Datasheet ipd30n03s4l-14_ds_2_1 Datasheet

IPD30N03S4L-14

OptiMOS®-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Product Summary

V

DS

R

DS(on),max

I

D

30 V

13.6

30 A

PG-TO252-3-11

mΩ

Type Package Marking

IPD30N03S4L-14 PG-TO252-3-11 4N03L14

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

1)

I

D

TC=25 °C, VGS=10 V

T

V

2)

I

D,pulse

E

AS

I

AS

V

GS

P

tot

T

, T

j

TC=25 °C

ID=30 A

TC=25 °C

TC=25 °C

stg

=100 °C,

C

=10 V

GS

Value

30 A

2)

27

120

16 mJ

30 A

±16 V

31 W

-55 ... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Rev. 2.1 page 1 2008-04-18

IPD30N03S4L-14

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

2)

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 62

2

cooling area

6 cm

3)

- - 4.9 K/W

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0 V, ID= 1 mA

VDS=VGS, ID=10 µA

VDS=30 V, VGS=0 V,
T

=25 °C

j

30 - - V

1.0 1.5 2.2

- 0.01 1 µA

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

V

=30 V, VGS=0 V,

DS

T

=125 °C

j

V

DS

T

=85 °C

j

2)

=18 V, VGS=0 V,

2)

VGS=16 V, VDS=0 V

VGS=4.5 V, ID=15 A

V

=10 V, ID=30 A

GS

- 10 1000

-560

- 1 100 nA

- 16.1 20.5

mΩ

- 11.2 13.6

Rev. 2.1 page 2 2008-04-18

IPD30N03S4L-14

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

V

=0 V, VDS=25 V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f =1 MHz

V

=15 V, VGS=10 V,

DD

I

=30 A, R

D

=24 V, ID=30 A,

V

DD

V

=0 to 10 V

GS

=3.5 Ω

G

- 750 980 pF

- 190 250

-1020

-3-ns

-2-

-12-

-2-

- 2.2 3 nC

- 1.4 3

-1114

Gate plateau voltage

V

plateau

- 3.4 - V

Reverse Diode

Diode continous forward current

I

S

- - 30 A

2)

TC=25 °C

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an R

see Application Note ANPS071E at www.infineon.com/optimos

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2)

2)

I

S,pulse

V

t

rr

Q

thJC

SD

rr

VGS=0 V, IF=30 A,
T

=25 °C

j

VR=15 V, IF=IS,

di

/dt =100 A/µs

F

= 4.9K/W the chip is able to carry 38A at 25°C. For detailed information

- - 120

0.6 0.95 1.3 V

-12-ns

-10-nC

Rev. 2.1 page 3 2008-04-18

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V ID = f(TC); V

GS

GS

IPD30N03S4L-14

≥ 6 V

40

35

30

30

25

20

[W]

20

tot

P

[A]

D

I

15

10

10

5

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

1 µs

100

10 µs

[A]

D

I

10

100 µs

1 ms

1

0.1 1 10 100

VDS [V]

= f(tp)

thJC

parameter: D =tp/T

1

10

0.5

0

0.1

10

0.05

0.01

-1

[K/W]

10

thJC

Z

10

10

-2

-3

10

single pulse

-6

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

tp [s]

Rev. 2.1 page 4 2008-04-18

IPD30N03S4L-14

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

GS

parameter: V

= f(ID); Tj = 25 °C

DS(on)

GS

[A]

D

I

120

100

80

60

10 V

5 V

4.5 V

4 V

]

Ω

[m

DS(on)

40

35

30

25

3.5 V

4 V

4.5 V

R

40

3.5 V

20

3 V

2.5 V

0

0123456

VDS [V]

20

15

10

0 20406080100

ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

5 V

10 V

I

= f(VGS); V

D

parameter: T

120

100

80

60

[A]

D

I

40

20

0

123456

= 6V R

DS

j

-55 °C

25 °C

175 °C

VGS [V]

= f(Tj); ID = 30 A; V

DS(on)

GS

= 10 V

20

18

16

]

Ω

[m

14

DS(on)

R

12

10

8

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 2.1 page 5 2008-04-18

9 Typ. gate threshold voltage 10 Typ. capacitances

IPD30N03S4L-14

V

GS(th)

= f(Tj); V

parameter: I

2

1.75

1.5

1.25

[V]

1

GS(th)

V

0.75

0.5

0.25

0

-60 -20 20 60 100 140 180

= V

GS

DS

D

100 µA

10 µA

C = f(VDS); V

3

10

2

10

[pF]

C

1

10

0

10

= 0 V; f = 1 MHz

GS

Ciss

Coss

Crss

0 5 10 15 20 25 30

Tj [°C]

VDS [V]

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(V

parameter: T

) I

SD

j

3

10

2

10

[A]

F

I

1

10

25 °C

175 °C

0

10

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

= f(tAV)

A S

parameter: T

100

10

[A]

AV

I

1

0.1

1 10 100 1000

j(start)

100 °C

150 °C

tAV [µs]

25 °C

Rev. 2.1 page 6 2008-04-18

IPD30N03S4L-14

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage

E

= f(Tj) V

AS

parameter: I

D

= f(Tj); ID = 1 mA

BR(DSS)

70

60

50

7.5 A

34

33

32

40

[mJ]

AS

E

30

15 A

[V]

BR(DSS)

V

31

30

20

30 A

10

0

25 75 125 175

29

28

-55 -15 25 65 105 145

Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

Tj [°C]

V

= f(Q

GS

gate

parameter: V

10

9

8

7

6

[V]

5

GS

V

4

3

2

1

0

024681012

); ID = 30 A pulsed

DD

Q

gate

[nC]

6 V

24 V

V

GS

Q

g

V

gs(th)

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

Rev. 2.1 page 7 2008-04-18

IPD30N03S4L-14

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2007

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.

Rev. 2.1 page 8 2008-04-18

Revision History

IPD30N03S4L-14

Version

Revision 2.1

Date

18.04.2008

Changes

Update of type and marking in
table on page one

Rev. 2.1 page 9 2008-04-18