Datasheet ipd35n10s3l-26_ds_1_1 Datasheet

IPD35N10S3L-26

V

OptiMOS

®

-T Power-Transistor

Features

• N-channel- Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on),max

I

D

100

26 35 A

PG-TO252-3-11

mW

Type Package Marking

IPD35N10S3L-26 PG-TO252-3-11 3N10L26

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current Avalanche energy, single pulse

1)

Avalanche current, single pulse Gate source voltage

2)

Power dissipation Operating and storage temperature

I

D

I

D,pulse

E

AS

I

AS

V

GS

P

tot

Tj, T

TC=25°C, VGS=10V

TC=100°C, VGS=10V

TC=25°C ID=17A

TC=25°C

stg

1)

Value

35 A

25

140 175 mJ

35 A

±20 V

71 W

-55 ...+175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Rev. 1.1 page 1 2011-10-06

IPD35N10S3L-26

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case SMD version, device on PCB

1)

R

thJC

R

thJA

minimal footprint - - 62 6 cm2cooling area

3)

- - 2.1 K/W

- - 40

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0V, ID= 1mA

VDS=VGS, ID=39µA VDS=80V, VGS=0V,

Tj=25°C

100 - - V

1.2 1.7 2.4

- 0.01 0.1 µA

Gate-source leakage current Drain-source on-state resistance

I R

GSS

DS(on)

VDS=80V, VGS=0V, Tj=125°C

1)

VGS=20V, VDS=0V VGS=4.5V, ID=35A VGS=10 V, ID=35 A

- 1 10

- - 100 nA

- 24.5 31.9

mW

- 20.0 24.0

Rev. 1.1 page 2 2011-10-06

IPD35N10S3L-26

Dynamic characteristics

Gate Charge Characteristics

Reverse Diode

3)

connection. PCB is vertical in still air.

Parameter Symbol Conditions Unit

Values

min. typ. max.

1)

Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

1)

Gate to source charge Gate to drain charge Gate charge total

C C

C

t t t t

Q Q Q

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

g

VGS=0V, VDS=25V, f=1MHz

VDD=20V, VGS=10V, ID=35A, RG=3.5W

VDD=80V, ID=35A, VGS=0 to 10V

- 2070 2700 pF

- 460 600

- 50 75

- 6 - ns

- 4 -

- 18 -

- 3 -

- 8 10 nC

- 5 8

- 30 39

Gate plateau voltage

Diode continous forward current

V

plateau

1)

I

S

- 3.7 - V

- - 35 A

TC=25°C

Diode pulse current

1)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Defined by design. Not subject to production test.

2)

Qualified with VGS= +20/-5V. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

1)

I

S,pulse

V

SD

t

rr

Q

rr

VGS=0V, IF=35A, Tj=25°C

VR=50V, IF=IS,

diF/dt=100A/µs

- - 140

0.6 1 1.2 V

- 79 - ns

- 150 - nC

Rev. 1.1 page 3 2011-10-06

1 Power dissipation 2 Drain current

P

= f(TC); VGS≥ 6 V ID= f(TC); V

tot

GS

IPD35N10S3L-26

≥ 6 V

80

40

70

60

30

50

[W]

40

tot

P

[A]

20

D

I

30

20

10

0

0 50 100 150 200

TC[°C]

0

0 50 100 150 200

TC[°C]

3 Safe operating area 4 Max. transient thermal impedance

ID= f(VDS); TC= 25 °C; D = 0 Z parameter: t

1000

100

[A]

D

I

p

100 µs

10

1 ms

1

0.1 1 10 100

VDS[V]

1 µs

10 µs

= f(tp)

thJC

parameter: D=tp/T

1

10

0.5

0

10

0.1

0.05

-1

[K/W]

10

thJC

Z

10

-2

-3

10

0.01

single pulse

-6

10

-5

10

-3

-4

10

-2

10

-1

10

0

tp[s]

Rev. 1.1 page 4 2011-10-06

IPD35N10S3L-26

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID= f(VDS); Tj= 25 °C R parameter: V

140

120

100

80

[A]

D

I

60

40

20

0

GS

10 V

5 V

4.5 V

4 V

3.5 V

3 V

0 1 2 3 4 5 6

VDS[V]

= f(ID); Tj= 25 °C

DS(on)

parameter: V

75

65

3 V

55

]

W

[m

45

DS(on)

R

35

25

15

0 20 40 60 80

GS

3.5 V

4 V

4.5 V

5 V

10 V

ID[A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

ID= f(VGS); VDS= 6V R parameter: T

60

40

[A]

D

I

20

0

j

175 °C

25 °C

-55 °C

1 2 3 4 5

VGS[V]

= f(Tj); ID= 30 A; VGS= 10 V

DS(on)

50

40

]

W

[m

30

DS(on)

R

20

10

-60 -20 20 60 100 140 180

Tj[°C]

Rev. 1.1 page 5 2011-10-06

9 Typ. gate threshold voltage 10 Typ. capacitances

IPD35N10S3L-26

V

= f(Tj); VGS= V

GS(th)

parameter: I

2.5

2

1.5

[V]

GS(th)

V

1

0.5

0

-60 -20 20 60 100 140 180

DS

D

200 µA

40 µA

C =f(VDS); VGS= 0 V; f = 1 MHz

4

10

3

10

Ciss

C [pF]

Coss

2

10

Crss

1

10

0 5 10 15 20 25 30

Tj[°C]

VDS[V]

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(VSD) I parameter: T

10

[A]

F

I

10

j

3

2

1

25 °C

175 °C

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD[V]

= f(tAV)

A S

parameter: T

100

10

[A]

AV

I

1

0.1

0.1 1 10 100 1000

j(start)

150 °C

tAV[µs]

25 °C

100 °C

Rev. 1.1 page 6 2011-10-06

IPD35N10S3L-26

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage

EAS= f(Tj) V parameter: I

400

350

300

250

[mJ]

200

AS

E

150

100

D

8 A

17 A

35 A

50

0

25 75 125 175

Tj[°C]

= f(Tj); ID= 1 mA

BR(DSS)

115

110

105

[V]

BR(DSS)

V

100

95

90

-55 -15 25 65 105 145

Tj[°C]

15 Typ. gate charge 16 Gate charge waveforms

VGS= f(Q parameter: V

10

[V]

GS

V

); ID= 35 A pulsed

gate

DD

9

8

20 V

80 V

7

6

5

4

3

2

1

0

0 5 10 15 20 25 30

Q

[nC]

gate

V

GS

Q

V

gs(th)

Q

g(th)

Q

gs

g

Q

sw

Q

gd

Q

gate

Rev. 1.1 page 7 2011-10-06

IPD35N10S3L-26

Published by

Infineon Technologies AG

81726 Munich, Germany

Infineon Technologies AG 2011

Legal Disclaimer

Information

www.infineon.com

Warnings

©

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including

without limitation warranties of non‑infringement of intellectual property rights of any third party.

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

).

Rev. 1.1 page 8 2011-10-06

Revision History

D,pulse

IPD35N10S3L-26

Version

Rev 1.0 Rev 1.1

Date

21.04.2008

17.05.2011

Changes final data sheet I

corrected

Rev. 1.1 page 9 2011-10-06