Datasheet IPD06N03L Datasheet (Infineon)



)

j

g

=

OptiMOS

=Buck converter series

==

Feature



N-Channel



Logic Level



Low on-resistance R



Excellent Gate Charge x R



Superior thermal resistance



175°C operating temperature



dv/dt rated



Ideal for fast switching buck converters

DS(on

product (FOM)

Preliminary data

IPD06N03L

Product Summary

V

DS

R

DS(on

I

D

P-TO252

30 V

5.9 m

50 A



Type Package Ordering Code

IPD06N03L P-TO252 Q67042-S4109

Marking

06N03L

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TC=25°C1)

T

=100°C

C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=20A, VDD=25V, RGS=25



Reverse diode dv/dt

IS=50A, VDS=24V, di/dt=200A/µs, T

jmax

=175°C

I

E

dv/dt 6 kV/µs

Gate source voltage V

Power dissipation

TC=25°C

P

D

D puls

AS

GS

tot

50

200

30 mJ

±20

125 W

A

V

Operating and storage temperature T

T

,

st

-55... +175

°C

IEC climatic category; DIN IEC 68-1 55/175/56

Page 1

2001-10-18

Preliminary data

IPD06N03L

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

2)

R

thJC

thJA

- - 1.2 K/W

- - 100

-

75

50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

I

= 80 µA

D

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

30 - - V

1.2 1.6 2

-

0.01

1

µA

V

=30V, VGS=0V, Tj=125°C

DS

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=30A

Drain-source on-state resistance

VGS=10V, ID=30A

1

Current limited by bondwire and calculated with max. source pin temperature of 85°C;

with a R

2

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

= 1.2K/W the chip is able to carry ID= 91A.

thJC

Page 2

I

GSS

R

DS(on)

R

DS(on)

-

10

100

- 1 100 nA

- 6.8 8.7

- 4.7 5.9

2001-10-18

m



Preliminary data

(p

)

IPD06N03L

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate Charge Characteristics

Gate to source charge Q

Gate to drain charge Q

Gate charge total Q

fs

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

g

VDS

2*ID*R

DS(on)max

I

=30A

D

VGS=0V, VDS=25V,

f=1MHz

,

29 58 - S

- 1900 2370 pF

- 750 940

- 170 250

VDD=15V, VGS=10V,

I

=25A, RG=3.6

D



- 7.3 11 ns

- 22 33

- 34 50

- 20.5 30.7

VDD=15V, ID=25A - 6.3 8.4 nC

- 12.3 16.4

VDD=15V, ID=25A,

V

=0 to 5V

GS

- 25.8 34.3

Output charge Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current

Inverse diode direct current,

I

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

oss

S

SM

SD

rr

lateau

VDS=15V, ID=25A,

V

=0V

GS

VDD=15V, ID=25A - 3.1 - V

TC=25°C - - 50 A

- 25.5 31.9

- - 200

VGS=0V, IF=50A - 0.9 1.3 V

VR=15V, I

di

/dt=100A/µs

F

lS,

=

F

- 43 54 ns

- 50 63 nC

Page 3

2001-10-18

Preliminary data

IPD06N03L

1 Power dissipation

P

= f (TC)

tot

IPD06N03L

140

W

120

110

100

tot

90

P

80

70

60

50

40

30

20

10

0

0 20 40 60 80 100 120 140 160°C190

2 Drain current

ID = f (TC)

parameter: VGS

IPD06N03L

55

A

45

40

35

D

I

30

25

20

15

10

5

0

0 20 40 60 80 100 120 140 160°C190

T

C

10 V

T

C

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TC = 25 °C

3

IPD06N03L

10

A

2

10

D

I

1

10

0

10

-1

10

D

R

D

I

/

S

D

V

=

)

n

o

(

S

0

10

DC

1

tp = 6.9µs

10 µs

100 µs

1 ms

10 ms

V

DS

10

4 Transient thermal impedance

Z

= f (tp)

thJC

parameter : D = tp/T

1

IPD06N03L

10

K/W

0

10

thJC

-1

Z

10

-2

10

single pulse

-3

10

-4

2

10

-7

-6

10

-5

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-4

-3

10

-2

s

t

0

10

p

Page 4

2001-10-18

Preliminary data

IPD06N03L

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 80 µs

IPD06N03L

120

P

= 125W

tot

A

i

h

100

90

80

D

I

70

60

50

40

30

20

10

0

0 0.5 1 1.5 2 2.5 3 3.5 4

VGS [V]

g

f

e

d

c

b

a

a 2.6

b 2.8

c 3.0

d 3.2

e 3.4

f 3.6

g 3.8

h 4.5

i 10.0

V

DS

6 Typ. drain-source on resistance

R

DS(on)

parameter: V

R

5

= f (ID)

GS

IPD06N03L

19

d

[V] =

e

3.4

3.6

d

f



16

14

DS(on)

12

10

8

6

4

V

GS

2

3.2

0

0 10 20 30 40 50 60 70

3.8

e

g

h

i

4.5

10.0

f

g

h

i

85

A

I

D

7 Typ. transfer characteristics

ID= f ( VGS ); VDS

2 x ID x R

DS(on)max

parameter: tp = 80 µs

60

A

50

45

40

D

I

35

30

25

20

15

10

5

0

0 0.5 1 1.5 2 2.5 3

V

GS

8 Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter: g

90

S

70

60

fs

g

50

40

30

20

10

4

0

0 20 40 60 80 100

fs

130

A

I

D

Page 5

2001-10-18

Preliminary data

IPD06N03L

9 Drain-source on-state resistance

R

DS(on)

= f (Tj)

parameter : ID = 30 A, VGS = 10 V

IPD06N03L

14



12

11

10

DS(on)

9

R

8

7

6

5

4

3

2

1

0

-60 -20 20 60 100 140

98%

typ

°C

10 Gate threshold voltage

V

GS(th)

= f (Tj)

parameter: VGS = VDS, ID = 80 µA

2.5

V

GS(th)

V

1.5

1

0.5

200

T

j

0

-60 -20 20 60 100

max.

typ.

min.

°C

T

180

j

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

4

10

pF

i

ss

C

3

10

2

10

0 5 10 15 20

C

oss

C

rss

V

DS

30

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj , tp = 80 µs

3

IPD06N03L

10

A

2

10

F

I

1

10

Tj = 25 °C typ

Tj = 175 °C typ

Tj = 25 °C (98%)

Tj = 175 °C (98%)

0

10

0 0.4 0.8 1.2 1.6 2 2.4

V

SD

3

Page 6

2001-10-18

Preliminary data

IPD06N03L

13 Typ. avalanche energy

EAS = f (Tj)

par.: ID = 20 A, VDD = 25 V, RGS = 25

260

mJ

220

200

180

AS

160

E

140

120

100

80

60

40

20

0

25 45 65 85 105 125 145

°C

T



j

185

14 Typ. gate charge

V

GS

= f (Q

Gate

)

parameter: ID = 25 A pulsed

IPD06N03L

16

V

12

GS

10

V

0.2 V

DS max

8

0.5 V

DS max

0.8 V

6

DS max

4

2

0

0 10 20 30 40 50 60

nC

Q

75

Gate

15 Drain-source breakdown voltage

V

(BR)DSS

= f (Tj)

parameter: ID=10 mA

IPD06N03L

36

V

34

33

(BR)DSS

V

32

31

30

29

28

27

-60 -20 20 60 100 140

°C

200

T

j

Page 7

2001-10-18

Preliminary data

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

IPD06N03L

Page 8

2001-10-18