Datasheet ipd22n08s2l-50_green Datasheet

IPD22N08S2L-50

OptiMOS® Power-Transistor

Features

• N-channel Logic Level - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

• Ultra low Rds(on)

• 100% Avalanche tested

Type Package Marking

IPD22N08S2L-50 PG-TO252-3-11 2N08L50

Product Summary

V

DS

R

DS(on),max

I

D

75 V

50

25 A

PG-TO252-3-11

mΩ

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

=25 °C, unless otherwise specified

j

I

D

TC=25 °C, VGS=10 V

T

V

1)

I

D,pulse

E

AS

V

GS

P

tot

T

, T

j

TC=25 °C

ID=22A

TC=25 °C

stg

=100 °C,

C

=10 V

GS

Value

27 A

1)

19

108

94 mJ

±20 V

75 W

-55 ... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Rev. 1.0 page 1 2006-07-18

IPD22N08S2L-50

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction ­ambient, leaded

SMD version, device on PCB

Electrical characteristics, at T

1)

R

thJC

R

thJA

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 75

2

cooling area

6 cm

2)

- - 2 K/W

- - 100

--50

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

V

(BR)DSSVGS

V

GS(th)

=0 V, ID= 1 mA

VDS=VGS, ID=31 µA

75 - - V

1.2 1.6 2.0

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Drain-source on-state resistance

I

I

R

R

DSS

GSS

DS(on)

DS(on)

VDS=75 V, VGS=0 V,
T

=25 °C

j

V

=75 V, VGS=0 V,

DS

T

=125 °C

j

2)

VGS=20 V, VDS=0 V

VGS=5 V, ID=50 A

VGS=10 V, ID=50 A,

- 0.01 1 µA

- 1 100

- 1 100 nA

- 58.0 65

mΩ

- 38.5 50.0 mΩ

Rev. 1.0 page 2 2006-07-18

IPD22N08S2L-50

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

1)

C

iss

V

=0 V, VDS=25 V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

1)

Q

gs

Q

gd

Q

g

GS

f =1 MHz

V

=37 V, VGS=10 V,

DD

I

=22 A, R

D

=60 V, ID=22 A,

V

DD

V

=0 to 10 V

GS

=9.1 Ω

G

- 630 - pF

- 160 -

-75-

-6-ns

-20-

-26-

-10-

- 2 2.7 nC

-912

-2133

Gate plateau voltage

V

plateau

- 3.9 - V

Reverse Diode

1)

Diode continous forward current

Diode pulse current

1)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Defined by design. Not subject to production test.

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

1)

1)

I

S

I

S,pulse

V

SD

t

rr

Q

rr

T

=25 °C

C

VGS=0 V, IF=22 A,
T

=25 °C

j

VR=40 V, IF=IS,

di

/dt =100 A/µs

F

VR=40 V, IF=IS,

di

/dt =100 A/µs

F

connection. PCB is vertical in still air.

- - 25 A

- - 100

- 0.9 1.3 V

-44-ns

-66-nC

Rev. 1.0 page 3 2006-07-18

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V ID = f(TC); V

GS

GS

IPD22N08S2L-50

≥ 10 V

80

30

70

25

60

20

50

[W]

40

tot

P

15

[A]

D

I

30

10

20

5

10

0

0 50 100 150 200

TC [°C]

0

0 50 100 150 200

TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

100

1 µs

10 µs

[A]

D

I

100 µs

1 ms

10

1

0.1 1 10 100

[V]

V

DS

= f(tp)

thJC

parameter: D =tp/T

0.5

0

10

0.1

0.05

-1

[K/W]

10

thJC

Z

10

10

0.01

-2

-3

-6

-7

10

10

single pulse

-5

10

10

-4

tp [s]

10

-3

10

10

10

0

-1

-2

Rev. 1.0 page 4 2006-07-18

IPD22N08S2L-50

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

GS

parameter: V

= (ID); Tj = 25 °C

DS(on)

GS

100

10 V

170

3 V

3.5 V

4 V

150

130

[A]

D

I

5 V

50

4.5 V

110

[mW]

DS(on)

R

90

70

4 V

3.5 V

3 V

0

2.5 V

0246810

VDS [V]

50

30

0 10203040

ID [A]

7 Typ. transfer characteristics 8 Typ. Forward transconductance

4.5 V

5 V

10 V

I

= f(VGS); V

D

parameter: T

80

60

40

[A]

D

I

20

0

12345

= 6V g

DS

j

25 °C

175 °C

-55 °C

VGS [V]

= f(ID); Tj = 25°C

fs

parameter: g

40

30

[S]

20

fs

g

10

0

0 10203040

fs

ID [A]

Rev. 1.0 page 5 2006-07-18

9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage

IPD22N08S2L-50

R

= f(Tj) V

DS(ON)

GS(th)

= f(Tj); V

parameter: ID = 11 A; VGS = 10 V parameter: I

90

80

70

]

Ω

60

[m

DS(on)

50

R

40

30

20

-60 -20 20 60 100 140 180

Tj [°C]

2.5

2

1.5

[V]

GS(th)

V

1

0.5

0

-60 -20 20 60 100 140 180

= V

GS

DS

D

155 µA

31 µA

Tj [°C]

11 Typ. capacitances 12 Typical forward diode characteristicis

C = f(V

); V

= 0 V; f = 1 MHz IF = f(VSD)

GS

10

10

DS

4

3

[pF]

C

2

10

0 5 10 15 20 25 30

VDS [V]

Ciss

Coss

Crss

parameter: T

3

10

2

10

[A]

F

I

1

10

0

10

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

j

25 °C

175 °C

VSD [V]

Rev. 1.0 page 6 2006-07-18

13 Typical avalanche energy 14 Typ. gate charge

E

= f(Tj) V

AS

parameter: I

D

GS

= f(Q

); ID = 22 A pulsed

gate

IPD22N08S2L-50

400

5.5 A

12

350

10

300

8

250

200

[mJ]

AS

E

11 A

[V]

GS

V

6

150

4

100

22 A

2

50

0

25 75 125 175

Tj [°C]

0

0102030

Q

15 Typ. drain-source breakdown voltage 16 Gate charge waveforms

gate

[nC]

15 V

60 V

V

BR(DSS)

= f(Tj); ID = 1 mA

90

85

80

[V]

BR(DSS)

V

75

70

65

-60 -20 20 60 100 140 180

Tj [°C]

V

V

GS

GS

Q

Q

g

g

Q

Q

gate

gate

Q

Q

Q

gs

gs

Q

gd

gd

Rev. 1.0 page 7 2006-07-18

IPD22N08S2L-50

©

Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg

Infineon Technologies AG 1999

All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)

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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.

Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2006-07-18