Datasheet ipd100n06s4-03_ds_10 Datasheet

IPD100N06S4-03

OptiMOS®-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Ultra Low R

• Ultra High I

DSon

D

Product Summary

V

DS

R

DS(on),max

I

D

60 V

3.5

100 A

PG-TO252-3-11

mΩ

Type Package Marking

IPD100N06S4-03 PG-TO252-3-11 4N0603

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

1)

2)

2)

Avalanche current, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

I

D

I

D,pulse

E

AS

I

AS

V

GS

P

tot

T

, T

j

TC=25°C, VGS=10V

2)

T

=100°C, VGS=10V

C

100

TC=25°C

ID=50A

-

- ±20 V

TC=25°C

- -55 ... +175 °C

stg

Value

100 A

400

300 mJ

100 A

150 W

IEC climatic category; DIN IEC 68-1 - - 55/175/56

−

Rev. 1.0 page 1 2010-02-11

IPD100N06S4-03

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

Electrical characteristics, at T

2)

R

thJC

R

thJA

=25 °C, unless otherwise specified

j

- - - 1.0 K/W

minimal footprint - - 62

6 cm

2

cooling area

3)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

V

(BR)DSSVGS

V

GS(th)

I

DSS

=0V, ID= 1mA

VDS=VGS, ID=90µA

VDS=60V, VGS=0V,
T

=25°C

j

60 - - V

2.0 3.0 4.0

- 0.03 1 µA

Gate-source leakage current

Drain-source on-state resistance

I

R

GSS

DS(on)

V

=60V, VGS=0V,

DS

T

=125°C

j

2)

VGS=20V, VDS=0V

VGS=10V, ID=100A

- 10 100

- - 100 nA

- 2.8 3.5

mΩ

Rev. 1.0 page 2 2010-02-11

IPD100N06S4-03

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

2)

C

iss

V

=0V, VDS=25V,

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

f =1MHz

V

=30V, VGS=10V,

DD

I

=100A, R

D

=48V, ID=100A,

V

DD

V

=0 to 10V

GS

=3.5Ω

G

- 7980 10400 pF

- 1960 2540

- 75 150

-30-ns

-70-

-40-

-5-

-4457nC

-1020

- 99 128

Gate plateau voltage

V

plateau

- 5.6 - V

Reverse Diode

2)

Diode continous forward current

Diode pulse current

2)

Diode forward voltage

Reverse recovery time

Reverse recovery charge

1)

Current is limited by bondwire; with an R

2)

Specified by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

2)

2)

I

S

I

S,pulse

V

SD

t

rr

Q

rr

= 1.0K/W the chip is able to carry 154A at 25°C.

thJC

=25°C

T

C

VGS=0V, IF=100A,
T

=25°C

j

VR=30V, IF=50A,

di

/dt =100A/µs

F

connection. PCB is vertical in still air.

- - 100 A

- - 400

0.6 0.95 1.3 V

- 125 - ns

- 110 - nC

Rev. 1.0 page 3 2010-02-11

1 Power dissipation 2 Drain current

P

= f(TC); V

tot

≥ 6 V ID = f(TC); V

GS

GS

IPD100N06S4-03

≥ 6 V

160

120

140

100

120

80

100

[W]

80

tot

P

[A]

D

I

60

60

40

40

20

0

0 50 100 150 200

TC [°C]

20

0

0 50 100 150 200

T

[°C]

C

3 Safe operating area 4 Max. transient thermal impedance

I

= f(VDS); TC = 25 °C; D = 0 Z

D

parameter: t

p

1000

1 µs

10 µs

100

100 µs

[A]

D

I

10

1 ms

1

0.1 1 10 100

VDS [V]

= f(tp)

thJC

parameter: D =tp/T

1

10

0

10

0.5

0.1

-1

[K/W]

10

-2

-3

10

0.05

0.01

single pulse

-6

10

-5

thJC

Z

10

10

10

10

-1

10

-3

10

-4

-2

10

0

tp [s]

Rev. 1.0 page 4 2010-02-11

IPD100N06S4-03

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

I

= f(VDS); Tj = 25 °C R

D

parameter: V

GS

parameter: V

= f(ID); Tj = 25 °C

DS(on)

GS

360

10 V

8 V

7 V

320

280

240

6.5 V

200

[A]

D

I

160

6 V

120

5.5 V

80

40

0

01234

VDS [V]

10

5 V

6 V

9

8

7

]

Ω

6

[m

5

DS(on)

R

4

3

2

1

0 100 200 300 400

ID [A]

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

7 V

8 V

10 V

I

= f(VGS); V

D

parameter: T

350

300

250

200

[A]

D

I

150

100

50

0

34567

= 6V R

DS

j

175 °C

25 °C

-55 °C

VGS [V]

= f(Tj); ID = 100 A; V

DS(on)

GS

= 10 V

6

5.5

5

4.5

]

4

Ω

[m

3.5

DS(on)

3

R

2.5

2

1.5

1

-60 -20 20 60 100 140 180

Tj [°C]

Rev. 1.0 page 5 2010-02-11

9 Typ. gate threshold voltage 10 Typ. capacitances

IPD100N06S4-03

V

GS(th)

= f(Tj); V

parameter: I

4

3.5

3

[V]

GS(th)

V

2.5

2

1.5

-60 -20 20 60 100 140 180

= V

GS

DS

D

900 µA

C = f(VDS); V

4

10

3

10

= 0 V; f = 1 MHz

GS

Ciss

Coss

C [pF]

90 µA

2

10

Crss

1

10

0 5 10 15 20 25 30

Tj [°C]

VDS [V]

11 Typical forward diode characteristicis 12 Avalanche characteristics

IF = f(V

parameter: T

) I

SD

j

3

3

10

10

2

2

10

10

[A]

[A]

F

F

I

I

25 °C

25 °C

175 °C

1

1

10

10

0

0

10

10

0 0.2 0.4 0.6 0.8 1 1.2 1.4

0 0.2 0.4 0.6 0.8 1 1.2 1.4

175 °C

VSD [V]

VSD [V]

= f(tAV)

A S

parameter: T

1000

100

[A]

AV

I

10

1

0.1 1 10 100 1000

j(start)

150 °C

tAV [µs]

25 °C

100 °C

Rev. 1.0 page 6 2010-02-11

IPD100N06S4-03

13 Avalanche energy 14 Drain-source breakdown voltage

E

= f(Tj); ID = 50 A V

AS

= f(Tj); ID = 1 mA

BR(DSS)

350

300

250

200

66

64

62

[V]

[mJ]

AS

E

150

100

50

0

25 75 125 175

BR(DSS)

V

60

58

56

-55 -15 25 65 105 145

Tj [°C]

15 Typ. gate charge 16 Gate charge waveforms

Tj [°C]

V

= f(Q

GS

gate

parameter: V

10

9

8

7

6

[V]

5

GS

V

4

3

2

1

0

0 20406080100

); ID = 100 A pulsed

DD

Q

[nC]

gate

12 V

48 V

V

GS

Q

g

V

gs(th)

Q

g(th)

Q

gs

Q

sw

Q

gd

Q

gate

Rev. 1.0 page 7 2010-02-11

IPD100N06S4-03

r

Published by
Infineon Technologies AG
81726 Munich, Germany

© Infineon Technologies AG 2010

All Rights Reserved.

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 1.0 page 8 2010-02-11

Revision History

IPD100N06S4-03

Version

Rev. 1.0

Date

11.02.2010

Changes

Data Sheet 1.0

Rev. 1.0 page 9 2010-02-11