

0.1 1 10 100

VDS [V]

10 µs

1 µs

10

-1

[K/W]

10

thJC

Z

-2

10

-3

10

0

0.1

0.05

0.02

0.01

single pulse

0

-1

-2

-3

-4

-5

-6

10

-7

10

10

10

10

10

10

10

tp [s]

Rev. 1.1 page 4 2008-10-21

IPD50N06S2-14

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

GS

parameter: V

= (ID); Tj = 25 °C

DS(on)

GS

200

160

10 V

7 V

50

5.5 V

40

120

[A]

D

I

80

40

6.5 V

6 V

5.5 V

5 V

0

01234567

VDS [V]

]

Ω

[m

30

DS(on)

R

20

10

0 20406080100

ID [A]

7 Typ. transfer characteristics 8 Typ. Forward transconductance

6 V

6.5 V

7 V

10 V

I

= f(VGS); V

D

parameter: T

100

90

80

70

60

50

[A]

D

I

40

30

20

10

0

234567

= 6V g

DS

j

175 °C

25 °C

-55 °C

VGS [V]

= f(ID); Tj = 25°C

fs

parameter: g

80

70

60

50

[S]

40

fs

g

30

20

10

0

0 20406080100

fs

ID [A]

Rev. 1.1 page 5 2008-10-21

9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage

IPD50N06S2-14

R

= f(Tj) V

DS(ON)

GS(th)

= f(Tj); V

parameter: ID = 32 A; VGS = 10 V parameter: I

30

25

20

]

Ω

[m

15

DS(on)

R

10

5

0

-60 -20 20 60 100 140 180

Tj [°C]

4

3.5

3

[V]

2.5

GS(th)

V

2

1.5

1

-60 -20 20 60 100 140 180

= V

GS

DS

D

400 µA

80 µA

Tj [°C]

11 Typ. capacitances 12 Typical forward diode characteristicis

C = f(V

); V

= 0 V; f = 1 MHz IF = f(VSD)

GS

10

10

[pF]

DS

4

3

C

2

10

0 5 10 15 20 25 30

VDS [V]

Ciss

Coss

Crss

parameter: T

3

10

2

10

[A]

F

I

1

10

0

10

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

j

25 °C

175 °C

VSD [V]

Rev. 1.1 page 6 2008-10-21

13 Typical avalanche energy 14 Typ. gate charge

E

= f(Tj) V

AS

parameter: I

D

GS

= f(Q

); ID = 50 A pulsed

gate

IPD50N06S2-14

1000

12.5 A

800

12

10

8

600

[V]

[mJ]

AS

E

400

25 A

6

GS

V

4

200

50 A

0

25 50 75 100 125 150 175

Tj [°C]

2

0

0 10203040

Q

15 Typ. drain-source breakdown voltage 16 Gate charge waveforms

gate

11 V

44 V

[nC]

V

BR(DSS)

= f(Tj); ID = 1 mA

66

64

62

60

[V]

58

BR(DSS)

V

56

54

52

50

-60 -20 20 60 100 140 180

Tj [°C]

V

V

GS

GS

Q

Q

g

g

Q

Q

gate

gate

Q

Q

Q

gs

gs

Q

gd

gd

Rev. 1.1 page 7 2008-10-21

IPD50N06S2-14

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2008

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.1 page 8 2008-10-21

Revision History

IPD50N06S2-14

Version

Revision 1.1

Date

20.10.2008

Changes

Correction of RthJC from 3.4K/W
to 1.1K/W

Rev. 1.1 page 9 2008-10-21